RF diamond transistors: Current status and future prospects

Hitoshi Umezawa; Kazuyuki Hirama; Tatsuya Arai; Hideo Hata; Hidenori Takayanagi; Toru Koshiba; Keiichiro Yohara; Soichi Mejima; Mitsuya Satoh; Kwang Soup Song; Hiroshi Kawarada

doi:10.1143/JJAP.44.7789

RF diamond transistors: Current status and future prospects

Hitoshi Umezawa^*, Kazuyuki Hirama, Tatsuya Arai, Hideo Hata, Hidenori Takayanagi, Toru Koshiba, Keiichiro Yohara, Soichi Mejima, Mitsuya Satoh, Kwang Soup Song, Hiroshi Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

RF diamond transistors have been developed on a hydrogen-terminated surface conductive layer. f_T and f_max of 23 and 25 GHz, respectively, have been achieved in a diamond MISFET with a 0.2 μm gate length. Utilizing de-embedding and small-signal equivalent circuit analysis, parasitic components are extracted. The intrinsic f_T and f _max of the 0.2-μm-gate diamond MISFET are estimated to be 26 and 36 GHz, respectively. In this report, some of the challenging steps in device fabrication processes such as the development of a low-resistivity ohmic layer, a high-quality gate insulator and acceptor density control technology, toward high-power and high-frequency diamond transistors with high reliability, are introduced.

Original language	English
Pages (from-to)	7789-7794
Number of pages	6
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	44
Issue number	11
DOIs	https://doi.org/10.1143/JJAP.44.7789
Publication status	Published - 2005 Nov 9

Keywords

Cut-off frequency
Diamond
Field-effect transistors
Hydrogen-terminated surface conductive layer
Maximum frequency of oscillation
Parasitic components

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "RF diamond transistors: Current status and future prospects",

abstract = "RF diamond transistors have been developed on a hydrogen-terminated surface conductive layer. fT and fmax of 23 and 25 GHz, respectively, have been achieved in a diamond MISFET with a 0.2 μm gate length. Utilizing de-embedding and small-signal equivalent circuit analysis, parasitic components are extracted. The intrinsic fT and f max of the 0.2-μm-gate diamond MISFET are estimated to be 26 and 36 GHz, respectively. In this report, some of the challenging steps in device fabrication processes such as the development of a low-resistivity ohmic layer, a high-quality gate insulator and acceptor density control technology, toward high-power and high-frequency diamond transistors with high reliability, are introduced.",

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T1 - RF diamond transistors

T2 - Current status and future prospects

AU - Umezawa, Hitoshi

AU - Hirama, Kazuyuki

AU - Arai, Tatsuya

AU - Hata, Hideo

AU - Takayanagi, Hidenori

AU - Koshiba, Toru

AU - Yohara, Keiichiro

AU - Mejima, Soichi

AU - Satoh, Mitsuya

AU - Song, Kwang Soup

AU - Kawarada, Hiroshi

PY - 2005/11/9

Y1 - 2005/11/9

N2 - RF diamond transistors have been developed on a hydrogen-terminated surface conductive layer. fT and fmax of 23 and 25 GHz, respectively, have been achieved in a diamond MISFET with a 0.2 μm gate length. Utilizing de-embedding and small-signal equivalent circuit analysis, parasitic components are extracted. The intrinsic fT and f max of the 0.2-μm-gate diamond MISFET are estimated to be 26 and 36 GHz, respectively. In this report, some of the challenging steps in device fabrication processes such as the development of a low-resistivity ohmic layer, a high-quality gate insulator and acceptor density control technology, toward high-power and high-frequency diamond transistors with high reliability, are introduced.

AB - RF diamond transistors have been developed on a hydrogen-terminated surface conductive layer. fT and fmax of 23 and 25 GHz, respectively, have been achieved in a diamond MISFET with a 0.2 μm gate length. Utilizing de-embedding and small-signal equivalent circuit analysis, parasitic components are extracted. The intrinsic fT and f max of the 0.2-μm-gate diamond MISFET are estimated to be 26 and 36 GHz, respectively. In this report, some of the challenging steps in device fabrication processes such as the development of a low-resistivity ohmic layer, a high-quality gate insulator and acceptor density control technology, toward high-power and high-frequency diamond transistors with high reliability, are introduced.

KW - Cut-off frequency

KW - Diamond

KW - Field-effect transistors

KW - Hydrogen-terminated surface conductive layer

KW - Maximum frequency of oscillation

KW - Parasitic components

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RF diamond transistors: Current status and future prospects

Abstract

Keywords

ASJC Scopus subject areas

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