Reliability of 2DEG Diamond FET by Harsh-Continuous Stress Voltage Approach

N. M. Nashaain, S. Falina, Y. Kitabayashi, D. Matsumura, A. A. Manaf, Z. Hassan, M. Syamsul, H. Kawarada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, a simple and time effective reliability stress measurement is done by continuous breakdown cycle method and continuous cycles of stress method under varying voltages. We apply this approach on transparent polycrystalline diamond FET for two different thickness of Al2O3 namely 400nm and 600nm as counter destructive passivation layer

Original languageEnglish
Title of host publication4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728125381
DOIs
Publication statusPublished - 2020 Apr
Event4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Penang, Malaysia
Duration: 2020 Apr 62020 Apr 21

Publication series

Name4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings

Conference

Conference4th Electron Devices Technology and Manufacturing Conference, EDTM 2020
CountryMalaysia
CityPenang
Period20/4/620/4/21

Keywords

  • diamond
  • FET
  • reliability
  • voltage stress

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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