Residual order within thermally grown amorphous SiO2 on crystalline silicon

K. Tatsumura, Takanobu Watanabe, D. Yamasaki, T. Shimura, M. Umeno, I. Ohdomari

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    Abstract

    The origin of x-ray diffraction peaks observed on the crystal truncation rods (CTR's) in reciprocal space for thermally grown SiO2 films has been investigated by large-scale atomistic simulation of silicon oxidation. Three models of SiO2 on Si(001), Si(111), and Si(113) were formed by introducing oxygen atoms in crystalline Si from the surfaces in an atom-by-atom manner. The SiO2 structures are classified as being amorphous in conventional characterizations, but retain the residual order originating from the {111} atomic planes in their parent crystals. The calculated diffraction patterns exhibit intensity peaks with Laue-function-like fringe profiles along the CTR's, at positions depending on the substrate orientations, agreeing quite well with experimental results.

    Original languageEnglish
    Article number085212
    Pages (from-to)852121-852125
    Number of pages5
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume69
    Issue number8
    Publication statusPublished - 2004 Feb

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    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Tatsumura, K., Watanabe, T., Yamasaki, D., Shimura, T., Umeno, M., & Ohdomari, I. (2004). Residual order within thermally grown amorphous SiO2 on crystalline silicon. Physical Review B - Condensed Matter and Materials Physics, 69(8), 852121-852125. [085212].