Resistance switching of an individual Ag2S/Ag nanowire heterostructure

Changhao Liang, Kazuya Terabe, Tsuyoshi Hasegawa, Masakazu Aono

Research output: Contribution to journalArticle

61 Citations (Scopus)

Abstract

Ag/Cu-based chalcogenide ionic conductors are candidates for use in applications in resistance-switching and nonvolatile memory devices. We report the investigation of the electrical properties of individual Ag2S/Ag heteronanowires (HNWs) by atomic force microscopy (AFM) using a nanoscale-tip electrode. Hysteretic current-voltage (IV) curves and the polarity-dependent resistance-switching phenomenon in an individual Ag2S/Ag HNW were observed. A local impedance spectroscopy measurement of Ag2S/Ag HNWs was performed to reveal the interface-related electrical characteristics. The DC-bias-dependent impedance spectra suggested the occurrence of charge and mass transfer at the interface of the electrode/mixed conductor. It is proposed that reversible resistance switching originates from the creation and rupture of filament-like conducting pathways inside the Ag2S/Ag HNW.

Original languageEnglish
Article number485202
JournalNanotechnology
Volume18
Issue number48
DOIs
Publication statusPublished - 2007 Dec 5
Externally publishedYes

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Nanowires
Heterojunctions
Electrodes
Charge transfer
Atomic force microscopy
Electric properties
Mass transfer
Spectroscopy
Data storage equipment
Electric potential

ASJC Scopus subject areas

  • Materials Science(all)
  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Resistance switching of an individual Ag2S/Ag nanowire heterostructure. / Liang, Changhao; Terabe, Kazuya; Hasegawa, Tsuyoshi; Aono, Masakazu.

In: Nanotechnology, Vol. 18, No. 48, 485202, 05.12.2007.

Research output: Contribution to journalArticle

Liang, Changhao ; Terabe, Kazuya ; Hasegawa, Tsuyoshi ; Aono, Masakazu. / Resistance switching of an individual Ag2S/Ag nanowire heterostructure. In: Nanotechnology. 2007 ; Vol. 18, No. 48.
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