ROOM TEMPERATURE C. W. OPERATION OF InGaAsP/InP HETEROSTRUCTURE LASERS EMITTING AT 1. 56 mu m.

S. Akiba, K. Sakai, Yuichi Matsushima, T. Yamamoto

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

Room-temperature cw operation of InGaAsP/InP heterostructure lasers grown by liquid-phase epitaxy was achieved at 1. 56 mu m. An active InGaAsP layer was essentially sandwiched by InP, though a thin InGaAsP buffer layer was deposited to prevent the melt-back of the active layer. Threshold current was typically 300 ma for a 17 mu m wide oxide-defined stripe laser.

Original languageEnglish
Pages (from-to)606-607
Number of pages2
JournalElectronics Letters
Volume15
Issue number19
Publication statusPublished - 1979 Jan 1
Externally publishedYes

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Heterojunctions
Liquid phase epitaxy
Lasers
Buffer layers
Temperature
Oxides

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Akiba, S., Sakai, K., Matsushima, Y., & Yamamoto, T. (1979). ROOM TEMPERATURE C. W. OPERATION OF InGaAsP/InP HETEROSTRUCTURE LASERS EMITTING AT 1. 56 mu m. Electronics Letters, 15(19), 606-607.

ROOM TEMPERATURE C. W. OPERATION OF InGaAsP/InP HETEROSTRUCTURE LASERS EMITTING AT 1. 56 mu m. / Akiba, S.; Sakai, K.; Matsushima, Yuichi; Yamamoto, T.

In: Electronics Letters, Vol. 15, No. 19, 01.01.1979, p. 606-607.

Research output: Contribution to journalArticle

Akiba, S, Sakai, K, Matsushima, Y & Yamamoto, T 1979, 'ROOM TEMPERATURE C. W. OPERATION OF InGaAsP/InP HETEROSTRUCTURE LASERS EMITTING AT 1. 56 mu m.', Electronics Letters, vol. 15, no. 19, pp. 606-607.
Akiba, S. ; Sakai, K. ; Matsushima, Yuichi ; Yamamoto, T. / ROOM TEMPERATURE C. W. OPERATION OF InGaAsP/InP HETEROSTRUCTURE LASERS EMITTING AT 1. 56 mu m. In: Electronics Letters. 1979 ; Vol. 15, No. 19. pp. 606-607.
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