Abstract
It has been pointed out that polycrystalline silicon particles produced from monosilane by the fluidized -bed CVD method contain residual hydrogen that causes disturbance of flow in a crucible in the CZ process. In the present work, the residual hydrogen was desorbed from produced Si particles by heat treatment. The activation energy for the hydrogen desorption was determined by the temperature-programmed desorption (TPD) technique. By FTIR, various types of Si-H bonds were found in the Si particles produced. The adsorbance area was decreased with increase in the desorbed hydrogen by TPD. From this relationship, the total amount of residual hydrogen was determined to be around 0.05% of the hydrogen contained in the reacted monosilane. The particle density of Si particles increased" linearly almost up to the true density, with a decrease in the absorbance area of FTIR by the heat treatment.
| Original language | English |
|---|---|
| Pages (from-to) | 701-707 |
| Number of pages | 7 |
| Journal | Kagaku Kogaku Ronbunshu |
| Volume | 18 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 1992 |
| Externally published | Yes |
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Keywords
- Chemical vapor deposition
- Fluidized bed
- Polycrystalline silicon
- Residual hydrogen
- Temperature-Programmed desorption
ASJC Scopus subject areas
- Chemical Engineering(all)
- Chemistry(all)
Cite this
Residual hydrogen in polycrystalline silicon produced from monosilane by fluidized-bed CVD method. / Kojima, Toshinori; Odagiri, Takashi; Matsukata, Masahiko; Yamada, Shigeru.
In: Kagaku Kogaku Ronbunshu, Vol. 18, No. 5, 1992, p. 701-707.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Residual hydrogen in polycrystalline silicon produced from monosilane by fluidized-bed CVD method
AU - Kojima, Toshinori
AU - Odagiri, Takashi
AU - Matsukata, Masahiko
AU - Yamada, Shigeru
PY - 1992
Y1 - 1992
N2 - It has been pointed out that polycrystalline silicon particles produced from monosilane by the fluidized -bed CVD method contain residual hydrogen that causes disturbance of flow in a crucible in the CZ process. In the present work, the residual hydrogen was desorbed from produced Si particles by heat treatment. The activation energy for the hydrogen desorption was determined by the temperature-programmed desorption (TPD) technique. By FTIR, various types of Si-H bonds were found in the Si particles produced. The adsorbance area was decreased with increase in the desorbed hydrogen by TPD. From this relationship, the total amount of residual hydrogen was determined to be around 0.05% of the hydrogen contained in the reacted monosilane. The particle density of Si particles increased" linearly almost up to the true density, with a decrease in the absorbance area of FTIR by the heat treatment.
AB - It has been pointed out that polycrystalline silicon particles produced from monosilane by the fluidized -bed CVD method contain residual hydrogen that causes disturbance of flow in a crucible in the CZ process. In the present work, the residual hydrogen was desorbed from produced Si particles by heat treatment. The activation energy for the hydrogen desorption was determined by the temperature-programmed desorption (TPD) technique. By FTIR, various types of Si-H bonds were found in the Si particles produced. The adsorbance area was decreased with increase in the desorbed hydrogen by TPD. From this relationship, the total amount of residual hydrogen was determined to be around 0.05% of the hydrogen contained in the reacted monosilane. The particle density of Si particles increased" linearly almost up to the true density, with a decrease in the absorbance area of FTIR by the heat treatment.
KW - Chemical vapor deposition
KW - Fluidized bed
KW - Polycrystalline silicon
KW - Residual hydrogen
KW - Temperature-Programmed desorption
UR - http://www.scopus.com/inward/record.url?scp=84946088856&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84946088856&partnerID=8YFLogxK
U2 - 10.1252/kakoronbunshu.18.701
DO - 10.1252/kakoronbunshu.18.701
M3 - Article
AN - SCOPUS:84946088856
VL - 18
SP - 701
EP - 707
JO - Kagaku Kogaku Ronbunshu
JF - Kagaku Kogaku Ronbunshu
SN - 0386-216X
IS - 5
ER -