Reduction of the interfacial Si displacement of ultrathin SiO2 film on Si(100) formed by highly-concentrated ozone

A. Kurokawa, Shingo Ichimura, K. Nakamura

Research output: Contribution to journalArticle

Abstract

To investigate the interfacial Si-displacement of an ultrathin silicon dioxide formed by oxidation of a Si(100) substrate with atmospheric-pressure ozone at a substrate temperature of 375 °C, we examined the structure around the interface of SiO2 and Si using medium-energy ion scattering spectroscopy (MEIS). A thermally grown oxide with the same thickness as an ozone-formed oxide was also measured with MEIS for comparison. The ozone-formed oxide film exhibited considerably less Si-displacement in the oxide layers near the interface than a thermally grown oxide film, which indicates that an ozone oxide film is homogenous. These results explain well our previous findings that an ozone oxide film exhibits a constant HF etching rate while a thermally grown oxide film slows the etching rate near the interface.

Original languageEnglish
Pages (from-to)19-25
Number of pages7
JournalDenshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory
Volume63
Issue number12
Publication statusPublished - 1999 Dec 1
Externally publishedYes

Fingerprint

Ultrathin films
Ozone
ozone
Oxide films
oxide films
ion scattering
Oxides
oxides
Etching
etching
Spectroscopy
Scattering
Ions
Substrates
spectroscopy
Atmospheric pressure
atmospheric pressure
Silica
silicon dioxide
Oxidation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

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N2 - To investigate the interfacial Si-displacement of an ultrathin silicon dioxide formed by oxidation of a Si(100) substrate with atmospheric-pressure ozone at a substrate temperature of 375 °C, we examined the structure around the interface of SiO2 and Si using medium-energy ion scattering spectroscopy (MEIS). A thermally grown oxide with the same thickness as an ozone-formed oxide was also measured with MEIS for comparison. The ozone-formed oxide film exhibited considerably less Si-displacement in the oxide layers near the interface than a thermally grown oxide film, which indicates that an ozone oxide film is homogenous. These results explain well our previous findings that an ozone oxide film exhibits a constant HF etching rate while a thermally grown oxide film slows the etching rate near the interface.

AB - To investigate the interfacial Si-displacement of an ultrathin silicon dioxide formed by oxidation of a Si(100) substrate with atmospheric-pressure ozone at a substrate temperature of 375 °C, we examined the structure around the interface of SiO2 and Si using medium-energy ion scattering spectroscopy (MEIS). A thermally grown oxide with the same thickness as an ozone-formed oxide was also measured with MEIS for comparison. The ozone-formed oxide film exhibited considerably less Si-displacement in the oxide layers near the interface than a thermally grown oxide film, which indicates that an ozone oxide film is homogenous. These results explain well our previous findings that an ozone oxide film exhibits a constant HF etching rate while a thermally grown oxide film slows the etching rate near the interface.

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