Revisiting room-temperature 1.54 μm photoluminescence of ErOx centers in silicon at extremely low concentration

Enrico Prati, Michele Celebrano, Lavinia Ghirardini, Paolo Biagioni, Marco Finazzi, Yasuo Shimizu, Yuan Tu, Koji Inoue, Yasuyoshi Nagai, Takahiro Shinada, Yuki Chiba, Ayman Abdelghafar, Maasa Yano, Takashi Tanii

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Luminescence of erbium in silicon has been intensively explored in the past in the high power emission regime, but its employment for manufacturability of active components for silicon photonics proved unfeasible. We explore the room-temperature photoluminescence (PL) at the telecomm wavelength of very low implantation doses of ErOx in Si for accessing few photon regime towards single photon emission. We achieve countable photon regime and we assess the lower-bound number of detectable emission centers by micron scale implanted dots, whose emission is collected by an inverted confocal microscope.

Original languageEnglish
Title of host publication2017 Silicon Nanoelectronics Workshop, SNW 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages105-106
Number of pages2
ISBN (Electronic)9784863486478
DOIs
Publication statusPublished - 2017 Dec 29
Event22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan
Duration: 2017 Jun 42017 Jun 5

Publication series

Name2017 Silicon Nanoelectronics Workshop, SNW 2017
Volume2017-January

Other

Other22nd Silicon Nanoelectronics Workshop, SNW 2017
Country/TerritoryJapan
CityKyoto
Period17/6/417/6/5

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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