RF response of PIN photodiode with avalanche multiplication using quantum dots

T. Umezawa, K. Akahane, A. Kanno, Tetsuya Kawanishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We fabricate a new PIN photodiode using InAs/InAlGaAs quantum dot absorption layer with an avalanche multiplication, low breakdown temperature coefficient, and high frequency response. Multiplication factors of M = 1 to M = 12 and the RF response over 10GHz are reported.

Original languageEnglish
Title of host publicationPacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 - Kyoto, Japan
Duration: 2013 Jun 302013 Jul 4

Other

Other10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013
CountryJapan
CityKyoto
Period13/6/3013/7/4

Fingerprint

Photodiodes
multiplication
avalanches
Semiconductor quantum dots
Frequency response
photodiodes
quantum dots
frequency response
breakdown
Temperature
coefficients
temperature
indium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Umezawa, T., Akahane, K., Kanno, A., & Kawanishi, T. (2013). RF response of PIN photodiode with avalanche multiplication using quantum dots. In Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest [6600243] https://doi.org/10.1109/CLEOPR.2013.6600243

RF response of PIN photodiode with avalanche multiplication using quantum dots. / Umezawa, T.; Akahane, K.; Kanno, A.; Kawanishi, Tetsuya.

Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest. 2013. 6600243.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Umezawa, T, Akahane, K, Kanno, A & Kawanishi, T 2013, RF response of PIN photodiode with avalanche multiplication using quantum dots. in Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest., 6600243, 10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013, Kyoto, Japan, 13/6/30. https://doi.org/10.1109/CLEOPR.2013.6600243
Umezawa T, Akahane K, Kanno A, Kawanishi T. RF response of PIN photodiode with avalanche multiplication using quantum dots. In Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest. 2013. 6600243 https://doi.org/10.1109/CLEOPR.2013.6600243
Umezawa, T. ; Akahane, K. ; Kanno, A. ; Kawanishi, Tetsuya. / RF response of PIN photodiode with avalanche multiplication using quantum dots. Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest. 2013.
@inproceedings{e05d3eeb6ed6463d8856072c2df2c849,
title = "RF response of PIN photodiode with avalanche multiplication using quantum dots",
abstract = "We fabricate a new PIN photodiode using InAs/InAlGaAs quantum dot absorption layer with an avalanche multiplication, low breakdown temperature coefficient, and high frequency response. Multiplication factors of M = 1 to M = 12 and the RF response over 10GHz are reported.",
author = "T. Umezawa and K. Akahane and A. Kanno and Tetsuya Kawanishi",
year = "2013",
doi = "10.1109/CLEOPR.2013.6600243",
language = "English",
isbn = "9781467364751",
booktitle = "Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest",

}

TY - GEN

T1 - RF response of PIN photodiode with avalanche multiplication using quantum dots

AU - Umezawa, T.

AU - Akahane, K.

AU - Kanno, A.

AU - Kawanishi, Tetsuya

PY - 2013

Y1 - 2013

N2 - We fabricate a new PIN photodiode using InAs/InAlGaAs quantum dot absorption layer with an avalanche multiplication, low breakdown temperature coefficient, and high frequency response. Multiplication factors of M = 1 to M = 12 and the RF response over 10GHz are reported.

AB - We fabricate a new PIN photodiode using InAs/InAlGaAs quantum dot absorption layer with an avalanche multiplication, low breakdown temperature coefficient, and high frequency response. Multiplication factors of M = 1 to M = 12 and the RF response over 10GHz are reported.

UR - http://www.scopus.com/inward/record.url?scp=84885436882&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84885436882&partnerID=8YFLogxK

U2 - 10.1109/CLEOPR.2013.6600243

DO - 10.1109/CLEOPR.2013.6600243

M3 - Conference contribution

SN - 9781467364751

BT - Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

ER -