We report successful room-temperature CW operation of GaInAs/AlInAs multiquantum-well (MQW) injection lasers fabricated by molecular beam epitaxy. The emitting wavelength and threshold current were 1. 57 mu m and 530 ma, respectively, for an SiN-defined stripe lase with a 12 mu m-wide, 600 mu m-long cavity.
|Number of pages||3|
|Publication status||Published - 1987 Jan 1|
ASJC Scopus subject areas
- Electrical and Electronic Engineering