TY - JOUR
T1 - Residual ion damage in GaAs
T2 - C prepared by combined ion beam and molecular beam epitaxy
AU - Iida, Tsutomu
AU - Makita, Yunosuke
AU - Horn, Joachim
AU - Hartnagel, Hans L.
AU - Shima, Takayuki
AU - Kimura, Shinji
AU - Shikama, Kazuyuki
AU - Sanpei, Hirokazu
AU - Sandhu, Adarsh
AU - Kobayashi, Naoto
AU - Uekusa, Shin Ichiro
PY - 1997/5
Y1 - 1997/5
N2 - Ion-induced damage in the films grown by low-energy (30-30 000 eV) ion-beam doping method was investigated using the minority-carrier lifetime and temperature-dependent Hall-effect measurements. Minority-carrier lifetime measurement using scanning tunneling microscope stimulated time-resolved luminescence (STM-L) demonstrated the presence of residual ion damage in as-grown samples at C+-ion acceleration energy EC+ = 240 and 350 eV, and annealed ones at EC+ = 5, 10 and 30 keV. For EC+= 30 eV, no ion damage was observed in as-grown condition. For EC+ ≥ 5 keV, ion damage remains even after high-temperature annealing and degrades the activation of C atoms. In the temperature-dependent Hall-effect measurements, samples with EC+ = 240 and 350 eV showed unusual characteristics in net hole carrier concentration (|NA - ND|) with decreasing temperature. For EC+ = 10 and 30 keV, |NA - ND| in lower temperature regions indicates higher values than that obtained at room temperature. It was suggested that the conduction mechanisms of these two specimens are significantly affected by impurity conduction mainly due to ion damage.
AB - Ion-induced damage in the films grown by low-energy (30-30 000 eV) ion-beam doping method was investigated using the minority-carrier lifetime and temperature-dependent Hall-effect measurements. Minority-carrier lifetime measurement using scanning tunneling microscope stimulated time-resolved luminescence (STM-L) demonstrated the presence of residual ion damage in as-grown samples at C+-ion acceleration energy EC+ = 240 and 350 eV, and annealed ones at EC+ = 5, 10 and 30 keV. For EC+= 30 eV, no ion damage was observed in as-grown condition. For EC+ ≥ 5 keV, ion damage remains even after high-temperature annealing and degrades the activation of C atoms. In the temperature-dependent Hall-effect measurements, samples with EC+ = 240 and 350 eV showed unusual characteristics in net hole carrier concentration (|NA - ND|) with decreasing temperature. For EC+ = 10 and 30 keV, |NA - ND| in lower temperature regions indicates higher values than that obtained at room temperature. It was suggested that the conduction mechanisms of these two specimens are significantly affected by impurity conduction mainly due to ion damage.
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M3 - Article
AN - SCOPUS:0031547881
SN - 0168-583X
VL - 127-128
SP - 884
EP - 887
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
ER -