ROOM-TEMPERATURE CW OPERATION OF MBE-GROWN GaInAs/AlInAs MQW LASERS IN 1. 5 mu M RANGE.

Yuichi Matsushima, Katsuyuki Utaka, K. Sakai, O. Takeuchi

Research output: Contribution to journalArticle

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Abstract

We report successful room-temperature CW operation of GaInAs/AlInAs multiquantum-well (MQW) injection lasers fabricated by molecular beam epitaxy. The emitting wavelength and threshold current were 1. 57 mu m and 530 ma, respectively, for an SiN-defined stripe lase with a 12 mu m-wide, 600 mu m-long cavity.

Original languageEnglish
Pages (from-to)1271-1273
Number of pages3
JournalElectronics Letters
Volume23
Issue number24
Publication statusPublished - 1987 Jan 1
Externally publishedYes

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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