Abstract
Silicon nitride films deposited on a cylindrical probe surface are removed by ion bombardment in pure N2 plasma in the chamber of the double-tubed coaxial-line-type microwave plasma chemical vapor deposition system, and removal rates of the films are measured. The experiments are carried out with variation of the probe position in the chamber and the bombardment voltage applied to the probe. It has been clarified that the removal rate is proportional to the ion flux density. From this result, general removal conditions of silicon nitride films by ion bombardment have been clarified.
| Original language | English |
|---|---|
| Pages (from-to) | 3586-3589 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 33 |
| Issue number | 6 A |
| Publication status | Published - 1994 Jun |
Fingerprint
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Removal conditions of films deposited on probe surface. / Kato, Isamu; Shimoda, Tsuyoshi; Yamagishi, Toshihiro.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 33, No. 6 A, 06.1994, p. 3586-3589.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Removal conditions of films deposited on probe surface
AU - Kato, Isamu
AU - Shimoda, Tsuyoshi
AU - Yamagishi, Toshihiro
PY - 1994/6
Y1 - 1994/6
N2 - Silicon nitride films deposited on a cylindrical probe surface are removed by ion bombardment in pure N2 plasma in the chamber of the double-tubed coaxial-line-type microwave plasma chemical vapor deposition system, and removal rates of the films are measured. The experiments are carried out with variation of the probe position in the chamber and the bombardment voltage applied to the probe. It has been clarified that the removal rate is proportional to the ion flux density. From this result, general removal conditions of silicon nitride films by ion bombardment have been clarified.
AB - Silicon nitride films deposited on a cylindrical probe surface are removed by ion bombardment in pure N2 plasma in the chamber of the double-tubed coaxial-line-type microwave plasma chemical vapor deposition system, and removal rates of the films are measured. The experiments are carried out with variation of the probe position in the chamber and the bombardment voltage applied to the probe. It has been clarified that the removal rate is proportional to the ion flux density. From this result, general removal conditions of silicon nitride films by ion bombardment have been clarified.
UR - http://www.scopus.com/inward/record.url?scp=0028442395&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0028442395&partnerID=8YFLogxK
M3 - Article
VL - 33
SP - 3586
EP - 3589
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6 A
ER -