RHEED intensity oscillation of C60 layer epitaxial growth

Jiro Nishinaga, Atsushi Kawaharazuka, Yoshiji Horikoshi

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8 Citations (Scopus)

Abstract

Intensity oscillations of reflection high-energy electron diffraction are observed during a C60 layer epitaxial growth on GaAs (1 1 1)B, (1 1 4)A and (1 1 4)B substrates. Frequencies of the oscillations coincide well with growth rates of C60 layers, suggesting that C60 layers grow by layer-by-layer growth mode as with GaAs and other semiconductor materials. Anomalous oscillations are observed in the initial stage of a C60 layer growth on GaAs (1 1 1)B surface with (2×2) reconstruction. These oscillations indicate that the C60 first-layer growth is completed at approximately half monolayer coverage. This phenomenon is explained by a model that C60 adsorption sites are limited due to As-trimers adsorbed on GaAs surface. Clear oscillations are observed during a C60 layer growth on GaAs (1 1 4)A substrate, and X-ray diffraction peaks of the layer are sharp. In contrast, no oscillation is detected during the growth on the (1 1 4)B substrate, and these layers exhibit poor X-ray diffraction characteristics. Thus, the C60 epitaxial layer growth on GaAs substrates is strongly affected by the GaAs surface reconstruction and polarity.

Original languageEnglish
Pages (from-to)2227-2231
Number of pages5
JournalJournal of Crystal Growth
Volume311
Issue number7
DOIs
Publication statusPublished - 2009 Mar 15

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Keywords

  • A1. Reflection high energy electron diffraction
  • A1. Surface structure
  • A1. X-ray diffraction
  • A3. Molecular beam epitaxy
  • B1. Fullerenes
  • B1. Organic compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

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