Room-temperature random telegraph noise in luminescence from macroscopic InGaN clusters

Takao Aoki, Yukie Nishikawa, Makoto Kuwata-Gonokami

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We report on photoluminescence properties of individual macroscopically sized InGaN clusters that were formed in InGaN multiple quantum wells. Phase separation in InGaN results in the formation of clusters with a size of 1-2 μm with three different indium compositions. A small fraction (one in 100-1000) of the clusters shows random telegraph noise in luminescence at room temperature. Superlinear dependence of the luminescence switching rate on excitation intensity indicates that the switching is induced by the cooperation of multiple carriers.

Original languageEnglish
Pages (from-to)1065-1067
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number8
DOIs
Publication statusPublished - 2001 Feb 19
Externally publishedYes

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luminescence
room temperature
indium
quantum wells
photoluminescence
excitation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Room-temperature random telegraph noise in luminescence from macroscopic InGaN clusters. / Aoki, Takao; Nishikawa, Yukie; Kuwata-Gonokami, Makoto.

In: Applied Physics Letters, Vol. 78, No. 8, 19.02.2001, p. 1065-1067.

Research output: Contribution to journalArticle

Aoki, Takao ; Nishikawa, Yukie ; Kuwata-Gonokami, Makoto. / Room-temperature random telegraph noise in luminescence from macroscopic InGaN clusters. In: Applied Physics Letters. 2001 ; Vol. 78, No. 8. pp. 1065-1067.
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