Relationship between film structure and electric performance of organic field-effect transistors based on perylene tetracarboxylic diimide derivatives

Yoshinobu Hosoi, Yukio Furukawa

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    We have fabricated organic field-effect transistors (OFETs) based on three derivatives of perylene tetracarboxylic diimide (PTCDI). The electron mobility more than 810-2cm2V-1s-1 has been obtained in both vacuum and air for N,N'-bis(4-fluorobenzyl)perylene-3,4,9,10-tetracarboxylic diimide. The study of the film structures suggests that the flat-layer structures near the SiO2 surfaces induce the high electron mobilities.

    Original languageEnglish
    Pages (from-to)189-194
    Number of pages6
    JournalMolecular Crystals and Liquid Crystals
    Volume471
    Issue number1
    DOIs
    Publication statusPublished - 2007 Jan

    Fingerprint

    Perylene
    Organic field effect transistors
    Electron mobility
    electron mobility
    field effect transistors
    flat layers
    Derivatives
    Vacuum
    vacuum
    air
    Air

    Keywords

    • Atomic force microscopy
    • Infrared spectroscopy
    • Organic field-effect transistor
    • Perylene tetracarboxylic diimide

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

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    abstract = "We have fabricated organic field-effect transistors (OFETs) based on three derivatives of perylene tetracarboxylic diimide (PTCDI). The electron mobility more than 810-2cm2V-1s-1 has been obtained in both vacuum and air for N,N'-bis(4-fluorobenzyl)perylene-3,4,9,10-tetracarboxylic diimide. The study of the film structures suggests that the flat-layer structures near the SiO2 surfaces induce the high electron mobilities.",
    keywords = "Atomic force microscopy, Infrared spectroscopy, Organic field-effect transistor, Perylene tetracarboxylic diimide",
    author = "Yoshinobu Hosoi and Yukio Furukawa",
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    N2 - We have fabricated organic field-effect transistors (OFETs) based on three derivatives of perylene tetracarboxylic diimide (PTCDI). The electron mobility more than 810-2cm2V-1s-1 has been obtained in both vacuum and air for N,N'-bis(4-fluorobenzyl)perylene-3,4,9,10-tetracarboxylic diimide. The study of the film structures suggests that the flat-layer structures near the SiO2 surfaces induce the high electron mobilities.

    AB - We have fabricated organic field-effect transistors (OFETs) based on three derivatives of perylene tetracarboxylic diimide (PTCDI). The electron mobility more than 810-2cm2V-1s-1 has been obtained in both vacuum and air for N,N'-bis(4-fluorobenzyl)perylene-3,4,9,10-tetracarboxylic diimide. The study of the film structures suggests that the flat-layer structures near the SiO2 surfaces induce the high electron mobilities.

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    KW - Infrared spectroscopy

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    KW - Perylene tetracarboxylic diimide

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