Robustness of CNT via interconnect fabricated by low temperature process over a high-density current

Akio Kawabata, Shintaro Sato, Tatsuhiro Nozue, Takashi Hyakushima, Masaaki Norimatsu, Miho Mishima, Tomo Murakami, Daiyu Kondo, Koji Asano, Mari Ohfuti, Hiroshi Kawarada, Tadashi Sakai, Mizuhisa Nihei, Yuji Awano

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    46 Citations (Scopus)

    Abstract

    We fabricated a carbon nanotube (CNT) via interconnect and evaluated its robustness over a high-density current. CNTs were synthesized at temperatures as low as 365°C, which is probably the lowest for this application, without degrading the ultra low-k interlayer dielectrics (k = 2.6). We measured the electrical properties of CNT vias as small as 160 nm in diameter and found that a CNT via was able to sustain a current density as high as 5.0×10 6 A/cm2 at 105°C for 100 hours without any deterioration in its properties.

    Original languageEnglish
    Title of host publication2008 IEEE International Interconnect Technology Conference, IITC
    Pages237-239
    Number of pages3
    DOIs
    Publication statusPublished - 2008
    Event2008 IEEE International Interconnect Technology Conference, IITC - Burlingame, CA
    Duration: 2008 Jun 12008 Jun 4

    Other

    Other2008 IEEE International Interconnect Technology Conference, IITC
    CityBurlingame, CA
    Period08/6/108/6/4

    Fingerprint

    Carbon nanotubes
    Current density
    Temperature
    Deterioration
    Electric properties
    Low-k dielectric

    ASJC Scopus subject areas

    • Hardware and Architecture
    • Electrical and Electronic Engineering

    Cite this

    Kawabata, A., Sato, S., Nozue, T., Hyakushima, T., Norimatsu, M., Mishima, M., ... Awano, Y. (2008). Robustness of CNT via interconnect fabricated by low temperature process over a high-density current. In 2008 IEEE International Interconnect Technology Conference, IITC (pp. 237-239). [4546977] https://doi.org/10.1109/IITC.2008.4546977

    Robustness of CNT via interconnect fabricated by low temperature process over a high-density current. / Kawabata, Akio; Sato, Shintaro; Nozue, Tatsuhiro; Hyakushima, Takashi; Norimatsu, Masaaki; Mishima, Miho; Murakami, Tomo; Kondo, Daiyu; Asano, Koji; Ohfuti, Mari; Kawarada, Hiroshi; Sakai, Tadashi; Nihei, Mizuhisa; Awano, Yuji.

    2008 IEEE International Interconnect Technology Conference, IITC. 2008. p. 237-239 4546977.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Kawabata, A, Sato, S, Nozue, T, Hyakushima, T, Norimatsu, M, Mishima, M, Murakami, T, Kondo, D, Asano, K, Ohfuti, M, Kawarada, H, Sakai, T, Nihei, M & Awano, Y 2008, Robustness of CNT via interconnect fabricated by low temperature process over a high-density current. in 2008 IEEE International Interconnect Technology Conference, IITC., 4546977, pp. 237-239, 2008 IEEE International Interconnect Technology Conference, IITC, Burlingame, CA, 08/6/1. https://doi.org/10.1109/IITC.2008.4546977
    Kawabata A, Sato S, Nozue T, Hyakushima T, Norimatsu M, Mishima M et al. Robustness of CNT via interconnect fabricated by low temperature process over a high-density current. In 2008 IEEE International Interconnect Technology Conference, IITC. 2008. p. 237-239. 4546977 https://doi.org/10.1109/IITC.2008.4546977
    Kawabata, Akio ; Sato, Shintaro ; Nozue, Tatsuhiro ; Hyakushima, Takashi ; Norimatsu, Masaaki ; Mishima, Miho ; Murakami, Tomo ; Kondo, Daiyu ; Asano, Koji ; Ohfuti, Mari ; Kawarada, Hiroshi ; Sakai, Tadashi ; Nihei, Mizuhisa ; Awano, Yuji. / Robustness of CNT via interconnect fabricated by low temperature process over a high-density current. 2008 IEEE International Interconnect Technology Conference, IITC. 2008. pp. 237-239
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    AU - Norimatsu, Masaaki

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    AU - Ohfuti, Mari

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