Room-temperature CW operation of distributed-feedback buried-heterostructure InGaAsP/InP lasers emitting at 1.57 μm

K. Utaka, S. Akiba, K. Sakai, Y. Matsushima

Research output: Contribution to journalArticle

89 Citations (Scopus)

Abstract

Room temperature CW operation of distributed-feedback buried-heterostructure InGaAsP/lnP lasers emitting at 1·57 μm was achieved. A DC threshold of about 250 mA at 25°C and a temperature coefficient of the lasing wavelength of 10 A/°C were obtained. Some of these lasers manifested single longitudinal mode operation both in DC condition and in deeply modulated condition at 500 Mbit/s.

Original languageEnglish
Pages (from-to)961-963
Number of pages3
JournalElectronics Letters
Volume17
DOIs
Publication statusPublished - 1981 Dec 10
Externally publishedYes

Keywords

  • Lasers and applications
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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