Response calculation of a stacked CdZnTe detector for 16N γ-ray measurement

H. Nishizawa, Hiroshi Inujima, T. Usami, H. Fujiwara, H. Nakamura

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A stacked CdZnTe semiconductor detector, which is able to detect the 6.13 MeV γ-rays from 16N, was prototyped and the response calculation was carried out by a Monte-Carlo simulation. The detector response was simulated by using the electron and photon transport code, EGS4 and taking into account the carrier trapping phenomena. The results of the response calculation agreed with the experimental data from the checking source of 137Cs and 60Co. The prototype's response and sensitivity to 16N were calculated by simulating an incident energy of 6.13 MeV. The source spectra were unfolded with the detector's response function obtained by simulation, and it indicated that the incident γ-ray energy and its intensity ratio was identified. We have acquired the potential to measure the γ-ray energy in the high energy region about 6 MeV with the stacked CdZnTe detector.

Original languageEnglish
Pages (from-to)268-274
Number of pages7
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume463
Issue number1-2
DOIs
Publication statusPublished - 2001 May 1
Externally publishedYes

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rays
Detectors
detectors
Semiconductor detectors
Photons
energy
Electrons
simulation
trapping
prototypes
sensitivity
photons
electrons
Monte Carlo simulation

Keywords

  • Gamma spectroscopy
  • Monte-Carlo simulation
  • Solid-state detector
  • Stack structure
  • Unfolding

ASJC Scopus subject areas

  • Instrumentation
  • Nuclear and High Energy Physics

Cite this

Response calculation of a stacked CdZnTe detector for 16N γ-ray measurement. / Nishizawa, H.; Inujima, Hiroshi; Usami, T.; Fujiwara, H.; Nakamura, H.

In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 463, No. 1-2, 01.05.2001, p. 268-274.

Research output: Contribution to journalArticle

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AU - Nakamura, H.

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AB - A stacked CdZnTe semiconductor detector, which is able to detect the 6.13 MeV γ-rays from 16N, was prototyped and the response calculation was carried out by a Monte-Carlo simulation. The detector response was simulated by using the electron and photon transport code, EGS4 and taking into account the carrier trapping phenomena. The results of the response calculation agreed with the experimental data from the checking source of 137Cs and 60Co. The prototype's response and sensitivity to 16N were calculated by simulating an incident energy of 6.13 MeV. The source spectra were unfolded with the detector's response function obtained by simulation, and it indicated that the incident γ-ray energy and its intensity ratio was identified. We have acquired the potential to measure the γ-ray energy in the high energy region about 6 MeV with the stacked CdZnTe detector.

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