Restructuring of memory hierarchy in computing system with spintronics-based technologies

Tetsuo Endoh, Takashi Ohsawa, Hiroki Koike, Takahiro Hanyu, Hideo Ohno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

29 Citations (Scopus)

Abstract

The restructuring of today's computer memory hierarchies that are caught in a dilemma between performance gain and power reduction is one of the most promising ways to making the computers much more efficient with much less power. To this end, several possibilities of using NV memories and NV logic with spin-transfer-torque magnetic tunnel junction (STT-MTJ) as levels in new hierarchies are discussed. A new NV-SRAM cell consisting of four transistors and two MTJs (4T-2MTJ) is shown to be a promising candidate for future NV-cache memories. For NV-main memories, we propose a PFET-based 1T-1MTJ cell combined with a new sense amplifier (S/A). A new NV-latch that can be constructed in flip-flops of synchronous core circuits is proposed and the world's fastest 600MHz operation is experimentally demonstrated.

Original languageEnglish
Title of host publication2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers
Pages89-90
Number of pages2
DOIs
Publication statusPublished - 2012 Sep 27
Event2012 Symposium on VLSI Technology, VLSIT 2012 - Honolulu, HI, United States
Duration: 2012 Jun 122012 Jun 14

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2012 Symposium on VLSI Technology, VLSIT 2012
CountryUnited States
CityHonolulu, HI
Period12/6/1212/6/14

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Endoh, T., Ohsawa, T., Koike, H., Hanyu, T., & Ohno, H. (2012). Restructuring of memory hierarchy in computing system with spintronics-based technologies. In 2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers (pp. 89-90). [6242475] (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSIT.2012.6242475