Residual hydrogen in polycrystalline silicon produced from monosilane by fluidized-bed CVD method

Toshinori Kojima, Takashi Odagiri, Masahiko Matsukata, Shigeru Yamada

Research output: Contribution to journalArticle

Abstract

It has been pointed out that polycrystalline silicon particles produced from monosilane by the fluidized -bed CVD method contain residual hydrogen that causes disturbance of flow in a crucible in the CZ process. In the present work, the residual hydrogen was desorbed from produced Si particles by heat treatment. The activation energy for the hydrogen desorption was determined by the temperature-programmed desorption (TPD) technique. By FTIR, various types of Si-H bonds were found in the Si particles produced. The adsorbance area was decreased with increase in the desorbed hydrogen by TPD. From this relationship, the total amount of residual hydrogen was determined to be around 0.05% of the hydrogen contained in the reacted monosilane. The particle density of Si particles increased" linearly almost up to the true density, with a decrease in the absorbance area of FTIR by the heat treatment.

Original languageEnglish
Pages (from-to)701-707
Number of pages7
JournalKagaku Kogaku Ronbunshu
Volume18
Issue number5
DOIs
Publication statusPublished - 1992
Externally publishedYes

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Polysilicon
Fluidized beds
Hydrogen
Chemical vapor deposition
Temperature programmed desorption
Heat treatment
Crucibles
monosilane
Desorption
Activation energy

Keywords

  • Chemical vapor deposition
  • Fluidized bed
  • Polycrystalline silicon
  • Residual hydrogen
  • Temperature-Programmed desorption

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Chemistry(all)

Cite this

Residual hydrogen in polycrystalline silicon produced from monosilane by fluidized-bed CVD method. / Kojima, Toshinori; Odagiri, Takashi; Matsukata, Masahiko; Yamada, Shigeru.

In: Kagaku Kogaku Ronbunshu, Vol. 18, No. 5, 1992, p. 701-707.

Research output: Contribution to journalArticle

Kojima, Toshinori ; Odagiri, Takashi ; Matsukata, Masahiko ; Yamada, Shigeru. / Residual hydrogen in polycrystalline silicon produced from monosilane by fluidized-bed CVD method. In: Kagaku Kogaku Ronbunshu. 1992 ; Vol. 18, No. 5. pp. 701-707.
@article{729dd4293b2f4f8292f5801636f9b524,
title = "Residual hydrogen in polycrystalline silicon produced from monosilane by fluidized-bed CVD method",
abstract = "It has been pointed out that polycrystalline silicon particles produced from monosilane by the fluidized -bed CVD method contain residual hydrogen that causes disturbance of flow in a crucible in the CZ process. In the present work, the residual hydrogen was desorbed from produced Si particles by heat treatment. The activation energy for the hydrogen desorption was determined by the temperature-programmed desorption (TPD) technique. By FTIR, various types of Si-H bonds were found in the Si particles produced. The adsorbance area was decreased with increase in the desorbed hydrogen by TPD. From this relationship, the total amount of residual hydrogen was determined to be around 0.05{\%} of the hydrogen contained in the reacted monosilane. The particle density of Si particles increased{"} linearly almost up to the true density, with a decrease in the absorbance area of FTIR by the heat treatment.",
keywords = "Chemical vapor deposition, Fluidized bed, Polycrystalline silicon, Residual hydrogen, Temperature-Programmed desorption",
author = "Toshinori Kojima and Takashi Odagiri and Masahiko Matsukata and Shigeru Yamada",
year = "1992",
doi = "10.1252/kakoronbunshu.18.701",
language = "English",
volume = "18",
pages = "701--707",
journal = "Kagaku Kogaku Ronbunshu",
issn = "0386-216X",
publisher = "Society of Chemical Engineers, Japan",
number = "5",

}

TY - JOUR

T1 - Residual hydrogen in polycrystalline silicon produced from monosilane by fluidized-bed CVD method

AU - Kojima, Toshinori

AU - Odagiri, Takashi

AU - Matsukata, Masahiko

AU - Yamada, Shigeru

PY - 1992

Y1 - 1992

N2 - It has been pointed out that polycrystalline silicon particles produced from monosilane by the fluidized -bed CVD method contain residual hydrogen that causes disturbance of flow in a crucible in the CZ process. In the present work, the residual hydrogen was desorbed from produced Si particles by heat treatment. The activation energy for the hydrogen desorption was determined by the temperature-programmed desorption (TPD) technique. By FTIR, various types of Si-H bonds were found in the Si particles produced. The adsorbance area was decreased with increase in the desorbed hydrogen by TPD. From this relationship, the total amount of residual hydrogen was determined to be around 0.05% of the hydrogen contained in the reacted monosilane. The particle density of Si particles increased" linearly almost up to the true density, with a decrease in the absorbance area of FTIR by the heat treatment.

AB - It has been pointed out that polycrystalline silicon particles produced from monosilane by the fluidized -bed CVD method contain residual hydrogen that causes disturbance of flow in a crucible in the CZ process. In the present work, the residual hydrogen was desorbed from produced Si particles by heat treatment. The activation energy for the hydrogen desorption was determined by the temperature-programmed desorption (TPD) technique. By FTIR, various types of Si-H bonds were found in the Si particles produced. The adsorbance area was decreased with increase in the desorbed hydrogen by TPD. From this relationship, the total amount of residual hydrogen was determined to be around 0.05% of the hydrogen contained in the reacted monosilane. The particle density of Si particles increased" linearly almost up to the true density, with a decrease in the absorbance area of FTIR by the heat treatment.

KW - Chemical vapor deposition

KW - Fluidized bed

KW - Polycrystalline silicon

KW - Residual hydrogen

KW - Temperature-Programmed desorption

UR - http://www.scopus.com/inward/record.url?scp=84946088856&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84946088856&partnerID=8YFLogxK

U2 - 10.1252/kakoronbunshu.18.701

DO - 10.1252/kakoronbunshu.18.701

M3 - Article

VL - 18

SP - 701

EP - 707

JO - Kagaku Kogaku Ronbunshu

JF - Kagaku Kogaku Ronbunshu

SN - 0386-216X

IS - 5

ER -