Role of nonstoichiometry on UV absorption and luminescence in high-purity silica.

Hiroyuki Nishikawa; Ryoichi Tohmon; Kaya Nagasawa; Yoshimichi Ohki; Yoshimasa Hama

doi:10.1117/12.961473

Role of nonstoichiometry on UV absorption and luminescence in high-purity silica.

Hiroyuki Nishikawa, Ryoichi Tohmon, Kaya Nagasawa, Yoshimichi Ohki, Yoshimasa Hama

School of Advanced Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

6 Citations (Scopus)

Abstract

Role of nonstoichiometry on the formation of UV absorption and luminescence bands in high-purity silica is discussed. The 5.0-eV and 3.8-eV bands are observed in "oxygen-deficient" and "oxygen-surplus" silica, respectively. The 5.0-eV band is caused by oxygen vacancies (≡Si- Si≡) and the 3.8-eV band by peroxy linkages (≡Si-0-0-Si≡). Synthesis conditions and thermal history after the synthesis are shown to affect the formation of defects such as oxygen vacancies and peroxy linkages. The 2.7-eV luminescence band observed in "oxygen-deficient" silica is shown to be primarily due to the oxygen vacancies.

Original language	English
Pages (from-to)	281-289
Number of pages	9
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1128
DOIs	https://doi.org/10.1117/12.961473
Publication status	Published - 1989 Dec 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "Role of nonstoichiometry on UV absorption and luminescence in high-purity silica.",

abstract = "Role of nonstoichiometry on the formation of UV absorption and luminescence bands in high-purity silica is discussed. The 5.0-eV and 3.8-eV bands are observed in {"}oxygen-deficient{"} and {"}oxygen-surplus{"} silica, respectively. The 5.0-eV band is caused by oxygen vacancies (≡Si- Si≡) and the 3.8-eV band by peroxy linkages (≡Si-0-0-Si≡). Synthesis conditions and thermal history after the synthesis are shown to affect the formation of defects such as oxygen vacancies and peroxy linkages. The 2.7-eV luminescence band observed in {"}oxygen-deficient{"} silica is shown to be primarily due to the oxygen vacancies.",

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T1 - Role of nonstoichiometry on UV absorption and luminescence in high-purity silica.

AU - Nishikawa, Hiroyuki

AU - Tohmon, Ryoichi

AU - Nagasawa, Kaya

AU - Ohki, Yoshimichi

AU - Hama, Yoshimasa

PY - 1989/12/1

Y1 - 1989/12/1

N2 - Role of nonstoichiometry on the formation of UV absorption and luminescence bands in high-purity silica is discussed. The 5.0-eV and 3.8-eV bands are observed in "oxygen-deficient" and "oxygen-surplus" silica, respectively. The 5.0-eV band is caused by oxygen vacancies (≡Si- Si≡) and the 3.8-eV band by peroxy linkages (≡Si-0-0-Si≡). Synthesis conditions and thermal history after the synthesis are shown to affect the formation of defects such as oxygen vacancies and peroxy linkages. The 2.7-eV luminescence band observed in "oxygen-deficient" silica is shown to be primarily due to the oxygen vacancies.

AB - Role of nonstoichiometry on the formation of UV absorption and luminescence bands in high-purity silica is discussed. The 5.0-eV and 3.8-eV bands are observed in "oxygen-deficient" and "oxygen-surplus" silica, respectively. The 5.0-eV band is caused by oxygen vacancies (≡Si- Si≡) and the 3.8-eV band by peroxy linkages (≡Si-0-0-Si≡). Synthesis conditions and thermal history after the synthesis are shown to affect the formation of defects such as oxygen vacancies and peroxy linkages. The 2.7-eV luminescence band observed in "oxygen-deficient" silica is shown to be primarily due to the oxygen vacancies.

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Role of nonstoichiometry on UV absorption and luminescence in high-purity silica.

Abstract

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