RF response of PIN photodiode with avalanche multiplication using quantum dots

T. Umezawa, K. Akahane, A. Kanno, T. Kawanishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We fabricate a new PIN photodiode using InAs/InAlGaAs quantum dot absorption layer with an avalanche multiplication, low breakdown temperature coefficient, and high frequency response. Multiplication factors of M = 1 to M = 12 and the RF response over 10GHz are reported.

Original languageEnglish
Title of host publication2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013
DOIs
Publication statusPublished - 2013 Oct 18
Event10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 - Kyoto, Japan
Duration: 2013 Jun 302013 Jul 4

Publication series

NamePacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

Other

Other10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013
CountryJapan
CityKyoto
Period13/6/3013/7/4

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Umezawa, T., Akahane, K., Kanno, A., & Kawanishi, T. (2013). RF response of PIN photodiode with avalanche multiplication using quantum dots. In 2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 [6600243] (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest). https://doi.org/10.1109/CLEOPR.2013.6600243