Room-temperature amorphous alloy field-effect transistor exhibiting particle and wave electronic transport

M. Fukuhara, Hiroshi Kawarada

    Research output: Contribution to journalArticle


    The realization of room-temperature macroscopic field effect transistors (FETs) will lead to new epoch-making possibilities for electronic applications. The Id-Vg characteristics of the millimeter-sized aluminum-oxide amorphous alloy (Ni0.36Nb0.24Zr0.40)90H10 FETs were measured at a gate-drain bias voltage of 0-60 μV in nonmagnetic conditions and under a magnetic fields at room temperature. Application of dc voltages to the gate electrode resulted in the transistor exhibiting one-electron Coulomb oscillation with a period of 0.28 mV, Fabry-Perot interference with a period of 2.35 μV under nonmagnetic conditions, and a Fano effect with a period of 0.26 mV for Vg and 0.2 T under a magnetic field. The realization of a low-energy controllable device made from millimeter-sized Ni-Nb-Zr-H amorphous alloy throws new light on cluster electronics.

    Original languageEnglish
    Article number084302
    JournalJournal of Applied Physics
    Issue number8
    Publication statusPublished - 2015 Feb 28


    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this