Room-temperature CW operation of distributed-feedback buried-heterostructure InGaAsP/InP lasers emitting at 1.57 μm

K. Utaka; S. Akiba; K. Sakai; Y. Matsushima

doi:10.1049/el:19810672

Room-temperature CW operation of distributed-feedback buried-heterostructure InGaAsP/InP lasers emitting at 1.57 μm

K. Utaka, S. Akiba, K. Sakai, Y. Matsushima

Research output: Contribution to journal › Article › peer-review

94 Citations (Scopus)

Abstract

Room temperature CW operation of distributed-feedback buried-heterostructure InGaAsP/lnP lasers emitting at 1·57 μm was achieved. A DC threshold of about 250 mA at 25°C and a temperature coefficient of the lasing wavelength of 10 A/°C were obtained. Some of these lasers manifested single longitudinal mode operation both in DC condition and in deeply modulated condition at 500 Mbit/s.

Original language	English
Pages (from-to)	961-963
Number of pages	3
Journal	Electronics Letters
Volume	17
DOIs	https://doi.org/10.1049/el:19810672
Publication status	Published - 1981 Dec 10
Externally published	Yes

Keywords

Lasers and applications
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19810672

Cite this

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title = "Room-temperature CW operation of distributed-feedback buried-heterostructure InGaAsP/InP lasers emitting at 1.57 μm",

abstract = "Room temperature CW operation of distributed-feedback buried-heterostructure InGaAsP/lnP lasers emitting at 1·57 μm was achieved. A DC threshold of about 250 mA at 25°C and a temperature coefficient of the lasing wavelength of 10 A/°C were obtained. Some of these lasers manifested single longitudinal mode operation both in DC condition and in deeply modulated condition at 500 Mbit/s.",

keywords = "Lasers and applications, Semiconductor lasers",

author = "K. Utaka and S. Akiba and K. Sakai and Y. Matsushima",

year = "1981",

month = dec,

day = "10",

doi = "10.1049/el:19810672",

language = "English",

volume = "17",

pages = "961--963",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

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T1 - Room-temperature CW operation of distributed-feedback buried-heterostructure InGaAsP/InP lasers emitting at 1.57 μm

AU - Utaka, K.

AU - Akiba, S.

AU - Sakai, K.

AU - Matsushima, Y.

PY - 1981/12/10

Y1 - 1981/12/10

N2 - Room temperature CW operation of distributed-feedback buried-heterostructure InGaAsP/lnP lasers emitting at 1·57 μm was achieved. A DC threshold of about 250 mA at 25°C and a temperature coefficient of the lasing wavelength of 10 A/°C were obtained. Some of these lasers manifested single longitudinal mode operation both in DC condition and in deeply modulated condition at 500 Mbit/s.

AB - Room temperature CW operation of distributed-feedback buried-heterostructure InGaAsP/lnP lasers emitting at 1·57 μm was achieved. A DC threshold of about 250 mA at 25°C and a temperature coefficient of the lasing wavelength of 10 A/°C were obtained. Some of these lasers manifested single longitudinal mode operation both in DC condition and in deeply modulated condition at 500 Mbit/s.

KW - Lasers and applications

KW - Semiconductor lasers

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UR - http://www.scopus.com/inward/citedby.url?scp=0019675687&partnerID=8YFLogxK

U2 - 10.1049/el:19810672

DO - 10.1049/el:19810672

M3 - Article

AN - SCOPUS:0019675687

SN - 0013-5194

VL - 17

SP - 961

EP - 963

JO - Electronics Letters

JF - Electronics Letters

ER -

Room-temperature CW operation of distributed-feedback buried-heterostructure InGaAsP/InP lasers emitting at 1.57 μm

Abstract

Keywords

ASJC Scopus subject areas

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