Reverse-mode single ion beam induced charge (R-mode SIBIC) imaging for the test of total dose effects in n-ch metal-oxide-semiconductor field-effect transistor (MOSFET)

Meishoku Koh, Ken Ichi Hara, Katsuyuki Horita, Bungo Shigeta, Takashi Matsukawa, Atsushi Kishida, Takashi Tanii, Makoto Goto, Iwao Ohdomari

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

To achieve quantitative analysis of site-dependent total dose effects in metal-oxide-semiconductor field-effect transistors (MOSFETs), a new imaging technique designated as the reverse-mode single ion beam induced charge (R-mode SIBIC) imaging for sample positioning combined with accurate ion counting has been developed using the single-ion microprobe. With only five He single ions per pixel, we have succeeded in obtaining images of n-ch MOSFET and n-type Si regions fabricated on a p-well without any degradation of device characteristics. The R- mode SIBIC imaging has made it possible to count exactly the number of ions incident upon the MOSFET during radiation hardness tests.

Original languageEnglish
Pages (from-to)L962-L965
JournalJapanese journal of applied physics
Volume33
Issue number7
DOIs
Publication statusPublished - 1994 Jul

Keywords

  • MOSFET
  • R-mode SIBIC imaging
  • SIBIC imaging
  • Single-ion microprobe
  • Total dose effects

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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