Resistivity control by the electrochemical removal of dopant atoms from a nanodot

Wataru Hiraya, Nozomi Mishima, Takaaki Shima, Seishiro Tai, Tohru Tsuruoka, Ilia Valov, Tsuyoshi Hasegawa

    Research output: Contribution to journalArticle

    Abstract

    Doping impurity atoms into semiconductor materials changes the resistance of the material. Selecting the atomic species of a dopant and the precise control of the number of dopant atoms in a unit volume can control the resistance to a desired value. The number of dopant atoms is usually controlled when the materials are synthesized. It can also be controlled after synthesizing by injecting dopant atoms using an ion implantation technique. This physical method has now enabled atom by atom implantation at the desired position. Here, we propose an additional technique, based on the electrochemical potential of dopant atoms in a material. The technique enables the dynamic control of the number of dopant atoms through the application of bias to the material. We demonstrate the controlled removal of dopant atoms using Ag 2+δ S and Ag-doped Ta 2 O 5 as model materials. The change in resistance accompanying the removal of dopant atoms is also observed.

    Original languageEnglish
    Pages (from-to)29-40
    Number of pages12
    JournalFaraday Discussions
    Volume213
    DOIs
    Publication statusPublished - 2019 Jan 1

    Fingerprint

    Doping (additives)
    Atoms
    electrical resistivity
    atoms
    Ion implantation
    dynamic control
    ion implantation
    implantation
    Impurities
    Semiconductor materials
    impurities

    ASJC Scopus subject areas

    • Physical and Theoretical Chemistry

    Cite this

    Resistivity control by the electrochemical removal of dopant atoms from a nanodot. / Hiraya, Wataru; Mishima, Nozomi; Shima, Takaaki; Tai, Seishiro; Tsuruoka, Tohru; Valov, Ilia; Hasegawa, Tsuyoshi.

    In: Faraday Discussions, Vol. 213, 01.01.2019, p. 29-40.

    Research output: Contribution to journalArticle

    Hiraya W, Mishima N, Shima T, Tai S, Tsuruoka T, Valov I et al. Resistivity control by the electrochemical removal of dopant atoms from a nanodot. Faraday Discussions. 2019 Jan 1;213:29-40. https://doi.org/10.1039/c8fd00099a
    Hiraya, Wataru ; Mishima, Nozomi ; Shima, Takaaki ; Tai, Seishiro ; Tsuruoka, Tohru ; Valov, Ilia ; Hasegawa, Tsuyoshi. / Resistivity control by the electrochemical removal of dopant atoms from a nanodot. In: Faraday Discussions. 2019 ; Vol. 213. pp. 29-40.
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