Abstract
Intensity oscillation of reflection high-energy electron diffraction (RHEED) is observed during C60 layer epitaxial growth on GaAs (1 1 1)B and (1 1 1)A substrates. The frequency of the oscillation coincides well with growth rate of C60 layers, suggesting that C60 layers grow with repeating nucleation and a step flow growth as with GaAs and other semiconductor materials. Unusual oscillation is observed in the initial C60 layer growth on GaAs (1 1 1)B substrates with (2 × 2) reconstruction. The initial layer growth is completed at approximately half monolayer coverage by C60 molecules. This phenomenon is explained by the model that C60 absorption sites are limited due to As-trimers absorbed on (1 1 1)B surfaces. This model is strongly supported by the fact that no such effect is observed on GaAs (1 1 1)A substrates where no As-trimer is absorbed.
| Original language | English |
|---|---|
| Pages (from-to) | 682-684 |
| Number of pages | 3 |
| Journal | Applied Surface Science |
| Volume | 255 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2008 Nov 30 |
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Keywords
- Fullerenes
- GaAs
- Molecular beam epitaxy
- RHEED intensity oscillation
ASJC Scopus subject areas
- Surfaces, Coatings and Films
Cite this
RHEED intensity oscillation of C60 growth on GaAs substrates. / Nishinaga, J.; Kawaharazuka, A.; Horikoshi, Y.
In: Applied Surface Science, Vol. 255, No. 3, 30.11.2008, p. 682-684.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - RHEED intensity oscillation of C60 growth on GaAs substrates
AU - Nishinaga, J.
AU - Kawaharazuka, A.
AU - Horikoshi, Y.
PY - 2008/11/30
Y1 - 2008/11/30
N2 - Intensity oscillation of reflection high-energy electron diffraction (RHEED) is observed during C60 layer epitaxial growth on GaAs (1 1 1)B and (1 1 1)A substrates. The frequency of the oscillation coincides well with growth rate of C60 layers, suggesting that C60 layers grow with repeating nucleation and a step flow growth as with GaAs and other semiconductor materials. Unusual oscillation is observed in the initial C60 layer growth on GaAs (1 1 1)B substrates with (2 × 2) reconstruction. The initial layer growth is completed at approximately half monolayer coverage by C60 molecules. This phenomenon is explained by the model that C60 absorption sites are limited due to As-trimers absorbed on (1 1 1)B surfaces. This model is strongly supported by the fact that no such effect is observed on GaAs (1 1 1)A substrates where no As-trimer is absorbed.
AB - Intensity oscillation of reflection high-energy electron diffraction (RHEED) is observed during C60 layer epitaxial growth on GaAs (1 1 1)B and (1 1 1)A substrates. The frequency of the oscillation coincides well with growth rate of C60 layers, suggesting that C60 layers grow with repeating nucleation and a step flow growth as with GaAs and other semiconductor materials. Unusual oscillation is observed in the initial C60 layer growth on GaAs (1 1 1)B substrates with (2 × 2) reconstruction. The initial layer growth is completed at approximately half monolayer coverage by C60 molecules. This phenomenon is explained by the model that C60 absorption sites are limited due to As-trimers absorbed on (1 1 1)B surfaces. This model is strongly supported by the fact that no such effect is observed on GaAs (1 1 1)A substrates where no As-trimer is absorbed.
KW - Fullerenes
KW - GaAs
KW - Molecular beam epitaxy
KW - RHEED intensity oscillation
UR - http://www.scopus.com/inward/record.url?scp=55649114180&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=55649114180&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2008.07.036
DO - 10.1016/j.apsusc.2008.07.036
M3 - Article
VL - 255
SP - 682
EP - 684
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 3
ER -