Reduction of threading dislocations in crack-free AlGaN by using multiple thin SixAl1-xN interlayers

T. Akasaka, T. Nishida, Y. Taniyasu, M. Kasu, Toshiki Makimoto, N. Kobayashi

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Crack-free AlGaN thin films about 1 μm thick were grown directly on a SiC substrate by metalorganic vapor phase epitaxy (MOVPE), and their threading dislocation density was reduced by one order of magnitude using the multiple SixAl1-xN interlayers. These interlayers were formed in situ without complicated temperature changes in the MOVPE process. It was observed by cross-sectional transmission electron microscope (X-TEM) that some TDs in AlGaN were terminated or looped near the interlayers.

Original languageEnglish
Pages (from-to)4140-4142
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number20
DOIs
Publication statusPublished - 2003 Nov 17
Externally publishedYes

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interlayers
cracks
vapor phase epitaxy
electron microscopes
transmission electron microscopy
thin films
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Reduction of threading dislocations in crack-free AlGaN by using multiple thin SixAl1-xN interlayers. / Akasaka, T.; Nishida, T.; Taniyasu, Y.; Kasu, M.; Makimoto, Toshiki; Kobayashi, N.

In: Applied Physics Letters, Vol. 83, No. 20, 17.11.2003, p. 4140-4142.

Research output: Contribution to journalArticle

Akasaka, T. ; Nishida, T. ; Taniyasu, Y. ; Kasu, M. ; Makimoto, Toshiki ; Kobayashi, N. / Reduction of threading dislocations in crack-free AlGaN by using multiple thin SixAl1-xN interlayers. In: Applied Physics Letters. 2003 ; Vol. 83, No. 20. pp. 4140-4142.
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