RF performance of high transconductance and high-channel-mobility surface-channel polycrystalline diamond metal-insulator-semiconductor field-effect transistors

Hitoshi Umezawa, Takuya Arima, Naoki Fujihara, Hirotada Taniuchi, Hiroaki Ishizaka, Minoru Tachiki, Christoph Wild, Peter Koidl, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    19 Citations (Scopus)

    Abstract

    The RF device potential of surface-channel polycrystalline diamond metal-insulator-semiconductor field-effect transistors (MISFETs) is demonstrated for the first time. Utilizing a self-aligned gate field-effect transistor (FET) fabrication process, effective transconductance of 70 mS/mm is realized at 0.7 μm gate length. This FET also shows high fTT and fmax of 2.7 and 3.8 GHz, respectively. However, the breakdown voltage and f max/fT ratio are lower than those for the homoepitaxial layer because of the parasitic capacitance at the grain boundaries in the drain region. Because of the fluctuation of channel mobility, the fluctuation of gm and fT is observed. In order to realize high-power operation at high frequency, the fabrication of the FET on a single grain to reduce the parasitic capacitance is required.

    Original languageEnglish
    Pages (from-to)2611-2614
    Number of pages4
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume41
    Issue number4 B
    DOIs
    Publication statusPublished - 2002 Apr

    Fingerprint

    MISFET devices
    Transconductance
    MIS (semiconductors)
    transconductance
    Field effect transistors
    Diamonds
    Capacitance
    field effect transistors
    diamonds
    Gates (transistor)
    Fabrication
    Electric breakdown
    Grain boundaries
    capacitance
    fabrication
    electrical faults
    grain boundaries

    Keywords

    • Hydrogen-terminated surface channel
    • MISFET
    • Polycrystalline diamond
    • RF performance
    • Self-aligned gate process

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    RF performance of high transconductance and high-channel-mobility surface-channel polycrystalline diamond metal-insulator-semiconductor field-effect transistors. / Umezawa, Hitoshi; Arima, Takuya; Fujihara, Naoki; Taniuchi, Hirotada; Ishizaka, Hiroaki; Tachiki, Minoru; Wild, Christoph; Koidl, Peter; Kawarada, Hiroshi.

    In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 41, No. 4 B, 04.2002, p. 2611-2614.

    Research output: Contribution to journalArticle

    Umezawa, Hitoshi ; Arima, Takuya ; Fujihara, Naoki ; Taniuchi, Hirotada ; Ishizaka, Hiroaki ; Tachiki, Minoru ; Wild, Christoph ; Koidl, Peter ; Kawarada, Hiroshi. / RF performance of high transconductance and high-channel-mobility surface-channel polycrystalline diamond metal-insulator-semiconductor field-effect transistors. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2002 ; Vol. 41, No. 4 B. pp. 2611-2614.
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    abstract = "The RF device potential of surface-channel polycrystalline diamond metal-insulator-semiconductor field-effect transistors (MISFETs) is demonstrated for the first time. Utilizing a self-aligned gate field-effect transistor (FET) fabrication process, effective transconductance of 70 mS/mm is realized at 0.7 μm gate length. This FET also shows high fTT and fmax of 2.7 and 3.8 GHz, respectively. However, the breakdown voltage and f max/fT ratio are lower than those for the homoepitaxial layer because of the parasitic capacitance at the grain boundaries in the drain region. Because of the fluctuation of channel mobility, the fluctuation of gm and fT is observed. In order to realize high-power operation at high frequency, the fabrication of the FET on a single grain to reduce the parasitic capacitance is required.",
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    AU - Taniuchi, Hirotada

    AU - Ishizaka, Hiroaki

    AU - Tachiki, Minoru

    AU - Wild, Christoph

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