Role of point defects in dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane

Keisuke Ishii, Daisuke Isshiki, Yoshimichi Ohki, Hiroyuki Nishikawa, Makoto Takiyama

    Research output: Chapter in Book/Report/Conference proceedingChapter

    15 Citations (Scopus)

    Abstract

    The intrinsic breakdown strength of thin SiO2 films formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane was measured using a self-healing technique by applying short-duration voltage pulses. Point defects in the films and other film qualities were examined by instrumental analyses and by optical absorption and luminescence using synchrotron radiation. The intrinsic breakdown strength decreases when the deposition temperature becomes higher than 400 °C, in spite of the fact that the optical gap and the density increase and the impurity content decreases. Based on the fact that the film deposited at high temperatures shows absorption at 7.6-eV and luminescence at 4.4-eV, the existence of oxygen vacancies (≡Si-Si≡) is suggested. The intrinsic breakdown strength is increased by decreasing oxygen vacancies through oxygen treatment. From these results, it is considered that oxygen vacancies play a crucial role in lowering the breakdown strength. Three possible mechanisms are discussed.

    Original languageEnglish
    Title of host publicationJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
    Place of PublicationMinato-ku, Japan
    PublisherJJAP
    Pages205-211
    Number of pages7
    Volume34
    Edition1
    Publication statusPublished - 1995 Jan

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    Point defects
    Oxygen vacancies
    Plasma enhanced chemical vapor deposition
    Electric breakdown
    Luminescence
    Polymers
    Synchrotron radiation
    Light absorption
    Impurities
    Thin films
    Temperature
    Oxygen
    Electric potential

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Ishii, K., Isshiki, D., Ohki, Y., Nishikawa, H., & Takiyama, M. (1995). Role of point defects in dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane. In Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers (1 ed., Vol. 34, pp. 205-211). Minato-ku, Japan: JJAP.

    Role of point defects in dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane. / Ishii, Keisuke; Isshiki, Daisuke; Ohki, Yoshimichi; Nishikawa, Hiroyuki; Takiyama, Makoto.

    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. Vol. 34 1. ed. Minato-ku, Japan : JJAP, 1995. p. 205-211.

    Research output: Chapter in Book/Report/Conference proceedingChapter

    Ishii, K, Isshiki, D, Ohki, Y, Nishikawa, H & Takiyama, M 1995, Role of point defects in dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane. in Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 1 edn, vol. 34, JJAP, Minato-ku, Japan, pp. 205-211.
    Ishii K, Isshiki D, Ohki Y, Nishikawa H, Takiyama M. Role of point defects in dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane. In Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 1 ed. Vol. 34. Minato-ku, Japan: JJAP. 1995. p. 205-211
    Ishii, Keisuke ; Isshiki, Daisuke ; Ohki, Yoshimichi ; Nishikawa, Hiroyuki ; Takiyama, Makoto. / Role of point defects in dielectric breakdown of SiO2 formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. Vol. 34 1. ed. Minato-ku, Japan : JJAP, 1995. pp. 205-211
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    abstract = "The intrinsic breakdown strength of thin SiO2 films formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane was measured using a self-healing technique by applying short-duration voltage pulses. Point defects in the films and other film qualities were examined by instrumental analyses and by optical absorption and luminescence using synchrotron radiation. The intrinsic breakdown strength decreases when the deposition temperature becomes higher than 400 °C, in spite of the fact that the optical gap and the density increase and the impurity content decreases. Based on the fact that the film deposited at high temperatures shows absorption at 7.6-eV and luminescence at 4.4-eV, the existence of oxygen vacancies (≡Si-Si≡) is suggested. The intrinsic breakdown strength is increased by decreasing oxygen vacancies through oxygen treatment. From these results, it is considered that oxygen vacancies play a crucial role in lowering the breakdown strength. Three possible mechanisms are discussed.",
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