@inproceedings{3609c183df244a97add18590712bab33,
title = "Reliability of 2DEG Diamond FET by Harsh-Continuous Stress Voltage Approach",
abstract = "In this paper, a simple and time effective reliability stress measurement is done by continuous breakdown cycle method and continuous cycles of stress method under varying voltages. We apply this approach on transparent polycrystalline diamond FET for two different thickness of Al2O3 namely 400nm and 600nm as counter destructive passivation layer ",
keywords = "FET, diamond, reliability, voltage stress",
author = "Nashaain, {N. M.} and S. Falina and Y. Kitabayashi and D. Matsumura and Manaf, {A. A.} and Z. Hassan and M. Syamsul and H. Kawarada",
note = "Funding Information: ACKNOWLEDGMENT This work was supported in part by a Grant-in-Aid for Fundamental Research S from JSPS under Grant 26220903 and in part by the Advanced Low Carbon Technology Research and Development Program of JST. Publisher Copyright: {\textcopyright} 2020 IEEE.; 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 ; Conference date: 06-04-2020 Through 21-04-2020",
year = "2020",
month = apr,
doi = "10.1109/EDTM47692.2020.9117897",
language = "English",
series = "4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings",
}