RHEED intensity oscillation of C60 growth on GaAs substrates

J. Nishinaga, A. Kawaharazuka, Y. Horikoshi

Research output: Contribution to journalArticle

Abstract

Intensity oscillation of reflection high-energy electron diffraction (RHEED) is observed during C60 layer epitaxial growth on GaAs (1 1 1)B and (1 1 1)A substrates. The frequency of the oscillation coincides well with growth rate of C60 layers, suggesting that C60 layers grow with repeating nucleation and a step flow growth as with GaAs and other semiconductor materials. Unusual oscillation is observed in the initial C60 layer growth on GaAs (1 1 1)B substrates with (2 × 2) reconstruction. The initial layer growth is completed at approximately half monolayer coverage by C60 molecules. This phenomenon is explained by the model that C60 absorption sites are limited due to As-trimers absorbed on (1 1 1)B surfaces. This model is strongly supported by the fact that no such effect is observed on GaAs (1 1 1)A substrates where no As-trimer is absorbed.

Original languageEnglish
Pages (from-to)682-684
Number of pages3
JournalApplied Surface Science
Volume255
Issue number3
DOIs
Publication statusPublished - 2008 Nov 30

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Reflection high energy electron diffraction
Substrates
Epitaxial growth
Monolayers
Nucleation
Semiconductor materials
Molecules
gallium arsenide

Keywords

  • Fullerenes
  • GaAs
  • Molecular beam epitaxy
  • RHEED intensity oscillation

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

RHEED intensity oscillation of C60 growth on GaAs substrates. / Nishinaga, J.; Kawaharazuka, A.; Horikoshi, Y.

In: Applied Surface Science, Vol. 255, No. 3, 30.11.2008, p. 682-684.

Research output: Contribution to journalArticle

Nishinaga, J, Kawaharazuka, A & Horikoshi, Y 2008, 'RHEED intensity oscillation of C60 growth on GaAs substrates', Applied Surface Science, vol. 255, no. 3, pp. 682-684. https://doi.org/10.1016/j.apsusc.2008.07.036
Nishinaga, J. ; Kawaharazuka, A. ; Horikoshi, Y. / RHEED intensity oscillation of C60 growth on GaAs substrates. In: Applied Surface Science. 2008 ; Vol. 255, No. 3. pp. 682-684.
@article{edbf926ceb1c42d886b08844d40d131e,
title = "RHEED intensity oscillation of C60 growth on GaAs substrates",
abstract = "Intensity oscillation of reflection high-energy electron diffraction (RHEED) is observed during C60 layer epitaxial growth on GaAs (1 1 1)B and (1 1 1)A substrates. The frequency of the oscillation coincides well with growth rate of C60 layers, suggesting that C60 layers grow with repeating nucleation and a step flow growth as with GaAs and other semiconductor materials. Unusual oscillation is observed in the initial C60 layer growth on GaAs (1 1 1)B substrates with (2 × 2) reconstruction. The initial layer growth is completed at approximately half monolayer coverage by C60 molecules. This phenomenon is explained by the model that C60 absorption sites are limited due to As-trimers absorbed on (1 1 1)B surfaces. This model is strongly supported by the fact that no such effect is observed on GaAs (1 1 1)A substrates where no As-trimer is absorbed.",
keywords = "Fullerenes, GaAs, Molecular beam epitaxy, RHEED intensity oscillation",
author = "J. Nishinaga and A. Kawaharazuka and Y. Horikoshi",
year = "2008",
month = "11",
day = "30",
doi = "10.1016/j.apsusc.2008.07.036",
language = "English",
volume = "255",
pages = "682--684",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "3",

}

TY - JOUR

T1 - RHEED intensity oscillation of C60 growth on GaAs substrates

AU - Nishinaga, J.

AU - Kawaharazuka, A.

AU - Horikoshi, Y.

PY - 2008/11/30

Y1 - 2008/11/30

N2 - Intensity oscillation of reflection high-energy electron diffraction (RHEED) is observed during C60 layer epitaxial growth on GaAs (1 1 1)B and (1 1 1)A substrates. The frequency of the oscillation coincides well with growth rate of C60 layers, suggesting that C60 layers grow with repeating nucleation and a step flow growth as with GaAs and other semiconductor materials. Unusual oscillation is observed in the initial C60 layer growth on GaAs (1 1 1)B substrates with (2 × 2) reconstruction. The initial layer growth is completed at approximately half monolayer coverage by C60 molecules. This phenomenon is explained by the model that C60 absorption sites are limited due to As-trimers absorbed on (1 1 1)B surfaces. This model is strongly supported by the fact that no such effect is observed on GaAs (1 1 1)A substrates where no As-trimer is absorbed.

AB - Intensity oscillation of reflection high-energy electron diffraction (RHEED) is observed during C60 layer epitaxial growth on GaAs (1 1 1)B and (1 1 1)A substrates. The frequency of the oscillation coincides well with growth rate of C60 layers, suggesting that C60 layers grow with repeating nucleation and a step flow growth as with GaAs and other semiconductor materials. Unusual oscillation is observed in the initial C60 layer growth on GaAs (1 1 1)B substrates with (2 × 2) reconstruction. The initial layer growth is completed at approximately half monolayer coverage by C60 molecules. This phenomenon is explained by the model that C60 absorption sites are limited due to As-trimers absorbed on (1 1 1)B surfaces. This model is strongly supported by the fact that no such effect is observed on GaAs (1 1 1)A substrates where no As-trimer is absorbed.

KW - Fullerenes

KW - GaAs

KW - Molecular beam epitaxy

KW - RHEED intensity oscillation

UR - http://www.scopus.com/inward/record.url?scp=55649114180&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=55649114180&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2008.07.036

DO - 10.1016/j.apsusc.2008.07.036

M3 - Article

VL - 255

SP - 682

EP - 684

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 3

ER -