Reliability of source-to-drain non-uniformly doped channel (NUDC) mOSFETs for sub-quarter-micron region

We present an analysis of hot carrier degradation in source-to-drain nonuniformely doped channel (NUDC) metal oxide semiconductor field effect transistors (MOSFETs). Simulation has been performed in order to investigate the influence of the NUDC structure on the device characteristics. It is demonstrated that the hot carrier resistance of NUDC MOSFETs is almost the same as that of conventional MOSFETs when thin gate oxide is used. This is due to the drain electric field strength of NUDC MOSFETs, which becomes the same as that of conventional MOSFETs when the gate oxide is thin, since the drain electric field is not only affected by the channel impurity profile but also strongly influenced by the gate electrode.