Revisiting room-temperature 1.54 μm photoluminescence of ErOx centers in silicon at extremely low concentration

Enrico Prati, Michele Celebrano, Lavinia Ghirardini, Paolo Biagioni, Marco Finazzi, Yasuo Shimizu, Yuan Tu, Koji Inoue, Yasuyoshi Nagai, Takahiro Shinada, Yuki Chiba, Ayman Abdelghafar, Maasa Yano, Takashi Tanii

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)

    Abstract

    Luminescence of erbium in silicon has been intensively explored in the past in the high power emission regime, but its employment for manufacturability of active components for silicon photonics proved unfeasible. We explore the room-temperature photoluminescence (PL) at the telecomm wavelength of very low implantation doses of ErOx in Si for accessing few photon regime towards single photon emission. We achieve countable photon regime and we assess the lower-bound number of detectable emission centers by micron scale implanted dots, whose emission is collected by an inverted confocal microscope.

    Original languageEnglish
    Title of host publication2017 Silicon Nanoelectronics Workshop, SNW 2017
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages105-106
    Number of pages2
    Volume2017-January
    ISBN (Electronic)9784863486478
    DOIs
    Publication statusPublished - 2017 Dec 29
    Event22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan
    Duration: 2017 Jun 42017 Jun 5

    Other

    Other22nd Silicon Nanoelectronics Workshop, SNW 2017
    CountryJapan
    CityKyoto
    Period17/6/417/6/5

    Fingerprint

    Silicon
    Photoluminescence
    Photons
    Erbium
    Temperature
    Photonics
    Dosimetry
    Luminescence
    Microscopes
    Wavelength

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

    Cite this

    Prati, E., Celebrano, M., Ghirardini, L., Biagioni, P., Finazzi, M., Shimizu, Y., ... Tanii, T. (2017). Revisiting room-temperature 1.54 μm photoluminescence of ErOx centers in silicon at extremely low concentration. In 2017 Silicon Nanoelectronics Workshop, SNW 2017 (Vol. 2017-January, pp. 105-106). [8242319] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SNW.2017.8242319

    Revisiting room-temperature 1.54 μm photoluminescence of ErOx centers in silicon at extremely low concentration. / Prati, Enrico; Celebrano, Michele; Ghirardini, Lavinia; Biagioni, Paolo; Finazzi, Marco; Shimizu, Yasuo; Tu, Yuan; Inoue, Koji; Nagai, Yasuyoshi; Shinada, Takahiro; Chiba, Yuki; Abdelghafar, Ayman; Yano, Maasa; Tanii, Takashi.

    2017 Silicon Nanoelectronics Workshop, SNW 2017. Vol. 2017-January Institute of Electrical and Electronics Engineers Inc., 2017. p. 105-106 8242319.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Prati, E, Celebrano, M, Ghirardini, L, Biagioni, P, Finazzi, M, Shimizu, Y, Tu, Y, Inoue, K, Nagai, Y, Shinada, T, Chiba, Y, Abdelghafar, A, Yano, M & Tanii, T 2017, Revisiting room-temperature 1.54 μm photoluminescence of ErOx centers in silicon at extremely low concentration. in 2017 Silicon Nanoelectronics Workshop, SNW 2017. vol. 2017-January, 8242319, Institute of Electrical and Electronics Engineers Inc., pp. 105-106, 22nd Silicon Nanoelectronics Workshop, SNW 2017, Kyoto, Japan, 17/6/4. https://doi.org/10.23919/SNW.2017.8242319
    Prati E, Celebrano M, Ghirardini L, Biagioni P, Finazzi M, Shimizu Y et al. Revisiting room-temperature 1.54 μm photoluminescence of ErOx centers in silicon at extremely low concentration. In 2017 Silicon Nanoelectronics Workshop, SNW 2017. Vol. 2017-January. Institute of Electrical and Electronics Engineers Inc. 2017. p. 105-106. 8242319 https://doi.org/10.23919/SNW.2017.8242319
    Prati, Enrico ; Celebrano, Michele ; Ghirardini, Lavinia ; Biagioni, Paolo ; Finazzi, Marco ; Shimizu, Yasuo ; Tu, Yuan ; Inoue, Koji ; Nagai, Yasuyoshi ; Shinada, Takahiro ; Chiba, Yuki ; Abdelghafar, Ayman ; Yano, Maasa ; Tanii, Takashi. / Revisiting room-temperature 1.54 μm photoluminescence of ErOx centers in silicon at extremely low concentration. 2017 Silicon Nanoelectronics Workshop, SNW 2017. Vol. 2017-January Institute of Electrical and Electronics Engineers Inc., 2017. pp. 105-106
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    abstract = "Luminescence of erbium in silicon has been intensively explored in the past in the high power emission regime, but its employment for manufacturability of active components for silicon photonics proved unfeasible. We explore the room-temperature photoluminescence (PL) at the telecomm wavelength of very low implantation doses of ErOx in Si for accessing few photon regime towards single photon emission. We achieve countable photon regime and we assess the lower-bound number of detectable emission centers by micron scale implanted dots, whose emission is collected by an inverted confocal microscope.",
    author = "Enrico Prati and Michele Celebrano and Lavinia Ghirardini and Paolo Biagioni and Marco Finazzi and Yasuo Shimizu and Yuan Tu and Koji Inoue and Yasuyoshi Nagai and Takahiro Shinada and Yuki Chiba and Ayman Abdelghafar and Maasa Yano and Takashi Tanii",
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    AU - Prati, Enrico

    AU - Celebrano, Michele

    AU - Ghirardini, Lavinia

    AU - Biagioni, Paolo

    AU - Finazzi, Marco

    AU - Shimizu, Yasuo

    AU - Tu, Yuan

    AU - Inoue, Koji

    AU - Nagai, Yasuyoshi

    AU - Shinada, Takahiro

    AU - Chiba, Yuki

    AU - Abdelghafar, Ayman

    AU - Yano, Maasa

    AU - Tanii, Takashi

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