Resonant-tunneling triangular-barrier optoelectronic switch by gas source molecular beam epitaxy

H. Sakata, Katsuyuki Utaka, Yuichi Matsushima

Research output: Contribution to journalArticle

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Abstract

We report a novel optical bistable device, resonant-tunneling triangular-barrier optoelectronic switch (R-TOPS), which consists of a double-barrier resonant-tunneling diode (DB-RTD) and a triangular-barrier phototransistor (TBP), grown by gas source molecular beam epitaxy (GSMBE). First, we studied the potential of the GSMBE to grow a DB-RTD and a TBP. The DB-RTD with In0.53Ga0.47As(well)/AlAs(barrier) exhibited clear negative differential resistance (NDR). Interfaces between In0.53Ga0.47As and AlAs in the DB-RTD were of good quality without dislocations in spite of the strained AlAs layers. On the other hand, the TBP with n+-i-δp+-i-n+ structure composed of In0.53Ga0.47As/In0.52Al0.48As layers was fabricated on InP, which was the first demonstration of a TBP at 1 μm wavelength range operation to our knowledge. On these basis, we fabricated the R-TOPS devices. Sharp NDR with clear bistability was successfully observed, and its characteristics were dependent on optical input power. Bistability was observed in the relation between input-light power and output-current. By connecting the device to a laser diode, clear optical bistability and sharp optical NDR property with high contrast and at low input-light power were also demonstrated. We found that both the TBP and the DB-RTD worked well in the R-TOPS grown by GSMBE.

Original languageEnglish
Pages (from-to)1389-1394
Number of pages6
JournalJournal of Crystal Growth
Volume150
Issue number1 -4 pt 2
Publication statusPublished - 1995 May 1
Externally publishedYes

Fingerprint

Gas source molecular beam epitaxy
Phototransistors
Resonant tunneling diodes
Resonant tunneling
resonant tunneling
Optoelectronic devices
molecular beam epitaxy
switches
Switches
gases
phototransistors
resonant tunneling diodes
Optical bistability
Semiconductor lasers
Demonstrations
Wavelength
optical bistability

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Resonant-tunneling triangular-barrier optoelectronic switch by gas source molecular beam epitaxy. / Sakata, H.; Utaka, Katsuyuki; Matsushima, Yuichi.

In: Journal of Crystal Growth, Vol. 150, No. 1 -4 pt 2, 01.05.1995, p. 1389-1394.

Research output: Contribution to journalArticle

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