Role of nonstoichiometry on UV absorption and luminescence in high-purity silica.

Hiroyuki Nishikawa, Ryoichi Tohmon, Kaya Nagasawa, Yoshimichi Ohki, Yoshimasa Hama

Research output: Contribution to journalConference article

6 Citations (Scopus)

Abstract

Role of nonstoichiometry on the formation of UV absorption and luminescence bands in high-purity silica is discussed. The 5.0-eV and 3.8-eV bands are observed in "oxygen-deficient" and "oxygen-surplus" silica, respectively. The 5.0-eV band is caused by oxygen vacancies (≡Si- Si≡) and the 3.8-eV band by peroxy linkages (≡Si-0-0-Si≡). Synthesis conditions and thermal history after the synthesis are shown to affect the formation of defects such as oxygen vacancies and peroxy linkages. The 2.7-eV luminescence band observed in "oxygen-deficient" silica is shown to be primarily due to the oxygen vacancies.

Original languageEnglish
Pages (from-to)281-289
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1128
DOIs
Publication statusPublished - 1989 Dec 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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