ROOM TEMPERATURE C. W. OPERATION OF InGaAsP/InP HETEROSTRUCTURE LASERS EMITTING AT 1. 56 mu m.

S. Akiba; K. Sakai; Yuichi Matsushima; T. Yamamoto

ROOM TEMPERATURE C. W. OPERATION OF InGaAsP/InP HETEROSTRUCTURE LASERS EMITTING AT 1. 56 mu m.

S. Akiba^*, K. Sakai, Yuichi Matsushima, T. Yamamoto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

Room-temperature cw operation of InGaAsP/InP heterostructure lasers grown by liquid-phase epitaxy was achieved at 1. 56 mu m. An active InGaAsP layer was essentially sandwiched by InP, though a thin InGaAsP buffer layer was deposited to prevent the melt-back of the active layer. Threshold current was typically 300 ma for a 17 mu m wide oxide-defined stripe laser.

Original language	English
Pages (from-to)	606-607
Number of pages	2
Journal	Electronics Letters
Volume	15
Issue number	19
Publication status	Published - 1979 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "ROOM TEMPERATURE C. W. OPERATION OF InGaAsP/InP HETEROSTRUCTURE LASERS EMITTING AT 1. 56 mu m.",

abstract = "Room-temperature cw operation of InGaAsP/InP heterostructure lasers grown by liquid-phase epitaxy was achieved at 1. 56 mu m. An active InGaAsP layer was essentially sandwiched by InP, though a thin InGaAsP buffer layer was deposited to prevent the melt-back of the active layer. Threshold current was typically 300 ma for a 17 mu m wide oxide-defined stripe laser.",

author = "S. Akiba and K. Sakai and Yuichi Matsushima and T. Yamamoto",

year = "1979",

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AU - Akiba, S.

AU - Sakai, K.

AU - Matsushima, Yuichi

AU - Yamamoto, T.

PY - 1979/1/1

Y1 - 1979/1/1

N2 - Room-temperature cw operation of InGaAsP/InP heterostructure lasers grown by liquid-phase epitaxy was achieved at 1. 56 mu m. An active InGaAsP layer was essentially sandwiched by InP, though a thin InGaAsP buffer layer was deposited to prevent the melt-back of the active layer. Threshold current was typically 300 ma for a 17 mu m wide oxide-defined stripe laser.

AB - Room-temperature cw operation of InGaAsP/InP heterostructure lasers grown by liquid-phase epitaxy was achieved at 1. 56 mu m. An active InGaAsP layer was essentially sandwiched by InP, though a thin InGaAsP buffer layer was deposited to prevent the melt-back of the active layer. Threshold current was typically 300 ma for a 17 mu m wide oxide-defined stripe laser.

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ROOM TEMPERATURE C. W. OPERATION OF InGaAsP/InP HETEROSTRUCTURE LASERS EMITTING AT 1. 56 mu m.

Abstract

ASJC Scopus subject areas

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