Removal conditions of films deposited on probe surface

Isamu Kato; Tsuyoshi Shimoda; Toshihiro Yamagishi

Removal conditions of films deposited on probe surface

Isamu Kato, Tsuyoshi Shimoda, Toshihiro Yamagishi

Waseda University

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Silicon nitride films deposited on a cylindrical probe surface are removed by ion bombardment in pure N₂ plasma in the chamber of the double-tubed coaxial-line-type microwave plasma chemical vapor deposition system, and removal rates of the films are measured. The experiments are carried out with variation of the probe position in the chamber and the bombardment voltage applied to the probe. It has been clarified that the removal rate is proportional to the ion flux density. From this result, general removal conditions of silicon nitride films by ion bombardment have been clarified.

Original language	English
Pages (from-to)	3586-3589
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	33
Issue number	6 A
Publication status	Published - 1994 Jun

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

Fingerprint Dive into the research topics of 'Removal conditions of films deposited on probe surface'. Together they form a unique fingerprint.

Cite this

@article{5d3fab0a80b840f59025ea24a8cfd0c4,

title = "Removal conditions of films deposited on probe surface",

abstract = "Silicon nitride films deposited on a cylindrical probe surface are removed by ion bombardment in pure N2 plasma in the chamber of the double-tubed coaxial-line-type microwave plasma chemical vapor deposition system, and removal rates of the films are measured. The experiments are carried out with variation of the probe position in the chamber and the bombardment voltage applied to the probe. It has been clarified that the removal rate is proportional to the ion flux density. From this result, general removal conditions of silicon nitride films by ion bombardment have been clarified.",

author = "Isamu Kato and Tsuyoshi Shimoda and Toshihiro Yamagishi",

year = "1994",

month = jun,

language = "English",

volume = "33",

pages = "3586--3589",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "6 A",

}

TY - JOUR

T1 - Removal conditions of films deposited on probe surface

AU - Kato, Isamu

AU - Shimoda, Tsuyoshi

AU - Yamagishi, Toshihiro

PY - 1994/6

Y1 - 1994/6

N2 - Silicon nitride films deposited on a cylindrical probe surface are removed by ion bombardment in pure N2 plasma in the chamber of the double-tubed coaxial-line-type microwave plasma chemical vapor deposition system, and removal rates of the films are measured. The experiments are carried out with variation of the probe position in the chamber and the bombardment voltage applied to the probe. It has been clarified that the removal rate is proportional to the ion flux density. From this result, general removal conditions of silicon nitride films by ion bombardment have been clarified.

AB - Silicon nitride films deposited on a cylindrical probe surface are removed by ion bombardment in pure N2 plasma in the chamber of the double-tubed coaxial-line-type microwave plasma chemical vapor deposition system, and removal rates of the films are measured. The experiments are carried out with variation of the probe position in the chamber and the bombardment voltage applied to the probe. It has been clarified that the removal rate is proportional to the ion flux density. From this result, general removal conditions of silicon nitride films by ion bombardment have been clarified.

UR - http://www.scopus.com/inward/record.url?scp=0028442395&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028442395&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0028442395

VL - 33

SP - 3586

EP - 3589

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 6 A

ER -