RF diamond transistors: Current status and future prospects

Hitoshi Umezawa, Kazuyuki Hirama, Tatsuya Arai, Hideo Hata, Hidenori Takayanagi, Toru Koshiba, Keiichiro Yohara, Soichi Mejima, Mitsuya Satoh, Kwang Soup Song, Hiroshi Kawarada

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

RF diamond transistors have been developed on a hydrogen-terminated surface conductive layer. fT and fmax of 23 and 25 GHz, respectively, have been achieved in a diamond MISFET with a 0.2 μm gate length. Utilizing de-embedding and small-signal equivalent circuit analysis, parasitic components are extracted. The intrinsic fT and f max of the 0.2-μm-gate diamond MISFET are estimated to be 26 and 36 GHz, respectively. In this report, some of the challenging steps in device fabrication processes such as the development of a low-resistivity ohmic layer, a high-quality gate insulator and acceptor density control technology, toward high-power and high-frequency diamond transistors with high reliability, are introduced.

Original languageEnglish
Pages (from-to)7789-7794
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number11
DOIs
Publication statusPublished - 2005 Nov 9

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Keywords

  • Cut-off frequency
  • Diamond
  • Field-effect transistors
  • Hydrogen-terminated surface conductive layer
  • Maximum frequency of oscillation
  • Parasitic components

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Umezawa, H., Hirama, K., Arai, T., Hata, H., Takayanagi, H., Koshiba, T., Yohara, K., Mejima, S., Satoh, M., Song, K. S., & Kawarada, H. (2005). RF diamond transistors: Current status and future prospects. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 44(11), 7789-7794. https://doi.org/10.1143/JJAP.44.7789