RF and DC characteristics in Al 2O 3/Si 3N 4 insulated-gate AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure

Narihiko Maeda, Takashi Makimura, Takashi Maruyama, Chengxin Wang, Masanobu Hiroki, Haruki Yokoyama, Toshiki Makimoto, Takashi Kobayashi, Takatomo Enoki

Research output: Contribution to journalArticle

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Abstract

Al 2O 3/Si 3N 4 insulated-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) have been fabricated, where the regrown ohmic structure was incorporated to reduce the contact resistance. Excellent DC and RF characteristics have been obtained together with the low gate leakage current as the result of employing the metal-insulator-semiconductor (MIS) structure. An HFET with a gate length (L g) of 0.1 μm has exhibited a drain current density (I d) and a transconductance (g m) of 1.30 A/mm and 293 mS/mm, respectively, with a reduced contact resistance of 0.3 Ω mm. The gate leakage current (I g) was as low as 1 × 10 -8 A/mm in the reverse vias region, and only 4 × 10 -5 A/mm even at a forward bias voltage of +3 V. In this device, the cutoff frequency (f T) and maximum oscillation frequency (f max) were estimated to be 70 and 90 GHz, respectively. In the HFETs with longer L g of 0.7 and 1.0 μm,f T and f max were 20 and 48 GHz (L g = 0.7 μm), respectively; and 14 and 35 GHz (L g = 1.0 μm), respectively. Thus, the Al 2O 3/Si 3N 4 MIS HFETs have proved to also exhibit excellent RF characteristics.

Original languageEnglish
Pages (from-to)1861-1865
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume203
Issue number7
DOIs
Publication statusPublished - 2006 May
Externally publishedYes

Fingerprint

High electron mobility transistors
field effect transistors
direct current
MIS (semiconductors)
Contact resistance
contact resistance
Leakage currents
leakage
Metals
Semiconductor materials
Drain current
Cutoff frequency
Transconductance
transconductance
Bias voltage
Current density
cut-off
current density
oscillations
aluminum gallium nitride

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

RF and DC characteristics in Al 2O 3/Si 3N 4 insulated-gate AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure. / Maeda, Narihiko; Makimura, Takashi; Maruyama, Takashi; Wang, Chengxin; Hiroki, Masanobu; Yokoyama, Haruki; Makimoto, Toshiki; Kobayashi, Takashi; Enoki, Takatomo.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 203, No. 7, 05.2006, p. 1861-1865.

Research output: Contribution to journalArticle

Maeda, Narihiko ; Makimura, Takashi ; Maruyama, Takashi ; Wang, Chengxin ; Hiroki, Masanobu ; Yokoyama, Haruki ; Makimoto, Toshiki ; Kobayashi, Takashi ; Enoki, Takatomo. / RF and DC characteristics in Al 2O 3/Si 3N 4 insulated-gate AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure. In: Physica Status Solidi (A) Applications and Materials Science. 2006 ; Vol. 203, No. 7. pp. 1861-1865.
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