RF diamond transistors: Current status and future prospects

Hitoshi Umezawa, Kazuyuki Hirama, Tatsuya Arai, Hideo Hata, Hidenori Takayanagi, Toru Koshiba, Keiichiro Yohara, Soichi Mejima, Mitsuya Satoh, Kwang Soup Song, Hiroshi Kawarada

    Research output: Contribution to journal › Article

    9 Citations (Scopus)

    Abstract

    RF diamond transistors have been developed on a hydrogen-terminated surface conductive layer. fT and fmax of 23 and 25 GHz, respectively, have been achieved in a diamond MISFET with a 0.2 μm gate length. Utilizing de-embedding and small-signal equivalent circuit analysis, parasitic components are extracted. The intrinsic fT and f max of the 0.2-μm-gate diamond MISFET are estimated to be 26 and 36 GHz, respectively. In this report, some of the challenging steps in device fabrication processes such as the development of a low-resistivity ohmic layer, a high-quality gate insulator and acceptor density control technology, toward high-power and high-frequency diamond transistors with high reliability, are introduced.

    Original languageEnglish
    Pages (from-to)7789-7794
    Number of pages6
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume44
    Issue number11
    DOIs
    Publication statusPublished - 2005 Nov 9

    Fingerprint

    Diamonds
    Transistors
    transistors
    diamonds
    field effect transistors
    Electric network analysis
    equivalent circuits
    Equivalent circuits
    embedding
    insulators
    Fabrication
    Hydrogen
    fabrication
    electrical resistivity
    hydrogen

    Keywords

    • Cut-off frequency
    • Diamond
    • Field-effect transistors
    • Hydrogen-terminated surface conductive layer
    • Maximum frequency of oscillation
    • Parasitic components

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    RF diamond transistors : Current status and future prospects. / Umezawa, Hitoshi; Hirama, Kazuyuki; Arai, Tatsuya; Hata, Hideo; Takayanagi, Hidenori; Koshiba, Toru; Yohara, Keiichiro; Mejima, Soichi; Satoh, Mitsuya; Song, Kwang Soup; Kawarada, Hiroshi.

    In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 11, 09.11.2005, p. 7789-7794.

    Research output: Contribution to journal › Article

    Umezawa, H, Hirama, K, Arai, T, Hata, H, Takayanagi, H, Koshiba, T, Yohara, K, Mejima, S, Satoh, M, Song, KS & Kawarada, H 2005, 'RF diamond transistors: Current status and future prospects', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 44, no. 11, pp. 7789-7794. https://doi.org/10.1143/JJAP.44.7789
    Umezawa H, Hirama K, Arai T, Hata H, Takayanagi H, Koshiba T et al. RF diamond transistors: Current status and future prospects. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2005 Nov 9;44(11):7789-7794. https://doi.org/10.1143/JJAP.44.7789
    Umezawa, Hitoshi ; Hirama, Kazuyuki ; Arai, Tatsuya ; Hata, Hideo ; Takayanagi, Hidenori ; Koshiba, Toru ; Yohara, Keiichiro ; Mejima, Soichi ; Satoh, Mitsuya ; Song, Kwang Soup ; Kawarada, Hiroshi. / RF diamond transistors : Current status and future prospects. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2005 ; Vol. 44, No. 11. pp. 7789-7794.
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    AU - Takayanagi, Hidenori

    AU - Koshiba, Toru

    AU - Yohara, Keiichiro

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