Room temperature blue light emitting p-n diodes from Zn(S,Se)-based multiple quantum well structures

W. Xie; D. C. Grillo; R. L. Gunshor; M. Kobayashi; H. Jeon; J. Ding; A. V. Nurmikko; G. C. Hua; N. Otsuka

doi:10.1063/1.107123

Room temperature blue light emitting p-n diodes from Zn(S,Se)-based multiple quantum well structures

W. Xie, D. C. Grillo, R. L. Gunshor, M. Kobayashi, H. Jeon, J. Ding, A. V. Nurmikko, G. C. Hua, N. Otsuka

Research output: Contribution to journal › Article › peer-review

68 Citations (Scopus)

Abstract

Blue (494 nm) light emitting quantum well diodes based on Zn(S,Se) p-n junctions are demonstrated at room temperature. P-type Zn(S,Se) is realized by using a nitrogen rf plasma cell. The light emitting diode is formed on homoepitaxial GaAs buffer layers by molecular beam epitaxy. The S fraction of the alloy is selected to provide a lattice match between the II-VI active region and the GaAs buffer; the result is an active region having a dislocation density below 10⁵/cm^-2. The letter discusses emission characteristics as well as the x-ray rocking curve and transmission electron microscopy characterization of the structures.

Original language	English
Pages (from-to)	1999-2001
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	16
DOIs	https://doi.org/10.1063/1.107123
Publication status	Published - 1992 Dec 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.107123

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title = "Room temperature blue light emitting p-n diodes from Zn(S,Se)-based multiple quantum well structures",

abstract = "Blue (494 nm) light emitting quantum well diodes based on Zn(S,Se) p-n junctions are demonstrated at room temperature. P-type Zn(S,Se) is realized by using a nitrogen rf plasma cell. The light emitting diode is formed on homoepitaxial GaAs buffer layers by molecular beam epitaxy. The S fraction of the alloy is selected to provide a lattice match between the II-VI active region and the GaAs buffer; the result is an active region having a dislocation density below 105/cm-2. The letter discusses emission characteristics as well as the x-ray rocking curve and transmission electron microscopy characterization of the structures.",

author = "W. Xie and Grillo, {D. C.} and Gunshor, {R. L.} and M. Kobayashi and H. Jeon and J. Ding and Nurmikko, {A. V.} and Hua, {G. C.} and N. Otsuka",

year = "1992",

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T1 - Room temperature blue light emitting p-n diodes from Zn(S,Se)-based multiple quantum well structures

AU - Xie, W.

AU - Grillo, D. C.

AU - Gunshor, R. L.

AU - Kobayashi, M.

AU - Jeon, H.

AU - Ding, J.

AU - Nurmikko, A. V.

AU - Hua, G. C.

AU - Otsuka, N.

PY - 1992/12/1

Y1 - 1992/12/1

N2 - Blue (494 nm) light emitting quantum well diodes based on Zn(S,Se) p-n junctions are demonstrated at room temperature. P-type Zn(S,Se) is realized by using a nitrogen rf plasma cell. The light emitting diode is formed on homoepitaxial GaAs buffer layers by molecular beam epitaxy. The S fraction of the alloy is selected to provide a lattice match between the II-VI active region and the GaAs buffer; the result is an active region having a dislocation density below 105/cm-2. The letter discusses emission characteristics as well as the x-ray rocking curve and transmission electron microscopy characterization of the structures.

AB - Blue (494 nm) light emitting quantum well diodes based on Zn(S,Se) p-n junctions are demonstrated at room temperature. P-type Zn(S,Se) is realized by using a nitrogen rf plasma cell. The light emitting diode is formed on homoepitaxial GaAs buffer layers by molecular beam epitaxy. The S fraction of the alloy is selected to provide a lattice match between the II-VI active region and the GaAs buffer; the result is an active region having a dislocation density below 105/cm-2. The letter discusses emission characteristics as well as the x-ray rocking curve and transmission electron microscopy characterization of the structures.

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