Roles of point defects in thermally enhanced generation and transfer of electrons and holes in LaAlO3

Daiki Yamasaka, Yosuke Horii, Takaaki Morimoto, Yoshimichi Ohki

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    Abstract

    Thermal annealing was given to single crystal LaAlO3 and its effects were examined by measuring electron spin resonance (ESR) and optical absorption. When LaAlO3 was annealed at temperatures above 500°C in an oxidizing atmosphere, the intensities of ESR signals due to transition metal, likely ascribable to Fe3+, decreased. Concurrently with this, two optical absorption bands at 2.7 and 3.5 eV, attributable to a combination of a hole and a La3+ (or Al3+) vacancy, increased. These results indicate that thermal electron-hole generation is induced by oxidizing annealing and that the generated electrons and holes are then captured by Fe3+ ions and La3+ or Al3+ vacancies, respectively. It is also assumed that captured electrons and holes are released and recombine with each other by reducing annealing.

    Original languageEnglish
    Article number071501
    JournalJapanese Journal of Applied Physics
    Volume52
    Issue number7 PART 1
    DOIs
    Publication statusPublished - 2013 Jan

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    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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