Room temperature blue light emitting p-n diodes from Zn(S,Se)-based multiple quantum well structures

W. Xie; D. C. Grillo; R. L. Gunshor; M. Kobayashi; H. Jeon; J. Ding; A. V. Nurmikko; G. C. Hua; N. Otsuka

doi:10.1063/1.107123

Room temperature blue light emitting p-n diodes from Zn(S,Se)-based multiple quantum well structures

W. Xie, D. C. Grillo, R. L. Gunshor, M. Kobayashi, H. Jeon, J. Ding, A. V. Nurmikko, G. C. Hua, N. Otsuka

School of Advanced Science and Engineering

Research output: Contribution to journal › Article

68 Citations (Scopus)

Abstract

Blue (494 nm) light emitting quantum well diodes based on Zn(S,Se) p-n junctions are demonstrated at room temperature. P-type Zn(S,Se) is realized by using a nitrogen rf plasma cell. The light emitting diode is formed on homoepitaxial GaAs buffer layers by molecular beam epitaxy. The S fraction of the alloy is selected to provide a lattice match between the II-VI active region and the GaAs buffer; the result is an active region having a dislocation density below 10⁵/cm^-2. The letter discusses emission characteristics as well as the x-ray rocking curve and transmission electron microscopy characterization of the structures.

Original language	English
Pages (from-to)	1999-2001
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	16
DOIs	https://doi.org/10.1063/1.107123
Publication status	Published - 1992 Dec 1

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Xie, W., Grillo, D. C., Gunshor, R. L., Kobayashi, M., Jeon, H., Ding, J., Nurmikko, A. V., Hua, G. C., & Otsuka, N. (1992). Room temperature blue light emitting p-n diodes from Zn(S,Se)-based multiple quantum well structures. Applied Physics Letters, 60(16), 1999-2001. https://doi.org/10.1063/1.107123

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abstract = "Blue (494 nm) light emitting quantum well diodes based on Zn(S,Se) p-n junctions are demonstrated at room temperature. P-type Zn(S,Se) is realized by using a nitrogen rf plasma cell. The light emitting diode is formed on homoepitaxial GaAs buffer layers by molecular beam epitaxy. The S fraction of the alloy is selected to provide a lattice match between the II-VI active region and the GaAs buffer; the result is an active region having a dislocation density below 105/cm-2. The letter discusses emission characteristics as well as the x-ray rocking curve and transmission electron microscopy characterization of the structures.",

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AU - Xie, W.

AU - Grillo, D. C.

AU - Gunshor, R. L.

AU - Kobayashi, M.

AU - Jeon, H.

AU - Ding, J.

AU - Nurmikko, A. V.

AU - Hua, G. C.

AU - Otsuka, N.

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N2 - Blue (494 nm) light emitting quantum well diodes based on Zn(S,Se) p-n junctions are demonstrated at room temperature. P-type Zn(S,Se) is realized by using a nitrogen rf plasma cell. The light emitting diode is formed on homoepitaxial GaAs buffer layers by molecular beam epitaxy. The S fraction of the alloy is selected to provide a lattice match between the II-VI active region and the GaAs buffer; the result is an active region having a dislocation density below 105/cm-2. The letter discusses emission characteristics as well as the x-ray rocking curve and transmission electron microscopy characterization of the structures.

AB - Blue (494 nm) light emitting quantum well diodes based on Zn(S,Se) p-n junctions are demonstrated at room temperature. P-type Zn(S,Se) is realized by using a nitrogen rf plasma cell. The light emitting diode is formed on homoepitaxial GaAs buffer layers by molecular beam epitaxy. The S fraction of the alloy is selected to provide a lattice match between the II-VI active region and the GaAs buffer; the result is an active region having a dislocation density below 105/cm-2. The letter discusses emission characteristics as well as the x-ray rocking curve and transmission electron microscopy characterization of the structures.

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10.1063/1.107123