Room temperature CW operation of distributed-feedback buried-heterostructure InGaAsP/lnP lasers emitting at 1·57 μm was achieved. A DC threshold of about 250 mA at 25°C and a temperature coefficient of the lasing wavelength of 10 A/°C were obtained. Some of these lasers manifested single longitudinal mode operation both in DC condition and in deeply modulated condition at 500 Mbit/s.
- Lasers and applications
- Semiconductor lasers
ASJC Scopus subject areas
- Electrical and Electronic Engineering