RF Performance of Diamond Surface-Channel Field-Effect Transistors

Hitoshi Umezawa*, Shingo Miyamoto, Hiroki Matsudaira, Hiroaki Ishizaka, Kwang Soup Song, Minoru Tachiki, Hiroshi Kawarada

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


RF diamond FETs have been realized on a hydrogen-terminated diamond surface conductive layer. By utilizing the self-aligned gate fabrication process which is effective for the reduction of the parasitic resistance, the transconductance of diamond FETs has been greatly improved. Consequently, the high frequency operation of 22 GHz has been realized in 0.2 μm gate diamond MISFETs with a CaF2 gate insulator. This value is the highest in diamond FETs and is comparable to the maximum value of SiC MESFETs at present.

Original languageEnglish
Pages (from-to)1949-1954
Number of pages6
JournalIEICE Transactions on Electronics
Issue number10
Publication statusPublished - 2003 Oct


  • CaF
  • Cut-off frequency
  • Diamond
  • Hydrogen-terminated surface channel
  • Mobility

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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