Abstract
Low temperature fabrication of Al 2O 3-based polymer composite thick films was performed for integrated substrate applications using the aerosol deposition (AD) process. Although AD is capable of fabricating dense ceramic films at room temperature, residual stress occurs in the deposited ceramic films due to the nature of the film growth, which is based on solidification through the impact and fracture of a starting powder. In order to solve this problem, we obtain residual stress relief by adding poly-tetra-fluoro-ethylene (PTFE), which has superior elongation and dielectric properties when used as an electronic substrate. The Al 2O 3-PTFE composite thick films were deposited by the AD method on copper foil substrates using a mixed starting powder at room temperature. The size of the Al 2O 3 crystallites in the Al 2O 3-PTFE composite thick films was 10 times larger than the crystallites in the Al 2O 3 thick films due to the cushioning effect of the soft PTFE. The Al 2O 3-PTFE composite thick films had a low dielectric constant (≈4.5) and loss tangent (≈0.002), and electrical properties that were nearly frequency independent after a low temperature annealing at below 300 °C. In addition, the Al 2O 3-PTFE composite thick films showed a superior chemical resistance during the patterning process due to the extraordinarily high chemical resistance of the PTFE.
Original language | English |
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Pages (from-to) | 287-291 |
Number of pages | 5 |
Journal | Journal of Nanoelectronics and Optoelectronics |
Volume | 7 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2012 |
Externally published | Yes |
Keywords
- Aerosol deposition
- Al O
- Integrated substrate
- Polymer composite
- PTFE
- Residual stress
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering