Reliable single atom doping and discrete dopant effects on transistor performance

Takahiro Shinada, Masahiro Hori, Yukinori Ono, Keigo Taira, Akira Komatsubara, Takashi Tanii, Tetsuo Endoh, Iwao Ohdomari

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    For reliable deterministic single-atom doping, i.e. single-ion implantation (SII), improvement of single-ion detection efficiency is successfully achieved by controlling channel potential using back-gate of transistor. We also fabricate transistors whose channel dopnats are introduced one-by-one using SII and find that subthreshold current becomes larger when dopants are located at drain-side than source-side. The single-atom doping method could contribute to the novel device development beneficial for extensibility of doped-channel device technologies towards atomic-scale devices and single-dopant device.

    Original languageEnglish
    Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
    DOIs
    Publication statusPublished - 2010
    Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA
    Duration: 2010 Dec 62010 Dec 8

    Other

    Other2010 IEEE International Electron Devices Meeting, IEDM 2010
    CitySan Francisco, CA
    Period10/12/610/12/8

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    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry

    Cite this

    Shinada, T., Hori, M., Ono, Y., Taira, K., Komatsubara, A., Tanii, T., Endoh, T., & Ohdomari, I. (2010). Reliable single atom doping and discrete dopant effects on transistor performance. In Technical Digest - International Electron Devices Meeting, IEDM [5703428] https://doi.org/10.1109/IEDM.2010.5703428