RF Performance of Diamond Surface-Channel Field-Effect Transistors

Hitoshi Umezawa, Shingo Miyamoto, Hiroki Matsudaira, Hiroaki Ishizaka, Kwang Soup Song, Minoru Tachiki, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    RF diamond FETs have been realized on a hydrogen-terminated diamond surface conductive layer. By utilizing the self-aligned gate fabrication process which is effective for the reduction of the parasitic resistance, the transconductance of diamond FETs has been greatly improved. Consequently, the high frequency operation of 22 GHz has been realized in 0.2 μm gate diamond MISFETs with a CaF2 gate insulator. This value is the highest in diamond FETs and is comparable to the maximum value of SiC MESFETs at present.

    Original languageEnglish
    Pages (from-to)1949-1954
    Number of pages6
    JournalIEICE Transactions on Electronics
    VolumeE86-C
    Issue number10
    Publication statusPublished - 2003 Oct

    Fingerprint

    Diamond
    Field effect transistors
    Diamonds
    Transconductance
    Hydrogen
    Fabrication

    Keywords

    • CaF
    • Cut-off frequency
    • Diamond
    • Hydrogen-terminated surface channel
    • MESFET
    • MISFET
    • Mobility

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

    Cite this

    Umezawa, H., Miyamoto, S., Matsudaira, H., Ishizaka, H., Song, K. S., Tachiki, M., & Kawarada, H. (2003). RF Performance of Diamond Surface-Channel Field-Effect Transistors. IEICE Transactions on Electronics, E86-C(10), 1949-1954.

    RF Performance of Diamond Surface-Channel Field-Effect Transistors. / Umezawa, Hitoshi; Miyamoto, Shingo; Matsudaira, Hiroki; Ishizaka, Hiroaki; Song, Kwang Soup; Tachiki, Minoru; Kawarada, Hiroshi.

    In: IEICE Transactions on Electronics, Vol. E86-C, No. 10, 10.2003, p. 1949-1954.

    Research output: Contribution to journalArticle

    Umezawa, H, Miyamoto, S, Matsudaira, H, Ishizaka, H, Song, KS, Tachiki, M & Kawarada, H 2003, 'RF Performance of Diamond Surface-Channel Field-Effect Transistors', IEICE Transactions on Electronics, vol. E86-C, no. 10, pp. 1949-1954.
    Umezawa H, Miyamoto S, Matsudaira H, Ishizaka H, Song KS, Tachiki M et al. RF Performance of Diamond Surface-Channel Field-Effect Transistors. IEICE Transactions on Electronics. 2003 Oct;E86-C(10):1949-1954.
    Umezawa, Hitoshi ; Miyamoto, Shingo ; Matsudaira, Hiroki ; Ishizaka, Hiroaki ; Song, Kwang Soup ; Tachiki, Minoru ; Kawarada, Hiroshi. / RF Performance of Diamond Surface-Channel Field-Effect Transistors. In: IEICE Transactions on Electronics. 2003 ; Vol. E86-C, No. 10. pp. 1949-1954.
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