Resistance switching in anodic oxidized amorphous TiO2 films

Changhao Liang, Kazuya Terabe, Tsuyoshi Hasegawa, Masakazu Aono

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

A thin amorphous TiO2 layer was prepared using anodic oxidation of Ti. Resistance switching of amorphous TiO2 was investigated by sweeping in a continuous voltage scan and pulse bias voltage. The bipolar switching was observed without the need of a forming process. Switching of the Ti/amorphous-TiO2/Pt based structure showed good endurance. The switching mechanism and current-voltage characteristics were investigated from combinatorial analysis of the conducting filaments' evolution and the space-charge limited current conduction. The oxygen-vacancies migration involved redox processes, which is responsible for the recovery and rupture of sub-TiOx based conducting filaments Inside the amorphous TiO 2 layer.

Original languageEnglish
Pages (from-to)640021-640023
Number of pages3
JournalApplied Physics Express
Volume1
Issue number6
DOIs
Publication statusPublished - 2008 Jun
Externally publishedYes

Fingerprint

Amorphous films
conduction
filaments
combinatorial analysis
electric potential
endurance
Anodic oxidation
Oxygen vacancies
Current voltage characteristics
Bias voltage
Electric space charge
space charge
Durability
recovery
Recovery
oxidation
Electric potential
oxygen
pulses

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Resistance switching in anodic oxidized amorphous TiO2 films. / Liang, Changhao; Terabe, Kazuya; Hasegawa, Tsuyoshi; Aono, Masakazu.

In: Applied Physics Express, Vol. 1, No. 6, 06.2008, p. 640021-640023.

Research output: Contribution to journalArticle

Liang, Changhao ; Terabe, Kazuya ; Hasegawa, Tsuyoshi ; Aono, Masakazu. / Resistance switching in anodic oxidized amorphous TiO2 films. In: Applied Physics Express. 2008 ; Vol. 1, No. 6. pp. 640021-640023.
@article{1a583a8325ee45c69b6824ce36031e9e,
title = "Resistance switching in anodic oxidized amorphous TiO2 films",
abstract = "A thin amorphous TiO2 layer was prepared using anodic oxidation of Ti. Resistance switching of amorphous TiO2 was investigated by sweeping in a continuous voltage scan and pulse bias voltage. The bipolar switching was observed without the need of a forming process. Switching of the Ti/amorphous-TiO2/Pt based structure showed good endurance. The switching mechanism and current-voltage characteristics were investigated from combinatorial analysis of the conducting filaments' evolution and the space-charge limited current conduction. The oxygen-vacancies migration involved redox processes, which is responsible for the recovery and rupture of sub-TiOx based conducting filaments Inside the amorphous TiO 2 layer.",
author = "Changhao Liang and Kazuya Terabe and Tsuyoshi Hasegawa and Masakazu Aono",
year = "2008",
month = "6",
doi = "10.1143/APEX.1.064002",
language = "English",
volume = "1",
pages = "640021--640023",
journal = "Applied Physics Express",
issn = "1882-0778",
publisher = "Japan Society of Applied Physics",
number = "6",

}

TY - JOUR

T1 - Resistance switching in anodic oxidized amorphous TiO2 films

AU - Liang, Changhao

AU - Terabe, Kazuya

AU - Hasegawa, Tsuyoshi

AU - Aono, Masakazu

PY - 2008/6

Y1 - 2008/6

N2 - A thin amorphous TiO2 layer was prepared using anodic oxidation of Ti. Resistance switching of amorphous TiO2 was investigated by sweeping in a continuous voltage scan and pulse bias voltage. The bipolar switching was observed without the need of a forming process. Switching of the Ti/amorphous-TiO2/Pt based structure showed good endurance. The switching mechanism and current-voltage characteristics were investigated from combinatorial analysis of the conducting filaments' evolution and the space-charge limited current conduction. The oxygen-vacancies migration involved redox processes, which is responsible for the recovery and rupture of sub-TiOx based conducting filaments Inside the amorphous TiO 2 layer.

AB - A thin amorphous TiO2 layer was prepared using anodic oxidation of Ti. Resistance switching of amorphous TiO2 was investigated by sweeping in a continuous voltage scan and pulse bias voltage. The bipolar switching was observed without the need of a forming process. Switching of the Ti/amorphous-TiO2/Pt based structure showed good endurance. The switching mechanism and current-voltage characteristics were investigated from combinatorial analysis of the conducting filaments' evolution and the space-charge limited current conduction. The oxygen-vacancies migration involved redox processes, which is responsible for the recovery and rupture of sub-TiOx based conducting filaments Inside the amorphous TiO 2 layer.

UR - http://www.scopus.com/inward/record.url?scp=57649111804&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=57649111804&partnerID=8YFLogxK

U2 - 10.1143/APEX.1.064002

DO - 10.1143/APEX.1.064002

M3 - Article

VL - 1

SP - 640021

EP - 640023

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 6

ER -