RF diamond transistors: Current status and future prospects

Hitoshi Umezawa; Kazuyuki Hirama; Tatsuya Arai; Hideo Hata; Hidenori Takayanagi; Toru Koshiba; Keiichiro Yohara; Soichi Mejima; Mitsuya Satoh; Kwang Soup Song; Hiroshi Kawarada

doi:10.1143/JJAP.44.7789

RF diamond transistors: Current status and future prospects

Hitoshi Umezawa, Kazuyuki Hirama, Tatsuya Arai, Hideo Hata, Hidenori Takayanagi, Toru Koshiba, Keiichiro Yohara, Soichi Mejima, Mitsuya Satoh, Kwang Soup Song, Hiroshi Kawarada

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article

9 Citations (Scopus)

Abstract

RF diamond transistors have been developed on a hydrogen-terminated surface conductive layer. f_T and f_max of 23 and 25 GHz, respectively, have been achieved in a diamond MISFET with a 0.2 μm gate length. Utilizing de-embedding and small-signal equivalent circuit analysis, parasitic components are extracted. The intrinsic f_T and f _max of the 0.2-μm-gate diamond MISFET are estimated to be 26 and 36 GHz, respectively. In this report, some of the challenging steps in device fabrication processes such as the development of a low-resistivity ohmic layer, a high-quality gate insulator and acceptor density control technology, toward high-power and high-frequency diamond transistors with high reliability, are introduced.

Original language	English
Pages (from-to)	7789-7794
Number of pages	6
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	44
Issue number	11
DOIs	https://doi.org/10.1143/JJAP.44.7789
Publication status	Published - 2005 Nov 9

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Keywords

Cut-off frequency
Diamond
Field-effect transistors
Hydrogen-terminated surface conductive layer
Maximum frequency of oscillation
Parasitic components

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Cite this

Umezawa, H., Hirama, K., Arai, T., Hata, H., Takayanagi, H., Koshiba, T., Yohara, K., Mejima, S., Satoh, M., Song, K. S., & Kawarada, H. (2005). RF diamond transistors: Current status and future prospects. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 44(11), 7789-7794. https://doi.org/10.1143/JJAP.44.7789

RF diamond transistors : Current status and future prospects. / Umezawa, Hitoshi; Hirama, Kazuyuki; Arai, Tatsuya; Hata, Hideo; Takayanagi, Hidenori; Koshiba, Toru; Yohara, Keiichiro; Mejima, Soichi; Satoh, Mitsuya; Song, Kwang Soup; Kawarada, Hiroshi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 11, 09.11.2005, p. 7789-7794.

Research output: Contribution to journal › Article

Umezawa, Hitoshi ; Hirama, Kazuyuki ; Arai, Tatsuya ; Hata, Hideo ; Takayanagi, Hidenori ; Koshiba, Toru ; Yohara, Keiichiro ; Mejima, Soichi ; Satoh, Mitsuya ; Song, Kwang Soup ; Kawarada, Hiroshi. / RF diamond transistors : Current status and future prospects. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2005 ; Vol. 44, No. 11. pp. 7789-7794.

@article{cf1eacbf6ab943b2aa96af3e266950cd,

title = "RF diamond transistors: Current status and future prospects",

abstract = "RF diamond transistors have been developed on a hydrogen-terminated surface conductive layer. fT and fmax of 23 and 25 GHz, respectively, have been achieved in a diamond MISFET with a 0.2 μm gate length. Utilizing de-embedding and small-signal equivalent circuit analysis, parasitic components are extracted. The intrinsic fT and f max of the 0.2-μm-gate diamond MISFET are estimated to be 26 and 36 GHz, respectively. In this report, some of the challenging steps in device fabrication processes such as the development of a low-resistivity ohmic layer, a high-quality gate insulator and acceptor density control technology, toward high-power and high-frequency diamond transistors with high reliability, are introduced.",

keywords = "Cut-off frequency, Diamond, Field-effect transistors, Hydrogen-terminated surface conductive layer, Maximum frequency of oscillation, Parasitic components",

author = "Hitoshi Umezawa and Kazuyuki Hirama and Tatsuya Arai and Hideo Hata and Hidenori Takayanagi and Toru Koshiba and Keiichiro Yohara and Soichi Mejima and Mitsuya Satoh and Song, {Kwang Soup} and Hiroshi Kawarada",

year = "2005",

month = nov

day = "9",

doi = "10.1143/JJAP.44.7789",

language = "English",

volume = "44",

pages = "7789--7794",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "11",

}

TY - JOUR

T1 - RF diamond transistors

T2 - Current status and future prospects

AU - Umezawa, Hitoshi

AU - Hirama, Kazuyuki

AU - Arai, Tatsuya

AU - Hata, Hideo

AU - Takayanagi, Hidenori

AU - Koshiba, Toru

AU - Yohara, Keiichiro

AU - Mejima, Soichi

AU - Satoh, Mitsuya

AU - Song, Kwang Soup

AU - Kawarada, Hiroshi

PY - 2005/11/9

Y1 - 2005/11/9

N2 - RF diamond transistors have been developed on a hydrogen-terminated surface conductive layer. fT and fmax of 23 and 25 GHz, respectively, have been achieved in a diamond MISFET with a 0.2 μm gate length. Utilizing de-embedding and small-signal equivalent circuit analysis, parasitic components are extracted. The intrinsic fT and f max of the 0.2-μm-gate diamond MISFET are estimated to be 26 and 36 GHz, respectively. In this report, some of the challenging steps in device fabrication processes such as the development of a low-resistivity ohmic layer, a high-quality gate insulator and acceptor density control technology, toward high-power and high-frequency diamond transistors with high reliability, are introduced.

AB - RF diamond transistors have been developed on a hydrogen-terminated surface conductive layer. fT and fmax of 23 and 25 GHz, respectively, have been achieved in a diamond MISFET with a 0.2 μm gate length. Utilizing de-embedding and small-signal equivalent circuit analysis, parasitic components are extracted. The intrinsic fT and f max of the 0.2-μm-gate diamond MISFET are estimated to be 26 and 36 GHz, respectively. In this report, some of the challenging steps in device fabrication processes such as the development of a low-resistivity ohmic layer, a high-quality gate insulator and acceptor density control technology, toward high-power and high-frequency diamond transistors with high reliability, are introduced.

KW - Cut-off frequency

KW - Diamond

KW - Field-effect transistors

KW - Hydrogen-terminated surface conductive layer

KW - Maximum frequency of oscillation

KW - Parasitic components

UR - http://www.scopus.com/inward/record.url?scp=31644435770&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=31644435770&partnerID=8YFLogxK

U2 - 10.1143/JJAP.44.7789

DO - 10.1143/JJAP.44.7789

M3 - Article

AN - SCOPUS:31644435770

VL - 44

SP - 7789

EP - 7794

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 11

ER -

Access to Document

10.1143/JJAP.44.7789