Regional Bandgap Tailoring of 1550 nm-Band InAs Quantum Dot Intermixing by Controlling Ion Implantation Depth

Shohei Isawa; Yota Akashi; Ryosuke Morita; Runa Kaneko; Hirokazu Okada; Atsushi Matsumoto; Koichi Akahane; Yuichi Matsushima; Hiroshi Ishikawa; Katsuyuki Utaka

doi:10.1002/pssa.201900521

Regional Bandgap Tailoring of 1550 nm-Band InAs Quantum Dot Intermixing by Controlling Ion Implantation Depth

Shohei Isawa^*, Yota Akashi, Ryosuke Morita, Runa Kaneko, Hirokazu Okada, Atsushi Matsumoto, Koichi Akahane, Yuichi Matsushima, Hiroshi Ishikawa, Katsuyuki Utaka

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The regional control of the bandgap energies using the highly stacked quantum dot (QD) on InP(311)B substrate changing ion implantation depths in the process of the quantum dot intermixing (QDI) technique is investigated. The QDI process involves B⁺ implantation and rapid thermal annealing (RTA) around 600 °C, in which the ion implantation depths are controlled regionally with a combination of SiO₂ and polymer (AZ) films. Controlled blue shifts of the photoluminescence (PL) spectra verify the effectiveness of the regionally controlled QDI process for application to semiconductor photonic integrated circuits using 1550 nm-band QD such as integrated wavelength division multiplexing (WDM) light sources.

Original language	English
Article number	1900521
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	217
Issue number	3
DOIs	https://doi.org/10.1002/pssa.201900521
Publication status	Published - 2020 Feb 1

Keywords

intermixing
ion implantations
quantum dots
rapid thermal annealing

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1002/pssa.201900521

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title = "Regional Bandgap Tailoring of 1550 nm-Band InAs Quantum Dot Intermixing by Controlling Ion Implantation Depth",

abstract = "The regional control of the bandgap energies using the highly stacked quantum dot (QD) on InP(311)B substrate changing ion implantation depths in the process of the quantum dot intermixing (QDI) technique is investigated. The QDI process involves B+ implantation and rapid thermal annealing (RTA) around 600 °C, in which the ion implantation depths are controlled regionally with a combination of SiO2 and polymer (AZ) films. Controlled blue shifts of the photoluminescence (PL) spectra verify the effectiveness of the regionally controlled QDI process for application to semiconductor photonic integrated circuits using 1550 nm-band QD such as integrated wavelength division multiplexing (WDM) light sources.",

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author = "Shohei Isawa and Yota Akashi and Ryosuke Morita and Runa Kaneko and Hirokazu Okada and Atsushi Matsumoto and Koichi Akahane and Yuichi Matsushima and Hiroshi Ishikawa and Katsuyuki Utaka",

note = "Funding Information: This article is based on results obtained from a project commissioned by the New Energy and Industrial Technology Development Organization (NEDO). Publisher Copyright: {\textcopyright} 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

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doi = "10.1002/pssa.201900521",

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AU - Isawa, Shohei

AU - Akashi, Yota

AU - Morita, Ryosuke

AU - Kaneko, Runa

AU - Okada, Hirokazu

AU - Matsumoto, Atsushi

AU - Akahane, Koichi

AU - Matsushima, Yuichi

AU - Ishikawa, Hiroshi

AU - Utaka, Katsuyuki

N1 - Funding Information: This article is based on results obtained from a project commissioned by the New Energy and Industrial Technology Development Organization (NEDO). Publisher Copyright: © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

PY - 2020/2/1

Y1 - 2020/2/1

N2 - The regional control of the bandgap energies using the highly stacked quantum dot (QD) on InP(311)B substrate changing ion implantation depths in the process of the quantum dot intermixing (QDI) technique is investigated. The QDI process involves B+ implantation and rapid thermal annealing (RTA) around 600 °C, in which the ion implantation depths are controlled regionally with a combination of SiO2 and polymer (AZ) films. Controlled blue shifts of the photoluminescence (PL) spectra verify the effectiveness of the regionally controlled QDI process for application to semiconductor photonic integrated circuits using 1550 nm-band QD such as integrated wavelength division multiplexing (WDM) light sources.

AB - The regional control of the bandgap energies using the highly stacked quantum dot (QD) on InP(311)B substrate changing ion implantation depths in the process of the quantum dot intermixing (QDI) technique is investigated. The QDI process involves B+ implantation and rapid thermal annealing (RTA) around 600 °C, in which the ion implantation depths are controlled regionally with a combination of SiO2 and polymer (AZ) films. Controlled blue shifts of the photoluminescence (PL) spectra verify the effectiveness of the regionally controlled QDI process for application to semiconductor photonic integrated circuits using 1550 nm-band QD such as integrated wavelength division multiplexing (WDM) light sources.

KW - intermixing

KW - ion implantations

KW - quantum dots

KW - rapid thermal annealing

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Regional Bandgap Tailoring of 1550 nm-Band InAs Quantum Dot Intermixing by Controlling Ion Implantation Depth

Abstract

Keywords

ASJC Scopus subject areas

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