Removal conditions of films deposited on probe surface

Isamu Kato, Tsuyoshi Shimoda, Toshihiro Yamagishi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Silicon nitride films deposited on a cylindrical probe surface are removed by ion bombardment in pure N2 plasma in the chamber of the double-tubed coaxial-line-type microwave plasma chemical vapor deposition system, and removal rates of the films are measured. The experiments are carried out with variation of the probe position in the chamber and the bombardment voltage applied to the probe. It has been clarified that the removal rate is proportional to the ion flux density. From this result, general removal conditions of silicon nitride films by ion bombardment have been clarified.

Original languageEnglish
Pages (from-to)3586-3589
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume33
Issue number6 A
Publication statusPublished - 1994 Jun

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bombardment
Ion bombardment
Silicon nitride
silicon nitrides
probes
chambers
Plasmas
ions
Chemical vapor deposition
flux density
Microwaves
vapor deposition
Fluxes
microwaves
Ions
Electric potential
electric potential
Experiments

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Removal conditions of films deposited on probe surface. / Kato, Isamu; Shimoda, Tsuyoshi; Yamagishi, Toshihiro.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 33, No. 6 A, 06.1994, p. 3586-3589.

Research output: Contribution to journalArticle

Kato, Isamu ; Shimoda, Tsuyoshi ; Yamagishi, Toshihiro. / Removal conditions of films deposited on probe surface. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1994 ; Vol. 33, No. 6 A. pp. 3586-3589.
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