ROOM-TEMPERATURE CW OPERATION OF MBE-GROWN GaInAs/AlInAs MQW LASERS IN 1. 5 mu M RANGE.

Yuichi Matsushima, Katsuyuki Utaka, K. Sakai, O. Takeuchi

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We report successful room-temperature CW operation of GaInAs/AlInAs multiquantum-well (MQW) injection lasers fabricated by molecular beam epitaxy. The emitting wavelength and threshold current were 1. 57 mu m and 530 ma, respectively, for an SiN-defined stripe lase with a 12 mu m-wide, 600 mu m-long cavity.

Original languageEnglish
Pages (from-to)1271-1273
Number of pages3
JournalElectronics Letters
Volume23
Issue number24
Publication statusPublished - 1987 Jan 1
Externally publishedYes

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Injection lasers
Molecular beam epitaxy
Wavelength
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

ROOM-TEMPERATURE CW OPERATION OF MBE-GROWN GaInAs/AlInAs MQW LASERS IN 1. 5 mu M RANGE. / Matsushima, Yuichi; Utaka, Katsuyuki; Sakai, K.; Takeuchi, O.

In: Electronics Letters, Vol. 23, No. 24, 01.01.1987, p. 1271-1273.

Research output: Contribution to journalArticle

Matsushima, Y, Utaka, K, Sakai, K & Takeuchi, O 1987, 'ROOM-TEMPERATURE CW OPERATION OF MBE-GROWN GaInAs/AlInAs MQW LASERS IN 1. 5 mu M RANGE.', Electronics Letters, vol. 23, no. 24, pp. 1271-1273.
Matsushima, Yuichi ; Utaka, Katsuyuki ; Sakai, K. ; Takeuchi, O. / ROOM-TEMPERATURE CW OPERATION OF MBE-GROWN GaInAs/AlInAs MQW LASERS IN 1. 5 mu M RANGE. In: Electronics Letters. 1987 ; Vol. 23, No. 24. pp. 1271-1273.
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