RF diamond MISFETs using surface accumulation layer

K. Hirama, T. Koshiba, K. Yohara, H. Takayanagi, S. Yamauchi, M. Satoh, H. Kawarada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Diamond metal-insulator-semiconductor field-effect-transistors (MISFETs) utilizing a hole accumulation layer have been fabricated on a hydrogen-terminated (H-terminated) diamond surface. The highest cut-off frequency (fT) of 30 GHz and the maximum frequency of oscillation (fmax) of 60 GHz were obtained in the 0.35 μm gate diamond MISFET. RF power operations of diamond MISFETs were demonstrated for the first time. In RF power operation, the high power density of 2.14 W/mm was obtained at 1 GHz.

Original languageEnglish
Title of host publicationProceedings of the 18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06
Publication statusPublished - 2006 Dec 1
Event18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06 - Naples, Italy
Duration: 2006 Jun 42006 Jun 8

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2006
ISSN (Print)1063-6854

Conference

Conference18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06
CountryItaly
CityNaples
Period06/6/406/6/8

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'RF diamond MISFETs using surface accumulation layer'. Together they form a unique fingerprint.

Cite this