Room temperature blue light emitting p-n diodes from Zn(S,Se)-based multiple quantum well structures

W. Xie, D. C. Grillo, R. L. Gunshor, Masakazu Kobayashi, H. Jeon, J. Ding, A. V. Nurmikko, G. C. Hua, N. Otsuka

Research output: Contribution to journal › Article

68 Citations (Scopus)

Abstract

Blue (494 nm) light emitting quantum well diodes based on Zn(S,Se) p-n junctions are demonstrated at room temperature. P-type Zn(S,Se) is realized by using a nitrogen rf plasma cell. The light emitting diode is formed on homoepitaxial GaAs buffer layers by molecular beam epitaxy. The S fraction of the alloy is selected to provide a lattice match between the II-VI active region and the GaAs buffer; the result is an active region having a dislocation density below 105/cm-2. The letter discusses emission characteristics as well as the x-ray rocking curve and transmission electron microscopy characterization of the structures.

Original languageEnglish
Pages (from-to)1999-2001
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number16
DOIs
Publication statusPublished - 1992
Externally publishedYes

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buffers
diodes
quantum wells
nitrogen plasma
room temperature
p-n junctions
molecular beam epitaxy
light emitting diodes
transmission electron microscopy
curves
cells
x rays

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Room temperature blue light emitting p-n diodes from Zn(S,Se)-based multiple quantum well structures. / Xie, W.; Grillo, D. C.; Gunshor, R. L.; Kobayashi, Masakazu; Jeon, H.; Ding, J.; Nurmikko, A. V.; Hua, G. C.; Otsuka, N.

In: Applied Physics Letters, Vol. 60, No. 16, 1992, p. 1999-2001.

Research output: Contribution to journal › Article

Xie, W, Grillo, DC, Gunshor, RL, Kobayashi, M, Jeon, H, Ding, J, Nurmikko, AV, Hua, GC & Otsuka, N 1992, 'Room temperature blue light emitting p-n diodes from Zn(S,Se)-based multiple quantum well structures', Applied Physics Letters, vol. 60, no. 16, pp. 1999-2001. https://doi.org/10.1063/1.107123
Xie W, Grillo DC, Gunshor RL, Kobayashi M, Jeon H, Ding J et al. Room temperature blue light emitting p-n diodes from Zn(S,Se)-based multiple quantum well structures. Applied Physics Letters. 1992;60(16):1999-2001. https://doi.org/10.1063/1.107123
Xie, W. ; Grillo, D. C. ; Gunshor, R. L. ; Kobayashi, Masakazu ; Jeon, H. ; Ding, J. ; Nurmikko, A. V. ; Hua, G. C. ; Otsuka, N. / Room temperature blue light emitting p-n diodes from Zn(S,Se)-based multiple quantum well structures. In: Applied Physics Letters. 1992 ; Vol. 60, No. 16. pp. 1999-2001.
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abstract = "Blue (494 nm) light emitting quantum well diodes based on Zn(S,Se) p-n junctions are demonstrated at room temperature. P-type Zn(S,Se) is realized by using a nitrogen rf plasma cell. The light emitting diode is formed on homoepitaxial GaAs buffer layers by molecular beam epitaxy. The S fraction of the alloy is selected to provide a lattice match between the II-VI active region and the GaAs buffer; the result is an active region having a dislocation density below 105/cm-2. The letter discusses emission characteristics as well as the x-ray rocking curve and transmission electron microscopy characterization of the structures.",
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AU - Jeon, H.

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AU - Nurmikko, A. V.

AU - Hua, G. C.

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AB - Blue (494 nm) light emitting quantum well diodes based on Zn(S,Se) p-n junctions are demonstrated at room temperature. P-type Zn(S,Se) is realized by using a nitrogen rf plasma cell. The light emitting diode is formed on homoepitaxial GaAs buffer layers by molecular beam epitaxy. The S fraction of the alloy is selected to provide a lattice match between the II-VI active region and the GaAs buffer; the result is an active region having a dislocation density below 105/cm-2. The letter discusses emission characteristics as well as the x-ray rocking curve and transmission electron microscopy characterization of the structures.

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