Robustness of CNT via interconnect fabricated by low temperature process over a high-density current

Akio Kawabata, Shintaro Sato, Tatsuhiro Nozue, Takashi Hyakushima, Masaaki Norimatsu, Miho Mishima, Tomo Murakami, Daiyu Kondo, Koji Asano, Mari Ohfuti, Hiroshi Kawarada, Tadashi Sakai, Mizuhisa Nihei, Yuji Awano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

46 Citations (Scopus)

Abstract

We fabricated a carbon nanotube (CNT) via interconnect and evaluated its robustness over a high-density current. CNTs were synthesized at temperatures as low as 365°C, which is probably the lowest for this application, without degrading the ultra low-k interlayer dielectrics (k = 2.6). We measured the electrical properties of CNT vias as small as 160 nm in diameter and found that a CNT via was able to sustain a current density as high as 5.0×10 6 A/cm2 at 105°C for 100 hours without any deterioration in its properties.

Original languageEnglish
Title of host publication2008 IEEE International Interconnect Technology Conference, IITC
Pages237-239
Number of pages3
DOIs
Publication statusPublished - 2008 Sep 9
Event2008 IEEE International Interconnect Technology Conference, IITC - Burlingame, CA, United States
Duration: 2008 Jun 12008 Jun 4

Publication series

Name2008 IEEE International Interconnect Technology Conference, IITC

Conference

Conference2008 IEEE International Interconnect Technology Conference, IITC
CountryUnited States
CityBurlingame, CA
Period08/6/108/6/4

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Robustness of CNT via interconnect fabricated by low temperature process over a high-density current'. Together they form a unique fingerprint.

  • Cite this

    Kawabata, A., Sato, S., Nozue, T., Hyakushima, T., Norimatsu, M., Mishima, M., Murakami, T., Kondo, D., Asano, K., Ohfuti, M., Kawarada, H., Sakai, T., Nihei, M., & Awano, Y. (2008). Robustness of CNT via interconnect fabricated by low temperature process over a high-density current. In 2008 IEEE International Interconnect Technology Conference, IITC (pp. 237-239). [4546977] (2008 IEEE International Interconnect Technology Conference, IITC). https://doi.org/10.1109/IITC.2008.4546977