RELIABILITY OF NANO-METER THICK MULTI-LAYER DIELECTRIC FILMS ON POLY-CRYSTALLINE SILICON.

Y. Ohji, T. Kusaka, I. Yoshida, A. Hiraiwa, K. Yagi, K. Mukai, O. Kasahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

39 Citations (Scopus)

Abstract

The use of a double-layer dielectric film (SiO//2/Si//3N//4) on poly-Si is proposed as a way to achieve the reduced thickness films needed to scale down VLSIs. The oxidation of Si//3N//4 reduces leakage current and defect density. It is shown that a double-layer film with a thinner top oxide layer is harder to break down, so, the thickness of the top oxide layer must be reduced in order to increase the reliability of double-layer dielectrics. Moreover, there are no edge effects on the reliability of double-layer dielectric films due to the patterned poly-Si electrode. These results, confirm that SiO//2/Si//3N//4 is a highly reliable nanometer-thick dielectric for use on poly-Si.

Original languageEnglish
Title of host publicationAnnual Proceedings - Reliability Physics (Symposium)
PublisherIEEE
Pages55-59
Number of pages5
Publication statusPublished - 1987
Externally publishedYes

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Ohji, Y., Kusaka, T., Yoshida, I., Hiraiwa, A., Yagi, K., Mukai, K., & Kasahara, O. (1987). RELIABILITY OF NANO-METER THICK MULTI-LAYER DIELECTRIC FILMS ON POLY-CRYSTALLINE SILICON. In Annual Proceedings - Reliability Physics (Symposium) (pp. 55-59). IEEE.