Resonant photoemission of Ga1-xMnxAs at the Mn L edge

O. Rader, C. Pampuch, A. M. Shikin, W. Gudat, J. Okabayashi, Takashi Mizokawa, A. Fujimori, T. Hayashi, M. Tanaka, A. Tanaka, A. Kimura

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

Ga1-xMnxAs, x = 0.043, has been grown ex situ on GaAs(100) by low-temperature molecular-beam epitaxy. On the reprepared p(1 x 1) surface, resonant photoemission of the valence band shows a 20-fold enhancement of the Mn 3d contribution at the L3 edge. The difference spectrum is similar to our previously obtained resonant photoemission at the Mn M edge, in particular a strong satellite appears and no clear Fermi edge ruling out strong Mn 3d weight at the valence-band maximum. The x-ray absorption lineshape differs from previous publications. Our calculation based on a configuration-interaction cluster model reproduces the x-ray absorption and the L3 on-resonance photoemission spectrum for model parameters Δ, Udd, and (pdσ) consistent with our previous work and shows the same spectral shape on and off resonance thus rendering resonant photoemission measured at the L3 edge representative of the Mn 3d contribution. At the same time, the results are more bulk sensitive due to a probing depth about twice as large as for photoemission at the Mn M edge. The confirmation of our previous results obtained at the M edge calls recent photoemission results into question which report the absence of the satellite and good agreement with local-density theory.

Original languageEnglish
Article number075202
Pages (from-to)752021-752027
Number of pages7
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume69
Issue number7
Publication statusPublished - 2004 Feb
Externally publishedYes

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Photoemission
photoelectric emission
Valence bands
x ray absorption
Satellites
valence
X rays
Molecular beam epitaxy
configuration interaction
molecular beam epitaxy
augmentation

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Rader, O., Pampuch, C., Shikin, A. M., Gudat, W., Okabayashi, J., Mizokawa, T., ... Kimura, A. (2004). Resonant photoemission of Ga1-xMnxAs at the Mn L edge. Physical Review B - Condensed Matter and Materials Physics, 69(7), 752021-752027. [075202].

Resonant photoemission of Ga1-xMnxAs at the Mn L edge. / Rader, O.; Pampuch, C.; Shikin, A. M.; Gudat, W.; Okabayashi, J.; Mizokawa, Takashi; Fujimori, A.; Hayashi, T.; Tanaka, M.; Tanaka, A.; Kimura, A.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 69, No. 7, 075202, 02.2004, p. 752021-752027.

Research output: Contribution to journalArticle

Rader, O, Pampuch, C, Shikin, AM, Gudat, W, Okabayashi, J, Mizokawa, T, Fujimori, A, Hayashi, T, Tanaka, M, Tanaka, A & Kimura, A 2004, 'Resonant photoemission of Ga1-xMnxAs at the Mn L edge', Physical Review B - Condensed Matter and Materials Physics, vol. 69, no. 7, 075202, pp. 752021-752027.
Rader O, Pampuch C, Shikin AM, Gudat W, Okabayashi J, Mizokawa T et al. Resonant photoemission of Ga1-xMnxAs at the Mn L edge. Physical Review B - Condensed Matter and Materials Physics. 2004 Feb;69(7):752021-752027. 075202.
Rader, O. ; Pampuch, C. ; Shikin, A. M. ; Gudat, W. ; Okabayashi, J. ; Mizokawa, Takashi ; Fujimori, A. ; Hayashi, T. ; Tanaka, M. ; Tanaka, A. ; Kimura, A. / Resonant photoemission of Ga1-xMnxAs at the Mn L edge. In: Physical Review B - Condensed Matter and Materials Physics. 2004 ; Vol. 69, No. 7. pp. 752021-752027.
@article{ba2e729c3f12400d8555ec2cb487d665,
title = "Resonant photoemission of Ga1-xMnxAs at the Mn L edge",
abstract = "Ga1-xMnxAs, x = 0.043, has been grown ex situ on GaAs(100) by low-temperature molecular-beam epitaxy. On the reprepared p(1 x 1) surface, resonant photoemission of the valence band shows a 20-fold enhancement of the Mn 3d contribution at the L3 edge. The difference spectrum is similar to our previously obtained resonant photoemission at the Mn M edge, in particular a strong satellite appears and no clear Fermi edge ruling out strong Mn 3d weight at the valence-band maximum. The x-ray absorption lineshape differs from previous publications. Our calculation based on a configuration-interaction cluster model reproduces the x-ray absorption and the L3 on-resonance photoemission spectrum for model parameters Δ, Udd, and (pdσ) consistent with our previous work and shows the same spectral shape on and off resonance thus rendering resonant photoemission measured at the L3 edge representative of the Mn 3d contribution. At the same time, the results are more bulk sensitive due to a probing depth about twice as large as for photoemission at the Mn M edge. The confirmation of our previous results obtained at the M edge calls recent photoemission results into question which report the absence of the satellite and good agreement with local-density theory.",
author = "O. Rader and C. Pampuch and Shikin, {A. M.} and W. Gudat and J. Okabayashi and Takashi Mizokawa and A. Fujimori and T. Hayashi and M. Tanaka and A. Tanaka and A. Kimura",
year = "2004",
month = "2",
language = "English",
volume = "69",
pages = "752021--752027",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Resonant photoemission of Ga1-xMnxAs at the Mn L edge

