Robustness of CNT via interconnect fabricated by low temperature process over a high-density current

Akio Kawabata*, Shintaro Sato, Tatsuhiro Nozue, Takashi Hyakushima, Masaaki Norimatsu, Miho Mishima, Tomo Murakami, Daiyu Kondo, Koji Asano, Mari Ohfuti, Hiroshi Kawarada, Tadashi Sakai, Mizuhisa Nihei, Yuji Awano

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

47 Citations (Scopus)

Abstract

We fabricated a carbon nanotube (CNT) via interconnect and evaluated its robustness over a high-density current. CNTs were synthesized at temperatures as low as 365°C, which is probably the lowest for this application, without degrading the ultra low-k interlayer dielectrics (k = 2.6). We measured the electrical properties of CNT vias as small as 160 nm in diameter and found that a CNT via was able to sustain a current density as high as 5.0×10 6 A/cm2 at 105°C for 100 hours without any deterioration in its properties.

Original languageEnglish
Title of host publication2008 IEEE International Interconnect Technology Conference, IITC
Pages237-239
Number of pages3
DOIs
Publication statusPublished - 2008 Sep 9
Event2008 IEEE International Interconnect Technology Conference, IITC - Burlingame, CA, United States
Duration: 2008 Jun 12008 Jun 4

Publication series

Name2008 IEEE International Interconnect Technology Conference, IITC

Conference

Conference2008 IEEE International Interconnect Technology Conference, IITC
Country/TerritoryUnited States
CityBurlingame, CA
Period08/6/108/6/4

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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