Room temperature GaN bonding by surface activated bonding methods

Fengwen Mu, Tadatomo Suga

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, both GaN-Si and GaN-diamond bonding at room temperature were achieved by surface activated bonding (SAB) methods. In the GaN-Si bonding by standard SAB, the results of Ga-face to Si bonding are better than that of N-face to Si bonding such as higher bonding energy. Both of the structure and composition of the two kinds of GaN-Si interfaces were investigated to understand the bonding mechanisms. In the GaN-diamond bonding by modified SAB using an intermediate Si nano-layer, a uniformly seamless bonding interface was achieved. The GaN-diamond bonded structure is expected to be helpful for the applications of high-power GaN devices.

Original languageEnglish
Title of host publicationProceedings - 2018 19th International Conference on Electronic Packaging Technology, ICEPT 2018
EditorsFei Xiao, Jun Wang, Lin Chen, Tianchun Ye
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages521-524
Number of pages4
ISBN (Electronic)9781538663868
DOIs
Publication statusPublished - 2018 Oct 2
Externally publishedYes
Event19th International Conference on Electronic Packaging Technology, ICEPT 2018 - Shanghai, China
Duration: 2018 Aug 82018 Aug 11

Publication series

NameProceedings - 2018 19th International Conference on Electronic Packaging Technology, ICEPT 2018

Conference

Conference19th International Conference on Electronic Packaging Technology, ICEPT 2018
CountryChina
CityShanghai
Period18/8/818/8/11

Keywords

  • bonding
  • GaN
  • interface
  • room temperature
  • SAB

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys
  • Polymers and Plastics

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  • Cite this

    Mu, F., & Suga, T. (2018). Room temperature GaN bonding by surface activated bonding methods. In F. Xiao, J. Wang, L. Chen, & T. Ye (Eds.), Proceedings - 2018 19th International Conference on Electronic Packaging Technology, ICEPT 2018 (pp. 521-524). [8480574] (Proceedings - 2018 19th International Conference on Electronic Packaging Technology, ICEPT 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEPT.2018.8480574