Room temperature resonant photocurrent in an erbium low-doped silicon transistor at telecom wavelength

Michele Celebrano, Lavinia Ghirardini, Marco Finazzi, Giorgio Ferrari, Yuki Chiba, Ayman Abdelghafar, Maasa Yano, Takahiro Shinada, Takashi Tanii, Enrico Prati

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2 Citations (Scopus)

Abstract

An erbium-doped silicon transistor prepared by ion implantation and co-doped with oxygen is investigated by photocurrent generation in the telecommunication range. The photocurrent is explored at room temperature as a function of the wavelength by using a supercontinuum laser source working in the µW range. The 1-µm 2 transistor is tuned to involve in the transport only those electrons lying in the Er-O states. The spectrally resolved photocurrent is characterized by the typical absorption line of erbium and the linear dependence of the signal over the impinging power demonstrates that the Er-doped transistor is operating far from saturation. The relatively small number of estimated photoexcited atoms (≈4 × 10 4 ) makes Er-dpoed silicon potentially suitable for designing resonance-based frequency selective single photon detectors at 1550 nm.

Original languageEnglish
Article number416
JournalNanomaterials
Volume9
Issue number3
DOIs
Publication statusPublished - 2019 Mar 1

Keywords

  • Erbium
  • Photocurrent
  • Silicon transistor

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)

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    Celebrano, M., Ghirardini, L., Finazzi, M., Ferrari, G., Chiba, Y., Abdelghafar, A., Yano, M., Shinada, T., Tanii, T., & Prati, E. (2019). Room temperature resonant photocurrent in an erbium low-doped silicon transistor at telecom wavelength. Nanomaterials, 9(3), [416]. https://doi.org/10.3390/nano9030416