Abstract
RF diamond transistors have been developed on a hydrogen-terminated surface conductive layer. fT and fmax of 23 and 25 GHz, respectively, have been achieved in a diamond MISFET with a 0.2 μm gate length. Utilizing de-embedding and small-signal equivalent circuit analysis, parasitic components are extracted. The intrinsic fT and f max of the 0.2-μm-gate diamond MISFET are estimated to be 26 and 36 GHz, respectively. In this report, some of the challenging steps in device fabrication processes such as the development of a low-resistivity ohmic layer, a high-quality gate insulator and acceptor density control technology, toward high-power and high-frequency diamond transistors with high reliability, are introduced.
Original language | English |
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Pages (from-to) | 7789-7794 |
Number of pages | 6 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 44 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2005 Nov 9 |
Keywords
- Cut-off frequency
- Diamond
- Field-effect transistors
- Hydrogen-terminated surface conductive layer
- Maximum frequency of oscillation
- Parasitic components
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)