Room temperature SiC-SiC direct wafer bonding by SAB methods

Fengwen Mu, Kenichi Iguchi, Haruo Nakazawa, Yoshikazu Takahashi, Masahisa Fujino, Tadatomo Suga

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Room temperature direct wafer bonding of SiC-SiC by standard surface-activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam were compared in terms of bonding energy, interface structure and composition. Compared with that obtained by standard SAB, the bonding interface obtained by modified SAB with a Si-containing Ar ion beam is >30% stronger, which should be due to the in situ Si compensation during surface activation by the Si-containing Ar ion beam.

Original languageEnglish
Title of host publicationProceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages1
ISBN (Electronic)9784904743034
DOIs
Publication statusPublished - 2017 Jun 13
Externally publishedYes
Event5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 - Tokyo, Japan
Duration: 2017 May 162017 May 18

Publication series

NameProceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017

Other

Other5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
CountryJapan
CityTokyo
Period17/5/1617/5/18

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

Cite this

Mu, F., Iguchi, K., Nakazawa, H., Takahashi, Y., Fujino, M., & Suga, T. (2017). Room temperature SiC-SiC direct wafer bonding by SAB methods. In Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 [7947399] (Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/LTB-3D.2017.7947399