Relation between the 1.9 eV luminescence and 4.8 eV absorption bands in high-purity silica glass

Ryoichi Tohmon, Yasushi Shimogaichi, Shuji Munekuni, Yoshimichi Ohki, Yoshimasa Hama, Kaya Nagasawa

    Research output: Contribution to journalArticle

    70 Citations (Scopus)

    Abstract

    Photoluminescence measurements of the 1.9 eV emission were carried out on high-purity silica glasses subjected to γ-ray irradiation. The time decay of the luminescence, when excited by the 4.8 eV band, indicates that the 4.8 eV absorption and the 1.9 eV luminescence are caused by two different defects, and that an energy transfer occurs between the two defects. Comparison with electron spin resonance observations shows that both the nonbridging oxygen hole center (responsible for the 1.9 eV luminescence) and another undetermined defect (responsible for the 4.8 eV absorption) must be present in the glass before the 1.9 eV luminescence band can be excited by 4.8 eV photons.

    Original languageEnglish
    Pages (from-to)1650-1652
    Number of pages3
    JournalApplied Physics Letters
    Volume54
    Issue number17
    DOIs
    Publication statusPublished - 1989

    Fingerprint

    silica glass
    purity
    luminescence
    absorption spectra
    defects
    rays
    electron paramagnetic resonance
    energy transfer
    photoluminescence
    irradiation
    glass
    photons
    decay
    oxygen

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Relation between the 1.9 eV luminescence and 4.8 eV absorption bands in high-purity silica glass. / Tohmon, Ryoichi; Shimogaichi, Yasushi; Munekuni, Shuji; Ohki, Yoshimichi; Hama, Yoshimasa; Nagasawa, Kaya.

    In: Applied Physics Letters, Vol. 54, No. 17, 1989, p. 1650-1652.

    Research output: Contribution to journalArticle

    Tohmon, Ryoichi ; Shimogaichi, Yasushi ; Munekuni, Shuji ; Ohki, Yoshimichi ; Hama, Yoshimasa ; Nagasawa, Kaya. / Relation between the 1.9 eV luminescence and 4.8 eV absorption bands in high-purity silica glass. In: Applied Physics Letters. 1989 ; Vol. 54, No. 17. pp. 1650-1652.
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    abstract = "Photoluminescence measurements of the 1.9 eV emission were carried out on high-purity silica glasses subjected to γ-ray irradiation. The time decay of the luminescence, when excited by the 4.8 eV band, indicates that the 4.8 eV absorption and the 1.9 eV luminescence are caused by two different defects, and that an energy transfer occurs between the two defects. Comparison with electron spin resonance observations shows that both the nonbridging oxygen hole center (responsible for the 1.9 eV luminescence) and another undetermined defect (responsible for the 4.8 eV absorption) must be present in the glass before the 1.9 eV luminescence band can be excited by 4.8 eV photons.",
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    AU - Ohki, Yoshimichi

    AU - Hama, Yoshimasa

    AU - Nagasawa, Kaya

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