Resonant photocurrent at 1550 nm in an erbium low-doped silicon transistor at room temperature

Enrico Prati, Michele Celebrano, Lavinia Ghirardini, Marco Finazzi, Giorgio Ferrari, Takahiro Shinada, Keinan Gi, Yuki Chiba, Ayman Abdelghafar, Maasa Yano, Takashi Tanii

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on the photocurrent induced by 1550 nm laser irradiation in a Er-doped micron-scale silicon transistor. The erbium defects, activated in the channel of the transistor thanks to oxygen codoping, make it possible to observe a resonant photocurrent at telecom wavelength and at room temperature by using a supercontinuum laser source working in the μW range. By exploiting a back-gate, the transistor is tuned to exploit only the electrons lying in the Er-O states. We estimate a relatively small number of photoexcited atoms (∼ 4× 104) making Er-dpoed silicon a candidate for designing resonance-based frequency selective single photon detectors at 1550 nm for quantum communications.

Original languageEnglish
Title of host publication2019 Silicon Nanoelectronics Workshop, SNW 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784863487024
DOIs
Publication statusPublished - 2019 Jun 1
Event24th Silicon Nanoelectronics Workshop, SNW 2019 - Kyoto, Japan
Duration: 2019 Jun 92019 Jun 10

Publication series

Name2019 Silicon Nanoelectronics Workshop, SNW 2019

Conference

Conference24th Silicon Nanoelectronics Workshop, SNW 2019
CountryJapan
CityKyoto
Period19/6/919/6/10

Fingerprint

Erbium
Silicon
Photocurrents
Transistors
Quantum communication
Laser beam effects
Temperature
Photons
Oxygen
Detectors
Wavelength
Atoms
Defects
Electrons
Lasers

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

Cite this

Prati, E., Celebrano, M., Ghirardini, L., Finazzi, M., Ferrari, G., Shinada, T., ... Tanii, T. (2019). Resonant photocurrent at 1550 nm in an erbium low-doped silicon transistor at room temperature. In 2019 Silicon Nanoelectronics Workshop, SNW 2019 [8782962] (2019 Silicon Nanoelectronics Workshop, SNW 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SNW.2019.8782962

Resonant photocurrent at 1550 nm in an erbium low-doped silicon transistor at room temperature. / Prati, Enrico; Celebrano, Michele; Ghirardini, Lavinia; Finazzi, Marco; Ferrari, Giorgio; Shinada, Takahiro; Gi, Keinan; Chiba, Yuki; Abdelghafar, Ayman; Yano, Maasa; Tanii, Takashi.

2019 Silicon Nanoelectronics Workshop, SNW 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8782962 (2019 Silicon Nanoelectronics Workshop, SNW 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Prati, E, Celebrano, M, Ghirardini, L, Finazzi, M, Ferrari, G, Shinada, T, Gi, K, Chiba, Y, Abdelghafar, A, Yano, M & Tanii, T 2019, Resonant photocurrent at 1550 nm in an erbium low-doped silicon transistor at room temperature. in 2019 Silicon Nanoelectronics Workshop, SNW 2019., 8782962, 2019 Silicon Nanoelectronics Workshop, SNW 2019, Institute of Electrical and Electronics Engineers Inc., 24th Silicon Nanoelectronics Workshop, SNW 2019, Kyoto, Japan, 19/6/9. https://doi.org/10.23919/SNW.2019.8782962
Prati E, Celebrano M, Ghirardini L, Finazzi M, Ferrari G, Shinada T et al. Resonant photocurrent at 1550 nm in an erbium low-doped silicon transistor at room temperature. In 2019 Silicon Nanoelectronics Workshop, SNW 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8782962. (2019 Silicon Nanoelectronics Workshop, SNW 2019). https://doi.org/10.23919/SNW.2019.8782962
Prati, Enrico ; Celebrano, Michele ; Ghirardini, Lavinia ; Finazzi, Marco ; Ferrari, Giorgio ; Shinada, Takahiro ; Gi, Keinan ; Chiba, Yuki ; Abdelghafar, Ayman ; Yano, Maasa ; Tanii, Takashi. / Resonant photocurrent at 1550 nm in an erbium low-doped silicon transistor at room temperature. 2019 Silicon Nanoelectronics Workshop, SNW 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (2019 Silicon Nanoelectronics Workshop, SNW 2019).
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AU - Ferrari, Giorgio

AU - Shinada, Takahiro

AU - Gi, Keinan

AU - Chiba, Yuki

AU - Abdelghafar, Ayman

AU - Yano, Maasa

AU - Tanii, Takashi

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