Room temperature resonant photocurrent in an erbium low-doped silicon transistor at telecom wavelength

Michele Celebrano, Lavinia Ghirardini, Marco Finazzi, Giorgio Ferrari, Yuki Chiba, Ayman Abdelghafar, Maasa Yano, Takahiro Shinada, Takashi Tanii, Enrico Prati

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

An erbium-doped silicon transistor prepared by ion implantation and co-doped with oxygen is investigated by photocurrent generation in the telecommunication range. The photocurrent is explored at room temperature as a function of the wavelength by using a supercontinuum laser source working in the µW range. The 1-µm 2 transistor is tuned to involve in the transport only those electrons lying in the Er-O states. The spectrally resolved photocurrent is characterized by the typical absorption line of erbium and the linear dependence of the signal over the impinging power demonstrates that the Er-doped transistor is operating far from saturation. The relatively small number of estimated photoexcited atoms (≈4 × 10 4 ) makes Er-dpoed silicon potentially suitable for designing resonance-based frequency selective single photon detectors at 1550 nm.

Original languageEnglish
Article number416
JournalNanomaterials
Volume9
Issue number3
DOIs
Publication statusPublished - 2019 Mar 1

Fingerprint

Erbium
Silicon
Photocurrents
Transistors
Wavelength
Ion implantation
Temperature
Telecommunication
Photons
Oxygen
Detectors
Atoms
Electrons
Lasers

Keywords

  • Erbium
  • Photocurrent
  • Silicon transistor

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)

Cite this

Celebrano, M., Ghirardini, L., Finazzi, M., Ferrari, G., Chiba, Y., Abdelghafar, A., ... Prati, E. (2019). Room temperature resonant photocurrent in an erbium low-doped silicon transistor at telecom wavelength. Nanomaterials, 9(3), [416]. https://doi.org/10.3390/nano9030416

Room temperature resonant photocurrent in an erbium low-doped silicon transistor at telecom wavelength. / Celebrano, Michele; Ghirardini, Lavinia; Finazzi, Marco; Ferrari, Giorgio; Chiba, Yuki; Abdelghafar, Ayman; Yano, Maasa; Shinada, Takahiro; Tanii, Takashi; Prati, Enrico.

In: Nanomaterials, Vol. 9, No. 3, 416, 01.03.2019.

Research output: Contribution to journalArticle

Celebrano, M, Ghirardini, L, Finazzi, M, Ferrari, G, Chiba, Y, Abdelghafar, A, Yano, M, Shinada, T, Tanii, T & Prati, E 2019, 'Room temperature resonant photocurrent in an erbium low-doped silicon transistor at telecom wavelength', Nanomaterials, vol. 9, no. 3, 416. https://doi.org/10.3390/nano9030416
Celebrano M, Ghirardini L, Finazzi M, Ferrari G, Chiba Y, Abdelghafar A et al. Room temperature resonant photocurrent in an erbium low-doped silicon transistor at telecom wavelength. Nanomaterials. 2019 Mar 1;9(3). 416. https://doi.org/10.3390/nano9030416
Celebrano, Michele ; Ghirardini, Lavinia ; Finazzi, Marco ; Ferrari, Giorgio ; Chiba, Yuki ; Abdelghafar, Ayman ; Yano, Maasa ; Shinada, Takahiro ; Tanii, Takashi ; Prati, Enrico. / Room temperature resonant photocurrent in an erbium low-doped silicon transistor at telecom wavelength. In: Nanomaterials. 2019 ; Vol. 9, No. 3.
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