Abstract
Intensity oscillation of reflection high-energy electron diffraction (RHEED) is observed during C60 layer epitaxial growth on GaAs (1 1 1)B and (1 1 1)A substrates. The frequency of the oscillation coincides well with growth rate of C60 layers, suggesting that C60 layers grow with repeating nucleation and a step flow growth as with GaAs and other semiconductor materials. Unusual oscillation is observed in the initial C60 layer growth on GaAs (1 1 1)B substrates with (2 × 2) reconstruction. The initial layer growth is completed at approximately half monolayer coverage by C60 molecules. This phenomenon is explained by the model that C60 absorption sites are limited due to As-trimers absorbed on (1 1 1)B surfaces. This model is strongly supported by the fact that no such effect is observed on GaAs (1 1 1)A substrates where no As-trimer is absorbed.
Original language | English |
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Pages (from-to) | 682-684 |
Number of pages | 3 |
Journal | Applied Surface Science |
Volume | 255 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2008 Nov 30 |
Keywords
- Fullerenes
- GaAs
- Molecular beam epitaxy
- RHEED intensity oscillation
ASJC Scopus subject areas
- Surfaces, Coatings and Films