Room-temperature amorphous alloy field-effect transistor exhibiting particle and wave electronic transport

M. Fukuhara; H. Kawarada

doi:10.1063/1.4913296

Room-temperature amorphous alloy field-effect transistor exhibiting particle and wave electronic transport

M. Fukuhara, H. Kawarada

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The realization of room-temperature macroscopic field effect transistors (FETs) will lead to new epoch-making possibilities for electronic applications. The I_d-V_g characteristics of the millimeter-sized aluminum-oxide amorphous alloy (Ni_0.36Nb_0.24Zr_0.40)₉₀H₁₀ FETs were measured at a gate-drain bias voltage of 0-60 μV in nonmagnetic conditions and under a magnetic fields at room temperature. Application of dc voltages to the gate electrode resulted in the transistor exhibiting one-electron Coulomb oscillation with a period of 0.28 mV, Fabry-Perot interference with a period of 2.35 μV under nonmagnetic conditions, and a Fano effect with a period of 0.26 mV for Vg and 0.2 T under a magnetic field. The realization of a low-energy controllable device made from millimeter-sized Ni-Nb-Zr-H amorphous alloy throws new light on cluster electronics.

Original language	English
Article number	084302
Journal	Journal of Applied Physics
Volume	117
Issue number	8
DOIs	https://doi.org/10.1063/1.4913296
Publication status	Published - 2015 Feb 28

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.4913296

Cite this

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abstract = "The realization of room-temperature macroscopic field effect transistors (FETs) will lead to new epoch-making possibilities for electronic applications. The Id-Vg characteristics of the millimeter-sized aluminum-oxide amorphous alloy (Ni0.36Nb0.24Zr0.40)90H10 FETs were measured at a gate-drain bias voltage of 0-60 μV in nonmagnetic conditions and under a magnetic fields at room temperature. Application of dc voltages to the gate electrode resulted in the transistor exhibiting one-electron Coulomb oscillation with a period of 0.28 mV, Fabry-Perot interference with a period of 2.35 μV under nonmagnetic conditions, and a Fano effect with a period of 0.26 mV for Vg and 0.2 T under a magnetic field. The realization of a low-energy controllable device made from millimeter-sized Ni-Nb-Zr-H amorphous alloy throws new light on cluster electronics.",

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Room-temperature amorphous alloy field-effect transistor exhibiting particle and wave electronic transport

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