Abstract
Blue (494 nm) light emitting quantum well diodes based on Zn(S,Se) p-n junctions are demonstrated at room temperature. P-type Zn(S,Se) is realized by using a nitrogen rf plasma cell. The light emitting diode is formed on homoepitaxial GaAs buffer layers by molecular beam epitaxy. The S fraction of the alloy is selected to provide a lattice match between the II-VI active region and the GaAs buffer; the result is an active region having a dislocation density below 105/cm-2. The letter discusses emission characteristics as well as the x-ray rocking curve and transmission electron microscopy characterization of the structures.
Original language | English |
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Pages (from-to) | 1999-2001 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 60 |
Issue number | 16 |
DOIs | |
Publication status | Published - 1992 Dec 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)