Residual order within thermally grown amorphous SiO2 on crystalline silicon

K. Tatsumura, Takanobu Watanabe, D. Yamasaki, T. Shimura, M. Umeno, I. Ohdomari

    Research output: Contribution to journalArticle

    44 Citations (Scopus)

    Abstract

    The origin of x-ray diffraction peaks observed on the crystal truncation rods (CTR's) in reciprocal space for thermally grown SiO2 films has been investigated by large-scale atomistic simulation of silicon oxidation. Three models of SiO2 on Si(001), Si(111), and Si(113) were formed by introducing oxygen atoms in crystalline Si from the surfaces in an atom-by-atom manner. The SiO2 structures are classified as being amorphous in conventional characterizations, but retain the residual order originating from the {111} atomic planes in their parent crystals. The calculated diffraction patterns exhibit intensity peaks with Laue-function-like fringe profiles along the CTR's, at positions depending on the substrate orientations, agreeing quite well with experimental results.

    Original languageEnglish
    Article number085212
    Pages (from-to)852121-852125
    Number of pages5
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume69
    Issue number8
    Publication statusPublished - 2004 Feb

    Fingerprint

    Silicon
    Crystalline materials
    Atoms
    Crystals
    silicon
    rods
    crystals
    approximation
    Crystal orientation
    Diffraction patterns
    atoms
    oxygen atoms
    x ray diffraction
    diffraction patterns
    Diffraction
    Oxygen
    X rays
    Oxidation
    oxidation
    Substrates

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Tatsumura, K., Watanabe, T., Yamasaki, D., Shimura, T., Umeno, M., & Ohdomari, I. (2004). Residual order within thermally grown amorphous SiO2 on crystalline silicon. Physical Review B - Condensed Matter and Materials Physics, 69(8), 852121-852125. [085212].

    Residual order within thermally grown amorphous SiO2 on crystalline silicon. / Tatsumura, K.; Watanabe, Takanobu; Yamasaki, D.; Shimura, T.; Umeno, M.; Ohdomari, I.

    In: Physical Review B - Condensed Matter and Materials Physics, Vol. 69, No. 8, 085212, 02.2004, p. 852121-852125.

    Research output: Contribution to journalArticle

    Tatsumura, K, Watanabe, T, Yamasaki, D, Shimura, T, Umeno, M & Ohdomari, I 2004, 'Residual order within thermally grown amorphous SiO2 on crystalline silicon', Physical Review B - Condensed Matter and Materials Physics, vol. 69, no. 8, 085212, pp. 852121-852125.
    Tatsumura K, Watanabe T, Yamasaki D, Shimura T, Umeno M, Ohdomari I. Residual order within thermally grown amorphous SiO2 on crystalline silicon. Physical Review B - Condensed Matter and Materials Physics. 2004 Feb;69(8):852121-852125. 085212.
    Tatsumura, K. ; Watanabe, Takanobu ; Yamasaki, D. ; Shimura, T. ; Umeno, M. ; Ohdomari, I. / Residual order within thermally grown amorphous SiO2 on crystalline silicon. In: Physical Review B - Condensed Matter and Materials Physics. 2004 ; Vol. 69, No. 8. pp. 852121-852125.
    @article{384b4d91316f47e8b9edf247c1a6b6a2,
    title = "Residual order within thermally grown amorphous SiO2 on crystalline silicon",
    abstract = "The origin of x-ray diffraction peaks observed on the crystal truncation rods (CTR's) in reciprocal space for thermally grown SiO2 films has been investigated by large-scale atomistic simulation of silicon oxidation. Three models of SiO2 on Si(001), Si(111), and Si(113) were formed by introducing oxygen atoms in crystalline Si from the surfaces in an atom-by-atom manner. The SiO2 structures are classified as being amorphous in conventional characterizations, but retain the residual order originating from the {111} atomic planes in their parent crystals. The calculated diffraction patterns exhibit intensity peaks with Laue-function-like fringe profiles along the CTR's, at positions depending on the substrate orientations, agreeing quite well with experimental results.",
    author = "K. Tatsumura and Takanobu Watanabe and D. Yamasaki and T. Shimura and M. Umeno and I. Ohdomari",
    year = "2004",
    month = "2",
    language = "English",
    volume = "69",
    pages = "852121--852125",
    journal = "Physical Review B-Condensed Matter",
    issn = "0163-1829",
    publisher = "American Institute of Physics Publising LLC",
    number = "8",

    }

    TY - JOUR

    T1 - Residual order within thermally grown amorphous SiO2 on crystalline silicon

    AU - Tatsumura, K.

    AU - Watanabe, Takanobu

    AU - Yamasaki, D.

    AU - Shimura, T.

    AU - Umeno, M.

    AU - Ohdomari, I.

    PY - 2004/2

    Y1 - 2004/2

    N2 - The origin of x-ray diffraction peaks observed on the crystal truncation rods (CTR's) in reciprocal space for thermally grown SiO2 films has been investigated by large-scale atomistic simulation of silicon oxidation. Three models of SiO2 on Si(001), Si(111), and Si(113) were formed by introducing oxygen atoms in crystalline Si from the surfaces in an atom-by-atom manner. The SiO2 structures are classified as being amorphous in conventional characterizations, but retain the residual order originating from the {111} atomic planes in their parent crystals. The calculated diffraction patterns exhibit intensity peaks with Laue-function-like fringe profiles along the CTR's, at positions depending on the substrate orientations, agreeing quite well with experimental results.

    AB - The origin of x-ray diffraction peaks observed on the crystal truncation rods (CTR's) in reciprocal space for thermally grown SiO2 films has been investigated by large-scale atomistic simulation of silicon oxidation. Three models of SiO2 on Si(001), Si(111), and Si(113) were formed by introducing oxygen atoms in crystalline Si from the surfaces in an atom-by-atom manner. The SiO2 structures are classified as being amorphous in conventional characterizations, but retain the residual order originating from the {111} atomic planes in their parent crystals. The calculated diffraction patterns exhibit intensity peaks with Laue-function-like fringe profiles along the CTR's, at positions depending on the substrate orientations, agreeing quite well with experimental results.

    UR - http://www.scopus.com/inward/record.url?scp=3342946005&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=3342946005&partnerID=8YFLogxK

    M3 - Article

    VL - 69

    SP - 852121

    EP - 852125

    JO - Physical Review B-Condensed Matter

    JF - Physical Review B-Condensed Matter

    SN - 0163-1829

    IS - 8

    M1 - 085212

    ER -