RF diamond MISFETs using surface accumulation layer

K. Hirama, T. Koshiba, K. Yohara, H. Takayanagi, S. Yamauchi, M. Satoh, Hiroshi Kawarada

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    5 Citations (Scopus)

    Abstract

    Diamond metal-insulator-semiconductor field-effect-transistors (MISFETs) utilizing a hole accumulation layer have been fabricated on a hydrogen-terminated (H-terminated) diamond surface. The highest cut-off frequency (fT) of 30 GHz and the maximum frequency of oscillation (fmax) of 60 GHz were obtained in the 0.35 μm gate diamond MISFET. RF power operations of diamond MISFETs were demonstrated for the first time. In RF power operation, the high power density of 2.14 W/mm was obtained at 1 GHz.

    Original languageEnglish
    Title of host publicationProceedings of the International Symposium on Power Semiconductor Devices and ICs
    Volume2006
    Publication statusPublished - 2006
    Event18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06 - Naples
    Duration: 2006 Jun 42006 Jun 8

    Other

    Other18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06
    CityNaples
    Period06/6/406/6/8

    Fingerprint

    MISFET devices
    Diamonds
    Cutoff frequency
    Hydrogen

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Hirama, K., Koshiba, T., Yohara, K., Takayanagi, H., Yamauchi, S., Satoh, M., & Kawarada, H. (2006). RF diamond MISFETs using surface accumulation layer. In Proceedings of the International Symposium on Power Semiconductor Devices and ICs (Vol. 2006). [1666073]

    RF diamond MISFETs using surface accumulation layer. / Hirama, K.; Koshiba, T.; Yohara, K.; Takayanagi, H.; Yamauchi, S.; Satoh, M.; Kawarada, Hiroshi.

    Proceedings of the International Symposium on Power Semiconductor Devices and ICs. Vol. 2006 2006. 1666073.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Hirama, K, Koshiba, T, Yohara, K, Takayanagi, H, Yamauchi, S, Satoh, M & Kawarada, H 2006, RF diamond MISFETs using surface accumulation layer. in Proceedings of the International Symposium on Power Semiconductor Devices and ICs. vol. 2006, 1666073, 18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06, Naples, 06/6/4.
    Hirama K, Koshiba T, Yohara K, Takayanagi H, Yamauchi S, Satoh M et al. RF diamond MISFETs using surface accumulation layer. In Proceedings of the International Symposium on Power Semiconductor Devices and ICs. Vol. 2006. 2006. 1666073
    Hirama, K. ; Koshiba, T. ; Yohara, K. ; Takayanagi, H. ; Yamauchi, S. ; Satoh, M. ; Kawarada, Hiroshi. / RF diamond MISFETs using surface accumulation layer. Proceedings of the International Symposium on Power Semiconductor Devices and ICs. Vol. 2006 2006.
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    AU - Koshiba, T.

    AU - Yohara, K.

    AU - Takayanagi, H.

    AU - Yamauchi, S.

    AU - Satoh, M.

    AU - Kawarada, Hiroshi

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    AB - Diamond metal-insulator-semiconductor field-effect-transistors (MISFETs) utilizing a hole accumulation layer have been fabricated on a hydrogen-terminated (H-terminated) diamond surface. The highest cut-off frequency (fT) of 30 GHz and the maximum frequency of oscillation (fmax) of 60 GHz were obtained in the 0.35 μm gate diamond MISFET. RF power operations of diamond MISFETs were demonstrated for the first time. In RF power operation, the high power density of 2.14 W/mm was obtained at 1 GHz.

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