RF performance of diamond metel-semiconductor field-effect transistor at elevated temperatures and analysis of its equivalent circuit

Haitao Ye, Makoto Kasu, Kenji Ueda, Yoshiharu Yamauchi, Narihiko Maeda, Satoshi Sasaki, Toshiki Makimoto

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Temperature dependent DC and RF characteristics of p-type diamond metal-semiconductor field-effect transistors (MESFETs) on hydrogen-terminated surfaces are investigated. The device is thermally stable up to 100°C, because it does not deteriorate at all at higher temperatures. Temperature coefficients of transconductance (gm), drain conductance (g ds). gate-source capacitance (Cgs), gate-drain capacitance (Cgd), cut-off frequency (fT), and maximum drain current (Ids) were obtained from small-signal equivalent circuit analysis. The cut-off frequency (fT) is almost totally independent of temperature. Intrinsic gm, gds, and Cgs decrease with increasing temperature. Cgd is almost totally independent of temperature. The threshold voltage shifts to the negative side with increasing temperature. We propose a band model of an Al-gate contact/ H-terminated diamond to explain the temperature dependence of these components.

Original languageEnglish
Pages (from-to)3609-3613
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number4 B
DOIs
Publication statusPublished - 2006 Apr 25
Externally publishedYes

Fingerprint

Field effect transistors
equivalent circuits
Equivalent circuits
Diamonds
field effect transistors
diamonds
Semiconductor materials
capacitance
Temperature
Capacitance
temperature
Cutoff frequency
cut-off
transconductance
MESFET devices
threshold voltage
Drain current
Transconductance
Electric network analysis
direct current

Keywords

  • Diamond
  • FET
  • RF
  • Temperature coefficient

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

RF performance of diamond metel-semiconductor field-effect transistor at elevated temperatures and analysis of its equivalent circuit. / Ye, Haitao; Kasu, Makoto; Ueda, Kenji; Yamauchi, Yoshiharu; Maeda, Narihiko; Sasaki, Satoshi; Makimoto, Toshiki.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 4 B, 25.04.2006, p. 3609-3613.

Research output: Contribution to journalArticle

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