Reverse-mode single ion beam induced charge (R-mode SIBIC) imaging for the test of total dose effects in n-ch metal-oxide-semiconductor field-effect transistor (MOSFET)

Meishoku Koh, Ken ichi Hara, Katsuyuki Horita, Bungo Shigeta, Takashi Matsukawa, Atsushi Kishida, Takashi Tanii, Makoto Goto, Iwao Ohdomari

    Research output: Contribution to journalArticle

    7 Citations (Scopus)

    Abstract

    To achieve quantitative analysis of site-dependent total dose effects in metal-oxide-semiconductor field-effect transistors (MOSFETs), a new imaging technique designated as the reverse-mode single ion beam induced charge (R-mode SIBIC) imaging for sample positioning combined with accurate ion counting has been developed using the single-ion microprobe. With only five He single ions per pixel, we have succeeded in obtaining images of n-ch MOSFET and n-type Si regions fabricated on a p-well without any degradation of device characteristics. The R-mode SIBIC imaging has made it possible to count exactly the number of ions incident upon the MOSFET during radiation hardness tests.

    Original languageEnglish
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume33
    Issue number7 A
    Publication statusPublished - 1994 Jul 1

    Fingerprint

    MOSFET devices
    metal oxide semiconductors
    Ion beams
    field effect transistors
    ion beams
    Imaging techniques
    dosage
    Ions
    ions
    hardness tests
    imaging techniques
    quantitative analysis
    positioning
    counting
    Pixels
    Hardness
    pixels
    degradation
    Radiation
    Degradation

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Reverse-mode single ion beam induced charge (R-mode SIBIC) imaging for the test of total dose effects in n-ch metal-oxide-semiconductor field-effect transistor (MOSFET). / Koh, Meishoku; Hara, Ken ichi; Horita, Katsuyuki; Shigeta, Bungo; Matsukawa, Takashi; Kishida, Atsushi; Tanii, Takashi; Goto, Makoto; Ohdomari, Iwao.

    In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 33, No. 7 A, 01.07.1994.

    Research output: Contribution to journalArticle

    Koh, Meishoku ; Hara, Ken ichi ; Horita, Katsuyuki ; Shigeta, Bungo ; Matsukawa, Takashi ; Kishida, Atsushi ; Tanii, Takashi ; Goto, Makoto ; Ohdomari, Iwao. / Reverse-mode single ion beam induced charge (R-mode SIBIC) imaging for the test of total dose effects in n-ch metal-oxide-semiconductor field-effect transistor (MOSFET). In: Japanese Journal of Applied Physics, Part 2: Letters. 1994 ; Vol. 33, No. 7 A.
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    abstract = "To achieve quantitative analysis of site-dependent total dose effects in metal-oxide-semiconductor field-effect transistors (MOSFETs), a new imaging technique designated as the reverse-mode single ion beam induced charge (R-mode SIBIC) imaging for sample positioning combined with accurate ion counting has been developed using the single-ion microprobe. With only five He single ions per pixel, we have succeeded in obtaining images of n-ch MOSFET and n-type Si regions fabricated on a p-well without any degradation of device characteristics. The R-mode SIBIC imaging has made it possible to count exactly the number of ions incident upon the MOSFET during radiation hardness tests.",
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    AU - Hara, Ken ichi

    AU - Horita, Katsuyuki

    AU - Shigeta, Bungo

    AU - Matsukawa, Takashi

    AU - Kishida, Atsushi

    AU - Tanii, Takashi

    AU - Goto, Makoto

    AU - Ohdomari, Iwao

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