Room-temperature amorphous alloy field-effect transistor exhibiting particle and wave electronic transport

M. Fukuhara, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    Abstract

    The realization of room-temperature macroscopic field effect transistors (FETs) will lead to new epoch-making possibilities for electronic applications. The Id-Vg characteristics of the millimeter-sized aluminum-oxide amorphous alloy (Ni0.36Nb0.24Zr0.40)90H10 FETs were measured at a gate-drain bias voltage of 0-60 μV in nonmagnetic conditions and under a magnetic fields at room temperature. Application of dc voltages to the gate electrode resulted in the transistor exhibiting one-electron Coulomb oscillation with a period of 0.28 mV, Fabry-Perot interference with a period of 2.35 μV under nonmagnetic conditions, and a Fano effect with a period of 0.26 mV for Vg and 0.2 T under a magnetic field. The realization of a low-energy controllable device made from millimeter-sized Ni-Nb-Zr-H amorphous alloy throws new light on cluster electronics.

    Original languageEnglish
    Article number084302
    JournalJournal of Applied Physics
    Volume117
    Issue number8
    DOIs
    Publication statusPublished - 2015 Feb 28

    Fingerprint

    field effect transistors
    electric potential
    room temperature
    electronics
    magnetic fields
    transistors
    aluminum oxides
    time measurement
    interference
    oscillations
    electrodes
    electrons
    energy

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    Room-temperature amorphous alloy field-effect transistor exhibiting particle and wave electronic transport. / Fukuhara, M.; Kawarada, Hiroshi.

    In: Journal of Applied Physics, Vol. 117, No. 8, 084302, 28.02.2015.

    Research output: Contribution to journalArticle

    @article{d5486e6cc822484cb9ff6fe7ae3789f4,
    title = "Room-temperature amorphous alloy field-effect transistor exhibiting particle and wave electronic transport",
    abstract = "The realization of room-temperature macroscopic field effect transistors (FETs) will lead to new epoch-making possibilities for electronic applications. The Id-Vg characteristics of the millimeter-sized aluminum-oxide amorphous alloy (Ni0.36Nb0.24Zr0.40)90H10 FETs were measured at a gate-drain bias voltage of 0-60 μV in nonmagnetic conditions and under a magnetic fields at room temperature. Application of dc voltages to the gate electrode resulted in the transistor exhibiting one-electron Coulomb oscillation with a period of 0.28 mV, Fabry-Perot interference with a period of 2.35 μV under nonmagnetic conditions, and a Fano effect with a period of 0.26 mV for Vg and 0.2 T under a magnetic field. The realization of a low-energy controllable device made from millimeter-sized Ni-Nb-Zr-H amorphous alloy throws new light on cluster electronics.",
    author = "M. Fukuhara and Hiroshi Kawarada",
    year = "2015",
    month = "2",
    day = "28",
    doi = "10.1063/1.4913296",
    language = "English",
    volume = "117",
    journal = "Journal of Applied Physics",
    issn = "0021-8979",
    publisher = "American Institute of Physics Publising LLC",
    number = "8",

    }

    TY - JOUR

    T1 - Room-temperature amorphous alloy field-effect transistor exhibiting particle and wave electronic transport

    AU - Fukuhara, M.

    AU - Kawarada, Hiroshi

    PY - 2015/2/28

    Y1 - 2015/2/28

    N2 - The realization of room-temperature macroscopic field effect transistors (FETs) will lead to new epoch-making possibilities for electronic applications. The Id-Vg characteristics of the millimeter-sized aluminum-oxide amorphous alloy (Ni0.36Nb0.24Zr0.40)90H10 FETs were measured at a gate-drain bias voltage of 0-60 μV in nonmagnetic conditions and under a magnetic fields at room temperature. Application of dc voltages to the gate electrode resulted in the transistor exhibiting one-electron Coulomb oscillation with a period of 0.28 mV, Fabry-Perot interference with a period of 2.35 μV under nonmagnetic conditions, and a Fano effect with a period of 0.26 mV for Vg and 0.2 T under a magnetic field. The realization of a low-energy controllable device made from millimeter-sized Ni-Nb-Zr-H amorphous alloy throws new light on cluster electronics.

    AB - The realization of room-temperature macroscopic field effect transistors (FETs) will lead to new epoch-making possibilities for electronic applications. The Id-Vg characteristics of the millimeter-sized aluminum-oxide amorphous alloy (Ni0.36Nb0.24Zr0.40)90H10 FETs were measured at a gate-drain bias voltage of 0-60 μV in nonmagnetic conditions and under a magnetic fields at room temperature. Application of dc voltages to the gate electrode resulted in the transistor exhibiting one-electron Coulomb oscillation with a period of 0.28 mV, Fabry-Perot interference with a period of 2.35 μV under nonmagnetic conditions, and a Fano effect with a period of 0.26 mV for Vg and 0.2 T under a magnetic field. The realization of a low-energy controllable device made from millimeter-sized Ni-Nb-Zr-H amorphous alloy throws new light on cluster electronics.

    UR - http://www.scopus.com/inward/record.url?scp=84923500000&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84923500000&partnerID=8YFLogxK

    U2 - 10.1063/1.4913296

    DO - 10.1063/1.4913296

    M3 - Article

    AN - SCOPUS:84923500000

    VL - 117

    JO - Journal of Applied Physics

    JF - Journal of Applied Physics

    SN - 0021-8979

    IS - 8

    M1 - 084302

    ER -