Reduction of threading dislocations in crack-free AlGaN by using multiple thin SixAl1-xN interlayers

T. Akasaka, T. Nishida, Y. Taniyasu, M. Kasu, T. Makimoto, N. Kobayashi

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Crack-free AlGaN thin films about 1 μm thick were grown directly on a SiC substrate by metalorganic vapor phase epitaxy (MOVPE), and their threading dislocation density was reduced by one order of magnitude using the multiple SixAl1-xN interlayers. These interlayers were formed in situ without complicated temperature changes in the MOVPE process. It was observed by cross-sectional transmission electron microscope (X-TEM) that some TDs in AlGaN were terminated or looped near the interlayers.

Original languageEnglish
Pages (from-to)4140-4142
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number20
DOIs
Publication statusPublished - 2003 Nov 17
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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