Resistivity control by the electrochemical removal of dopant atoms from a nanodot

Wataru Hiraya, Nozomi Mishima, Takaaki Shima, Seishiro Tai, Tohru Tsuruoka, Ilia Valov, Tsuyoshi Hasegawa

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Doping impurity atoms into semiconductor materials changes the resistance of the material. Selecting the atomic species of a dopant and the precise control of the number of dopant atoms in a unit volume can control the resistance to a desired value. The number of dopant atoms is usually controlled when the materials are synthesized. It can also be controlled after synthesizing by injecting dopant atoms using an ion implantation technique. This physical method has now enabled atom by atom implantation at the desired position. Here, we propose an additional technique, based on the electrochemical potential of dopant atoms in a material. The technique enables the dynamic control of the number of dopant atoms through the application of bias to the material. We demonstrate the controlled removal of dopant atoms using Ag2+δS and Ag-doped Ta2O5 as model materials. The change in resistance accompanying the removal of dopant atoms is also observed.

Original languageEnglish
Pages (from-to)29-40
Number of pages12
JournalFaraday Discussions
Volume213
DOIs
Publication statusPublished - 2019 Jan 1

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry

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