Room temperature blue light emitting p-n diodes from Zn(S,Se)-based multiple quantum well structures

W. Xie, D. C. Grillo, R. L. Gunshor, M. Kobayashi, H. Jeon, J. Ding, A. V. Nurmikko, G. C. Hua, N. Otsuka

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Abstract

Blue (494 nm) light emitting quantum well diodes based on Zn(S,Se) p-n junctions are demonstrated at room temperature. P-type Zn(S,Se) is realized by using a nitrogen rf plasma cell. The light emitting diode is formed on homoepitaxial GaAs buffer layers by molecular beam epitaxy. The S fraction of the alloy is selected to provide a lattice match between the II-VI active region and the GaAs buffer; the result is an active region having a dislocation density below 105/cm-2. The letter discusses emission characteristics as well as the x-ray rocking curve and transmission electron microscopy characterization of the structures.

Original languageEnglish
Pages (from-to)1999-2001
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number16
DOIs
Publication statusPublished - 1992 Dec 1

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Xie, W., Grillo, D. C., Gunshor, R. L., Kobayashi, M., Jeon, H., Ding, J., Nurmikko, A. V., Hua, G. C., & Otsuka, N. (1992). Room temperature blue light emitting p-n diodes from Zn(S,Se)-based multiple quantum well structures. Applied Physics Letters, 60(16), 1999-2001. https://doi.org/10.1063/1.107123