Resistance switching in anodic oxidized amorphous TiO2 films

Changhao Liang*, Kazuya Terabe, Tsuyoshi Hasegawa, Masakazu Aono

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


A thin amorphous TiO2 layer was prepared using anodic oxidation of Ti. Resistance switching of amorphous TiO2 was investigated by sweeping in a continuous voltage scan and pulse bias voltage. The bipolar switching was observed without the need of a forming process. Switching of the Ti/amorphous-TiO2/Pt based structure showed good endurance. The switching mechanism and current-voltage characteristics were investigated from combinatorial analysis of the conducting filaments' evolution and the space-charge limited current conduction. The oxygen-vacancies migration involved redox processes, which is responsible for the recovery and rupture of sub-TiOx based conducting filaments Inside the amorphous TiO 2 layer.

Original languageEnglish
Pages (from-to)640021-640023
Number of pages3
JournalApplied Physics Express
Issue number6
Publication statusPublished - 2008 Jun 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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