RF Performance of Diamond Surface-Channel Field-Effect Transistors

Hitoshi Umezawa; Shingo Miyamoto; Hiroki Matsudaira; Hiroaki Ishizaka; Kwang Soup Song; Minoru Tachiki; Hiroshi Kawarada

RF Performance of Diamond Surface-Channel Field-Effect Transistors

Hitoshi Umezawa^*, Shingo Miyamoto, Hiroki Matsudaira, Hiroaki Ishizaka, Kwang Soup Song, Minoru Tachiki, Hiroshi Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

RF diamond FETs have been realized on a hydrogen-terminated diamond surface conductive layer. By utilizing the self-aligned gate fabrication process which is effective for the reduction of the parasitic resistance, the transconductance of diamond FETs has been greatly improved. Consequently, the high frequency operation of 22 GHz has been realized in 0.2 μm gate diamond MISFETs with a CaF₂ gate insulator. This value is the highest in diamond FETs and is comparable to the maximum value of SiC MESFETs at present.

Original language	English
Pages (from-to)	1949-1954
Number of pages	6
Journal	IEICE Transactions on Electronics
Volume	E86-C
Issue number	10
Publication status	Published - 2003 Oct

Keywords

CaF
Cut-off frequency
Diamond
Hydrogen-terminated surface channel
MESFET
MISFET
Mobility

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "RF Performance of Diamond Surface-Channel Field-Effect Transistors",

abstract = "RF diamond FETs have been realized on a hydrogen-terminated diamond surface conductive layer. By utilizing the self-aligned gate fabrication process which is effective for the reduction of the parasitic resistance, the transconductance of diamond FETs has been greatly improved. Consequently, the high frequency operation of 22 GHz has been realized in 0.2 μm gate diamond MISFETs with a CaF2 gate insulator. This value is the highest in diamond FETs and is comparable to the maximum value of SiC MESFETs at present.",

keywords = "CaF, Cut-off frequency, Diamond, Hydrogen-terminated surface channel, MESFET, MISFET, Mobility",

author = "Hitoshi Umezawa and Shingo Miyamoto and Hiroki Matsudaira and Hiroaki Ishizaka and Song, {Kwang Soup} and Minoru Tachiki and Hiroshi Kawarada",

year = "2003",

month = oct,

language = "English",

volume = "E86-C",

pages = "1949--1954",

journal = "IEICE Transactions on Electronics",

issn = "0916-8524",

publisher = "Maruzen Co., Ltd/Maruzen Kabushikikaisha",

number = "10",

}

TY - JOUR

T1 - RF Performance of Diamond Surface-Channel Field-Effect Transistors

AU - Umezawa, Hitoshi

AU - Miyamoto, Shingo

AU - Matsudaira, Hiroki

AU - Ishizaka, Hiroaki

AU - Song, Kwang Soup

AU - Tachiki, Minoru

AU - Kawarada, Hiroshi

PY - 2003/10

Y1 - 2003/10

N2 - RF diamond FETs have been realized on a hydrogen-terminated diamond surface conductive layer. By utilizing the self-aligned gate fabrication process which is effective for the reduction of the parasitic resistance, the transconductance of diamond FETs has been greatly improved. Consequently, the high frequency operation of 22 GHz has been realized in 0.2 μm gate diamond MISFETs with a CaF2 gate insulator. This value is the highest in diamond FETs and is comparable to the maximum value of SiC MESFETs at present.

AB - RF diamond FETs have been realized on a hydrogen-terminated diamond surface conductive layer. By utilizing the self-aligned gate fabrication process which is effective for the reduction of the parasitic resistance, the transconductance of diamond FETs has been greatly improved. Consequently, the high frequency operation of 22 GHz has been realized in 0.2 μm gate diamond MISFETs with a CaF2 gate insulator. This value is the highest in diamond FETs and is comparable to the maximum value of SiC MESFETs at present.

KW - CaF

KW - Cut-off frequency

KW - Diamond

KW - Hydrogen-terminated surface channel

KW - MESFET

KW - MISFET

KW - Mobility

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M3 - Article

AN - SCOPUS:0242580192

SN - 0916-8524

VL - E86-C

SP - 1949

EP - 1954

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

IS - 10

ER -

RF Performance of Diamond Surface-Channel Field-Effect Transistors

Abstract

Keywords

ASJC Scopus subject areas

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