Regional band-gap tailoring of 1550nm-band InAs quantum dot Intermixing by controlling ion implantation depth

S. Isawa, Y. Akashi, A. Matsumoto, K. Akahane, Y. Matsushima, H. Ishikawa, K. Utaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the regional control of the band-gap originated from the highly-stacked quantum dots (QD) on the InP (311)B substrate changing ion implantation depths using quantum dot intermixing (QDI) technique the QDI process involved B+ implantation and rapid thermal annealing (RTA) at 600 °C, in which the ion implantation depths were controlled regionally with a combination of SiO2 and resist (AZ) films. Controlled blue shift of the photoluminescence (PL) spectra verified the effectiveness of the controlled QDI process for the application to semiconductor photonic integrated circuits using 1550nm-band QDs.

Original languageEnglish
Title of host publication2019 Compound Semiconductor Week, CSW 2019 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728100807
DOIs
Publication statusPublished - 2019 May
Event2019 Compound Semiconductor Week, CSW 2019 - Nara, Japan
Duration: 2019 May 192019 May 23

Publication series

Name2019 Compound Semiconductor Week, CSW 2019 - Proceedings

Conference

Conference2019 Compound Semiconductor Week, CSW 2019
CountryJapan
CityNara
Period19/5/1919/5/23

Fingerprint

Ion implantation
Semiconductor quantum dots
ion implantation
Energy gap
quantum dots
Rapid thermal annealing
blue shift
Photonics
integrated circuits
Integrated circuits
implantation
Photoluminescence
photonics
Semiconductor materials
photoluminescence
annealing
indium arsenide
Substrates

Keywords

  • intermixng
  • ion implantation
  • qauntum dot
  • rapid thermal annealing

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Atomic and Molecular Physics, and Optics

Cite this

Isawa, S., Akashi, Y., Matsumoto, A., Akahane, K., Matsushima, Y., Ishikawa, H., & Utaka, K. (2019). Regional band-gap tailoring of 1550nm-band InAs quantum dot Intermixing by controlling ion implantation depth. In 2019 Compound Semiconductor Week, CSW 2019 - Proceedings [8819190] (2019 Compound Semiconductor Week, CSW 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2019.8819190

Regional band-gap tailoring of 1550nm-band InAs quantum dot Intermixing by controlling ion implantation depth. / Isawa, S.; Akashi, Y.; Matsumoto, A.; Akahane, K.; Matsushima, Y.; Ishikawa, H.; Utaka, K.

2019 Compound Semiconductor Week, CSW 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8819190 (2019 Compound Semiconductor Week, CSW 2019 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Isawa, S, Akashi, Y, Matsumoto, A, Akahane, K, Matsushima, Y, Ishikawa, H & Utaka, K 2019, Regional band-gap tailoring of 1550nm-band InAs quantum dot Intermixing by controlling ion implantation depth. in 2019 Compound Semiconductor Week, CSW 2019 - Proceedings., 8819190, 2019 Compound Semiconductor Week, CSW 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2019 Compound Semiconductor Week, CSW 2019, Nara, Japan, 19/5/19. https://doi.org/10.1109/ICIPRM.2019.8819190
Isawa S, Akashi Y, Matsumoto A, Akahane K, Matsushima Y, Ishikawa H et al. Regional band-gap tailoring of 1550nm-band InAs quantum dot Intermixing by controlling ion implantation depth. In 2019 Compound Semiconductor Week, CSW 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8819190. (2019 Compound Semiconductor Week, CSW 2019 - Proceedings). https://doi.org/10.1109/ICIPRM.2019.8819190
Isawa, S. ; Akashi, Y. ; Matsumoto, A. ; Akahane, K. ; Matsushima, Y. ; Ishikawa, H. ; Utaka, K. / Regional band-gap tailoring of 1550nm-band InAs quantum dot Intermixing by controlling ion implantation depth. 2019 Compound Semiconductor Week, CSW 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. (2019 Compound Semiconductor Week, CSW 2019 - Proceedings).
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