Reliability of source-to-drain non-uniformly doped channel (NUDC) mOSFETs for sub-quarter-micron region

Masayoshi Shirahata, Yoshinori Okumura, Yuji Abe, Takashi Kuroi, Masahide Inuishi, Hirokazu Miyoshi

Research output: Contribution to journalArticle

Abstract

We present an analysis of hot carrier degradation in source-to-drain nonuniformely doped channel (NUDC) metal oxide semiconductor field effect transistors (MOSFETs). Simulation has been performed in order to investigate the influence of the NUDC structure on the device characteristics. It is demonstrated that the hot carrier resistance of NUDC MOSFETs is almost the same as that of conventional MOSFETs when thin gate oxide is used. This is due to the drain electric field strength of NUDC MOSFETs, which becomes the same as that of conventional MOSFETs when the gate oxide is thin, since the drain electric field is not only affected by the channel impurity profile but also strongly influenced by the gate electrode.

Original languageEnglish
Pages (from-to)874-881
Number of pages8
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number2 SUPPL. B
DOIs
Publication statusPublished - 1996 Feb
Externally publishedYes

Keywords

  • Channel engineering
  • High performance MOSFETs
  • Low voltage devices
  • Reliability
  • Simulation analysis

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Reliability of source-to-drain non-uniformly doped channel (NUDC) mOSFETs for sub-quarter-micron region'. Together they form a unique fingerprint.

  • Cite this