RF and DC characteristics in Al 2O 3/Si 3N 4 insulated-gate AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure

Narihiko Maeda*, Takashi Makimura, Takashi Maruyama, Chengxin Wang, Masanobu Hiroki, Haruki Yokoyama, Toshiki Makimoto, Takashi Kobayashi, Takatomo Enoki

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Fingerprint

Dive into the research topics of 'RF and DC characteristics in Al 2O 3/Si 3N 4 insulated-gate AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure'. Together they form a unique fingerprint.

Engineering & Materials Science

Physics & Astronomy

Chemical Compounds