Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices

Fengwen Mu, Ran He, Tadatomo Suga

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Fabrication of GaN-on-diamond structure by bonding technology is becoming more and more attractive for high-power GaN devices. However, researches on low temperature bonding between GaN and diamond is still not well developed. This work accomplished a GaN-diamond bonding at room temperature by a modified surface-activated-bonding (SAB) method for the first time. The microstructure and composition of the bonding interface were analyzed by using scanning transmission electron microscope (STEM) and energy-dispersive X-ray spectroscopy (EDX). The results show that the interface is uniformly bonded without any nano-voids and is considered to be suitable for the fabrication of GaN-on-diamond structure.

Original languageEnglish
Pages (from-to)148-151
Number of pages4
JournalScripta Materialia
Volume150
DOIs
Publication statusPublished - 2018 Jun 1
Externally publishedYes

Fingerprint

Diamond
Diamonds
diamonds
room temperature
Temperature
Fabrication
fabrication
voids
Electron microscopes
electron microscopes
electron energy
Scanning
microstructure
Microstructure
scanning
Chemical analysis
spectroscopy
x rays

Keywords

  • Bonding
  • GaN-on-diamond
  • High power devices
  • Interface
  • Room temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices. / Mu, Fengwen; He, Ran; Suga, Tadatomo.

In: Scripta Materialia, Vol. 150, 01.06.2018, p. 148-151.

Research output: Contribution to journalArticle

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