Reliable single atom doping and discrete dopant effects on transistor performance

Takahiro Shinada, Masahiro Hori, Yukinori Ono, Keigo Taira, Akira Komatsubara, Takashi Tanii, Tetsuo Endoh, Iwao Ohdomari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

For reliable deterministic single-atom doping, i.e. single-ion implantation (SII), improvement of single-ion detection efficiency is successfully achieved by controlling channel potential using back-gate of transistor. We also fabricate transistors whose channel dopnats are introduced one-by-one using SII and find that subthreshold current becomes larger when dopants are located at drain-side than source-side. The single-atom doping method could contribute to the novel device development beneficial for extensibility of doped-channel device technologies towards atomic-scale devices and single-dopant device.

Original languageEnglish
Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages26.5.1-26.5.4
DOIs
Publication statusPublished - 2010 Dec 1
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: 2010 Dec 62010 Dec 8

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period10/12/610/12/8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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