Role of nonstoichiometry on UV absorption and luminescence in high-purity silica.

Hiroyuki Nishikawa, Ryoichi Tohmon, Kaya Nagasawa, Yoshimichi Ohki, Yoshimasa Hama

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    6 Citations (Scopus)

    Abstract

    Role of nonstoichiometry on the formation of UV absorption and luminescence bands in high-purity silica is discussed. The 5.0-eV and 3.8-eV bands are observed in "oxygen-deficient" and "oxygen-surplus" silica, respectively. The 5.0-eV band is caused by oxygen vacancies (≡Si- Si≡) and the 3.8-eV band by peroxy linkages (≡Si-0-0-Si≡). Synthesis conditions and thermal history after the synthesis are shown to affect the formation of defects such as oxygen vacancies and peroxy linkages. The 2.7-eV luminescence band observed in "oxygen-deficient" silica is shown to be primarily due to the oxygen vacancies.

    Original languageEnglish
    Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
    Pages281-289
    Number of pages9
    Volume1128
    DOIs
    Publication statusPublished - 1989

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    ASJC Scopus subject areas

    • Applied Mathematics
    • Computer Science Applications
    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Cite this

    Nishikawa, H., Tohmon, R., Nagasawa, K., Ohki, Y., & Hama, Y. (1989). Role of nonstoichiometry on UV absorption and luminescence in high-purity silica. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 1128, pp. 281-289) https://doi.org/10.1117/12.961473