Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices

Fengwen Mu*, Ran He, Tadatomo Suga

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

66 Citations (Scopus)


Fabrication of GaN-on-diamond structure by bonding technology is becoming more and more attractive for high-power GaN devices. However, researches on low temperature bonding between GaN and diamond is still not well developed. This work accomplished a GaN-diamond bonding at room temperature by a modified surface-activated-bonding (SAB) method for the first time. The microstructure and composition of the bonding interface were analyzed by using scanning transmission electron microscope (STEM) and energy-dispersive X-ray spectroscopy (EDX). The results show that the interface is uniformly bonded without any nano-voids and is considered to be suitable for the fabrication of GaN-on-diamond structure.

Original languageEnglish
Pages (from-to)148-151
Number of pages4
JournalScripta Materialia
Publication statusPublished - 2018 Jun 1
Externally publishedYes


  • Bonding
  • GaN-on-diamond
  • High power devices
  • Interface
  • Room temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics


Dive into the research topics of 'Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices'. Together they form a unique fingerprint.

Cite this