Reduction of threshold voltage fluctuation in field-effect transistors by controlling individual dopant position

Masahiro Hori, Keigo Taira, Akira Komatsubara, Kuninori Kumagai, Yukinori Ono, Takashi Tanii, Tetsuo Endoh, Takahiro Shinada

    Research output: Contribution to journalArticle

    6 Citations (Scopus)

    Abstract

    To investigate the impact of only the dopant position on threshold voltage (V th) in nanoscale field-effect transistors, we fabricated transistors with ordered dopant arrays and conventional random channel doping. Electrical measurements revealed that device performance could be enhanced by controlling the dopant position alone, despite varying dopant number according to a Poisson distribution. Furthermore, device-to-device fluctuations in V th could be suppressed by implanting a heavier ion such as arsenic owing to the reduction of the projected ion struggling. The results of our study highlight potential improvements in device performance by controlling individual dopant positions.

    Original languageEnglish
    Article number013503
    JournalApplied Physics Letters
    Volume101
    Issue number1
    DOIs
    Publication statusPublished - 2012 Jul 2

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    threshold voltage
    field effect transistors
    arsenic
    electrical measurement
    heavy ions
    transistors
    ions

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Reduction of threshold voltage fluctuation in field-effect transistors by controlling individual dopant position. / Hori, Masahiro; Taira, Keigo; Komatsubara, Akira; Kumagai, Kuninori; Ono, Yukinori; Tanii, Takashi; Endoh, Tetsuo; Shinada, Takahiro.

    In: Applied Physics Letters, Vol. 101, No. 1, 013503, 02.07.2012.

    Research output: Contribution to journalArticle

    Hori, Masahiro ; Taira, Keigo ; Komatsubara, Akira ; Kumagai, Kuninori ; Ono, Yukinori ; Tanii, Takashi ; Endoh, Tetsuo ; Shinada, Takahiro. / Reduction of threshold voltage fluctuation in field-effect transistors by controlling individual dopant position. In: Applied Physics Letters. 2012 ; Vol. 101, No. 1.
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