Reliable single atom doping and discrete dopant effects on transistor performance

Takahiro Shinada, Masahiro Hori, Yukinori Ono, Keigo Taira, Akira Komatsubara, Takashi Tanii, Tetsuo Endoh, Iwao Ohdomari

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    For reliable deterministic single-atom doping, i.e. single-ion implantation (SII), improvement of single-ion detection efficiency is successfully achieved by controlling channel potential using back-gate of transistor. We also fabricate transistors whose channel dopnats are introduced one-by-one using SII and find that subthreshold current becomes larger when dopants are located at drain-side than source-side. The single-atom doping method could contribute to the novel device development beneficial for extensibility of doped-channel device technologies towards atomic-scale devices and single-dopant device.

    Original languageEnglish
    Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
    DOIs
    Publication statusPublished - 2010
    Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA
    Duration: 2010 Dec 62010 Dec 8

    Other

    Other2010 IEEE International Electron Devices Meeting, IEDM 2010
    CitySan Francisco, CA
    Period10/12/610/12/8

    Fingerprint

    Transistors
    transistors
    Doping (additives)
    Atoms
    Ion implantation
    atoms
    ion implantation
    Gates (transistor)
    Ions
    ions

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry

    Cite this

    Shinada, T., Hori, M., Ono, Y., Taira, K., Komatsubara, A., Tanii, T., ... Ohdomari, I. (2010). Reliable single atom doping and discrete dopant effects on transistor performance. In Technical Digest - International Electron Devices Meeting, IEDM [5703428] https://doi.org/10.1109/IEDM.2010.5703428

    Reliable single atom doping and discrete dopant effects on transistor performance. / Shinada, Takahiro; Hori, Masahiro; Ono, Yukinori; Taira, Keigo; Komatsubara, Akira; Tanii, Takashi; Endoh, Tetsuo; Ohdomari, Iwao.

    Technical Digest - International Electron Devices Meeting, IEDM. 2010. 5703428.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Shinada, T, Hori, M, Ono, Y, Taira, K, Komatsubara, A, Tanii, T, Endoh, T & Ohdomari, I 2010, Reliable single atom doping and discrete dopant effects on transistor performance. in Technical Digest - International Electron Devices Meeting, IEDM., 5703428, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, 10/12/6. https://doi.org/10.1109/IEDM.2010.5703428
    Shinada T, Hori M, Ono Y, Taira K, Komatsubara A, Tanii T et al. Reliable single atom doping and discrete dopant effects on transistor performance. In Technical Digest - International Electron Devices Meeting, IEDM. 2010. 5703428 https://doi.org/10.1109/IEDM.2010.5703428
    Shinada, Takahiro ; Hori, Masahiro ; Ono, Yukinori ; Taira, Keigo ; Komatsubara, Akira ; Tanii, Takashi ; Endoh, Tetsuo ; Ohdomari, Iwao. / Reliable single atom doping and discrete dopant effects on transistor performance. Technical Digest - International Electron Devices Meeting, IEDM. 2010.
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