AU - Rader, O.

AU - Pampuch, C.

AU - Shikin, A. M.

AU - Gudat, W.

AU - Okabayashi, J.

AU - Mizokawa, Takashi

AU - Fujimori, A.

AU - Hayashi, T.

AU - Tanaka, M.

AU - Tanaka, A.

AU - Kimura, A.

PY - 2004/2

Y1 - 2004/2

N2 - Ga1-xMnxAs, x = 0.043, has been grown ex situ on GaAs(100) by low-temperature molecular-beam epitaxy. On the reprepared p(1 x 1) surface, resonant photoemission of the valence band shows a 20-fold enhancement of the Mn 3d contribution at the L3 edge. The difference spectrum is similar to our previously obtained resonant photoemission at the Mn M edge, in particular a strong satellite appears and no clear Fermi edge ruling out strong Mn 3d weight at the valence-band maximum. The x-ray absorption lineshape differs from previous publications. Our calculation based on a configuration-interaction cluster model reproduces the x-ray absorption and the L3 on-resonance photoemission spectrum for model parameters Δ, Udd, and (pdσ) consistent with our previous work and shows the same spectral shape on and off resonance thus rendering resonant photoemission measured at the L3 edge representative of the Mn 3d contribution. At the same time, the results are more bulk sensitive due to a probing depth about twice as large as for photoemission at the Mn M edge. The confirmation of our previous results obtained at the M edge calls recent photoemission results into question which report the absence of the satellite and good agreement with local-density theory.

AB - Ga1-xMnxAs, x = 0.043, has been grown ex situ on GaAs(100) by low-temperature molecular-beam epitaxy. On the reprepared p(1 x 1) surface, resonant photoemission of the valence band shows a 20-fold enhancement of the Mn 3d contribution at the L3 edge. The difference spectrum is similar to our previously obtained resonant photoemission at the Mn M edge, in particular a strong satellite appears and no clear Fermi edge ruling out strong Mn 3d weight at the valence-band maximum. The x-ray absorption lineshape differs from previous publications. Our calculation based on a configuration-interaction cluster model reproduces the x-ray absorption and the L3 on-resonance photoemission spectrum for model parameters Δ, Udd, and (pdσ) consistent with our previous work and shows the same spectral shape on and off resonance thus rendering resonant photoemission measured at the L3 edge representative of the Mn 3d contribution. At the same time, the results are more bulk sensitive due to a probing depth about twice as large as for photoemission at the Mn M edge. The confirmation of our previous results obtained at the M edge calls recent photoemission results into question which report the absence of the satellite and good agreement with local-density theory.

UR - http://www.scopus.com/inward/record.url?scp=12144287558&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=12144287558&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:12144287558

VL - 69

SP - 752021

EP - 752027

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 7

M1 - 075202

ER -